Dual MOSFET Transistors

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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds N Channel Drain Source Voltage Vds P Channel Continuous Drain Current Id N Channel Continuous Drain Current Id P Channel Drain Source On State Resistance N Channel Drain Source On State Resistance P Channel Transistor Case Style No. of Pins Power Dissipation N Channel Power Dissipation P Channel Operating Temperature Max Product Range Qualification
 
 
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FDD8424H
FDD8424H - SMD Dual N & P Channel Mosfet Transistor, TO-252, 40V, 9A

SC16682

SMD Dual N & P Channel Mosfet Transistor, TO-252, 40V, 9A

ONSEMI

The FDD8424H is a 40V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized p...

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Complementary N and P Channel 40V 40V 9A 9A 0.019ohm 0.019ohm TO-252 (DPAK) 5Pins 3.1W 35W 150°C - -
NX3008CBKS,115
NX3008CBKS,115 - Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 350 mA, 350 mA, 1 ohm

SC21423

 
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Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 350 mA, 350 mA, 1 ohm

NEXPERIA

The NX3008CBKS is a N/P-channel complementary enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for level shifter, power supply converter, load switch and switching circuit applications. • ...

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Complementary N and P Channel 30V 30V 350mA 350mA 1ohm 1ohm SOT-363 6Pins 280mW 280mW 150°C - -
IRF7341TRPBFXTMA1
IRF7341TRPBFXTMA1 - Dual Mosfet, N-Ch, 55V, 4.7A, SO-8

SC20269

Dual Mosfet, N-Ch, 55V, 4.7A, SO-8

INFINEON

• Channel Type : Dual N Channel • Drain Source Voltage Vds N Channel : 55V • Continuous Drain Current Id N Channel : 4.7A • Drain Source On State Resistance N Channel : 0.043ohm • Transistor Case Style : SO-8 • No. of Pins : 8Pins • Power Dissipation N Channel : 2W • Operating Temperature Max : 150°C • Product Range : HEXFET Series

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Dual N Channel 55V - 4.7A - 0.043ohm - SO-8 8Pins 2W - 150°C HEXFET Series -
BSS8402DW-7-F
BSS8402DW-7-F - Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm

SC21301

 
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Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm

DIODES INC.

The BSS8402DW-7-F is a complementary pair Enhancement Mode MOSFET with matte tin finish annealed over Alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switchi...

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Complementary N and P Channel 60V 60V 115mA 115mA 13.5ohm 13.5ohm SOT-363 6Pins 200mW 200mW 150°C - -
BSS84DW-7-F
BSS84DW-7-F - Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

SC16803

Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

DIODES INC.

The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...

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P Channel - 50V - 130mA - 10ohm SOT-363 6Pins - 300mW 150°C - -