Dual MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds N Channel | Drain Source Voltage Vds P Channel | Continuous Drain Current Id N Channel | Continuous Drain Current Id P Channel | Drain Source On State Resistance N Channel | Drain Source On State Resistance P Channel | Transistor Case Style | No. of Pins | Power Dissipation N Channel | Power Dissipation P Channel | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC6333C..
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SC16694 |
SMD Complementary N and P Channel Dual MOSFET Transistor, SuperSOT, 30V, 2.5A ONSEMI The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation ...
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Complementary N and P Channel | 30V | 30V | 2.5A | 2.5A | 0.095ohm | 0.095ohm | SuperSOT | 6Pins | 960mW | 960mW | 150°C | -888 | -888 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDD8424H
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SC16682 |
SMD Dual N & P Channel Mosfet Transistor, TO-252, 40V, 9A ONSEMI The FDD8424H is a 40V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized p...
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Complementary N and P Channel | 40V | 40V | 9A | 9A | 0.019ohm | 0.019ohm | TO-252 (DPAK) | 5Pins | 3.1W | 35W | 150°C | -888 | -888 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7342TRPBF
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SC16807 |
Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD INFINEON The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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P Channel | 55V | 55V | 3.4A | 3.4A | 0.095ohm | 0.095ohm | SOIC | 8Pins | 2W | 2W | 150°C | -888 | -888 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138PS,115
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SC15997 |
Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD NEXPERIA The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...
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N Channel | 60V | -888V | 320mA | -888A | 0.9ohm | -888ohm | SOT-363 | 6Pins | 420mW | -888W | 150°C | -888 | -888 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138BKS,115
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SC16799 |
Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount NEXPERIA The BSS138BKS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compat...
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N Channel | 60V | 60V | 320mA | 320mA | 1ohm | 1ohm | SOT-363 | 6Pins | 280mW | 280mW | 150°C | -888 | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG6602SVT
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SC16690 |
SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26 DIODES INC. The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and m...
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Complementary N and P Channel | 30V | 30V | 3.4A | 3.4A | 0.038ohm | 0.038ohm | TSOT-26 | 6Pins | 1.12W | 1.12W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG6601LVT-7
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SC16804 |
Dual MOSFET, Complementary N and P Channel, 30V, 3.8A, 0.034 Ohm, TSOT-26, SMD DIODES INC. This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Complementary MOSFET • Low On-Resistance • Low Input Capacitance • Fast ...
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Complementary N and P Channel | 30V | 30V | 3.8A | 3.8A | 0.034ohm | 0.034ohm | TSOT-26 | 6Pins | 850mW | 850mW | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI9945BDY-T1-GE3
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SC16801 |
Dual MOSFET, N Channel, 60V, 5.3A, 0.046 Ohm, SOIC, SMD VISHAY The SI9945BDY-T1-GE3 is a 60V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in LCD TV CCFL inverter and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...
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N Channel | 60V | - | 5.3A | - | 0.046ohm | - | SOIC | 8Pins | 3.1W | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7313TRPBF
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SC16809 |
Dual MOSFET, N Channel, 30V, 6.5A, 0.023 Ohm, SOIC, SMD INFINEON The IRF7313TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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N Channel | 30V | 30V | 6.5A | 6.5A | 0.023ohm | 0.023ohm | SOIC | 8Pins | 2W | 2W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7103TRPBF
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SC16693 |
SMD Dual N Channel MOSFET Transistor, SOIC, 50V, 3A INFINEON The IRF7103TRPBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of ...
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N Channel | 50V | 50V | 3A | 3A | 0.11ohm | 0.11ohm | SOIC | 8Pins | 2W | 2W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138DW-7-F
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SC15998 |
Dual MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-363, SMD DIODES INC. The BSS138DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for load switch applications. • Low ON-resistance • Low gate threshold volt...
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N Channel | 50V | -888V | 200mA | -888A | 3.5ohm | -888ohm | SOT-363 | 6Pins | 200mW | -888W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7319TRPBF
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SC16802 |
Dual MOSFET, Complementary N and P Channel, 30V, 6.5A, 0.023 Ohm, SOIC, Surface Mount INFINEON • Generation V Technology • Ultra low On-Resistance
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Complementary N and P Channel | 30V | 30V | 6.5A | 6.5A | 0.023ohm | 0.023ohm | SOIC | 8Pins | 2W | 2W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTZD3154NT1G
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SC16697 |
SMD Dual MOSFET N Channel Transistor, SOT-563, 20V, 540mA ONSEMI The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications. • Low RDS (ON) improving s...
