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SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26 -
DMG6602SVT
- Manufacturer:
- DIODES INC. DIODES INC.
- Manufacturer Part No:
- DMG6602SVT
- Order Code:
- SC16690
- Product Range
- -
- Technical Datasheet:
- DMG6602SVT Datasheet
Product Overview
- Low input capacitance, low on-resistance
- Fast switching speed, low input/output leakage
- Drain source voltage is 30V at TA = +25°C (P/N channel)
- Continuous drain current is 3.4A at TA = +25°C (P/N channel)
- Drain source on state resistance is 0.038ohm at TA = +25°C (P/N channel)
- Power dissipation is 1.12W at TA = +25°C (P/N channel)
- Gate-source voltage is ±20V at TA = +25°C (P/N channel)
- TSOT26 case
- Operating and storage temperature range from -55 to +150°C
Product Information
- :
- Complementary N and P Channel
- :
- 30V
- :
- 30V
- :
- 3.4A
- :
- 2.8A
- :
- 0.06ohm
- :
- 0.095ohm
- :
- TSOT-26
- :
- 6Pins
- :
- 840mW
- :
- 840mW
- :
- 150°C
- :
- -
- :
- -
- :
- -
Technical Documents (1)
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