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N Channel | 20V | 20V | 540mA | 540mA | 0.4ohm | 0.4ohm | SOT-563 | 6Pins | 250mW | 250mW | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4925DDY-T1-GE3
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SC16688 |
SMD Dual MOSFET P Channel Transistor, SOIC, 30V, 8A VISHAY The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages whic...
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P Channel | - | 30V | - | 8A | - | 0.024ohm | SOIC | 8Pins | - | 5W | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMC2400UV-7
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SC16695 |
SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A DIODES INC. This new generation MOSFET has been designed to minimize the on-state resistance ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low On-Resistance • Low gate threshold voltage • Low in...
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Complementary N and P Channel | 20V | 20V | 1.03A | 1.03A | 0.3ohm | 0.3ohm | SOT-563 | 6Pins | 450mW | 450mW | 150°C | -888 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84DW-7-F
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SC16803 |
Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD DIODES INC. The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...
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P Channel | -888V | 50V | -888A | 130mA | -888ohm | 10ohm | SOT-363 | 6Pins | -888W | 300mW | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4946BEY-T1-E3
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SC16800 |
Dual MOSFET, N Channel, 60V, 6.5A, 0.033 Ohm, SOIC, Surface Mount VISHAY The SI4946BEY-T1-E3 is a 60V Dual N-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power device...
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N Channel | 60V | -888V | 6.5A | -888A | 0.033ohm | -888ohm | SOIC | 8Pins | 2.4W | -888W | 175°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4935BZ
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SC16696 |
SMD Dual MOSFET P Channel Transistor, SOIC, 6.9A, 30V ONSEMI The FDS4935BZ is a 30V Dual P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches...
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P Channel | -888V | 30V | -888A | 6.9A | -888ohm | 0.022ohm | SOIC | 8Pins | -888W | 1.6W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008NBKS,115
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SC16798 |
Dual MOSFET, N Channel, 30V, 350mA, 1 ohm, SOT-363, Surface Mount NEXPERIA The NX3008NBKS is a dual N-channel enhancement mode Field-Effect Transistor (FET) in a surface mounted device (SMD) plastic package using Trench MOSFET technology. Suitable for high-speed line driver and low-side loadswitch. • Very fast switching • Low thr...
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- | - | - | - | - | - | - | SOT-363 | 6Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4559
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SC16692 |
SMD Dual MOSFET PowerTrench Complementary N and P Channel Transistor, 60V, 4.5A ONSEMI The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backligh...
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Complementary N and P Channel | 60V | 60V | 4.5A | 4.5A | 0.055ohm | 0.055ohm | SOIC | 8Pins | 2W | 2W | 175°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS8858CZ
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SC16689 |
SMD Dual MOSFET N and P Channel Transistor, PowerTrench, SOIC, 30V, 8.6A ONSEMI The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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Complementary N and P Channel | 30V | 30V | 8.6A | 8.6A | 0.017ohm | 0.017ohm | SOIC | 8Pins | 2W | 2W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002DW-7-F
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SC15992 |
Dual MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-363, SMD DIODES INC. The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications. • Low ON-resistance • Lo...
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N Channel | 60V | -888V | 115mA | -888A | 13.5ohm | -888ohm | SOT-363 | 6Pins | 200mW | -888W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7343TRPBF
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SC16808 |
Dual MOSFET, Complementary N and P Channel, 55V, 4.7A, 0.043 Ohm, SOIC, SMD INFINEON The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extre...
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Complementary N and P Channel | 55V | 55V | 4.7A | 4.7A | 0.043ohm | 0.043ohm | SOIC | 8Pins | 2W | 2W | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS9926A
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SC16805 |
Dual MOSFET, N Channel, 20V, 6.5A, 0.025 Ohm, SOIC, Surface Mount ONSEMI The FDS9926A is a 20V Dual N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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N Channel | 20V | -888V | 6.5A | -888A | 0.025ohm | -888ohm | SOIC | 8Pins | 2W | -888W | 150°C | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDMQ8205A
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SC16810 |
Dual MOSFET, Complementary N and P Channel, MLP, SMD ONSEMI • Channel Type : Complementary N and P Channel • Transistor Case Style : MLP • No. of Pins : 12Pins • Power Dissipation N Channel : 2.5W • Power Dissipation P Channel : 2.5W • Operating Temperature Max : 150°C • Product Range : GreenBridge 2 Series
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Complementary N and P Channel | - | - | - | - | - | - | MLP | 12Pins | 2.5W | 2.5W | 150°C | GreenBridge 2 Series | - |