Single MOSFET Transistors

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Transistor Polarity Drain Source Voltage Vds Continuous Drain Current Id On Resistance Rds(on) Transistor Case Style Transistor Mounting Rds(on) Test Voltage Vgs Threshold Voltage Vgs Power Dissipation Pd No. of Pins Operating Temperature Max Product Range Automotive Qualification Standard
 
 
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FDP7030BL
FDP7030BL - Power MOSFET, N Channel, 30 V, 60 A, 0.009 ohm, TO-220, Through Hole

SC11135

Power MOSFET, N Channel, 30 V, 60 A, 0.009 ohm, TO-220, Through Hole

ONSEMI

The FDP7030BL is a 30V N-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power s...

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N Channel 30V 60A 0.009ohm TO-220 Through Hole 10V 1.9V 65W 3Pins 175°C - -
FQP30N06
FQP30N06 - Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

SC16931

Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

ONSEMI

The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...

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N Channel 60V 30A 0.031ohm TO-220AB Through Hole 10V 4V 79W 3Pins 175°C - -
RFP12N10L
RFP12N10L - Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

SC11126

Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

ONSEMI

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...

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N Channel 100V 12A 0.2ohm TO-220AB Through Hole 5V 2V 60W 3Pins 150°C - -
2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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N Channel 60V 200mA 5ohm TO-92 Through Hole 10V 2.1V 400mW 3Pins 150°C - -
IRFZ44NPBF
IRFZ44NPBF - Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

SC08251

Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 55V 41A 0.0175ohm TO-220AB Through Hole 10V 4V 83W 3Pins 175°C - -
BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 500mA 1.2ohm TO-92 Through Hole 10V 2.1V 830mW 3Pins 150°C - -
NTR4101PT1G
NTR4101PT1G - Power MOSFET, P Channel, 20 V, 3.2 A, 0.07 ohm, SOT-23, Surface Mount

SC16827

Power MOSFET, P Channel, 20 V, 3.2 A, 0.07 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications. • -1.8V Rated for...

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P Channel 20V 3.2A 0.07ohm SOT-23 Surface Mount 4.5V 720mV 730mW 3Pins 150°C - -
FDPF10N60NZ
FDPF10N60NZ - N Channel Power MOSFET, 600V, 10A, 0.64 Ohm, TO-220F

SC17011

N Channel Power MOSFET, 600V, 10A, 0.64 Ohm, TO-220F

ONSEMI

• Suitable for LCD/LED/PDP TV, lighting and uninterruptible power supply • RoHS Compliant • Low gate charge (Typ. 23nC) • 100% Avalanche • Improved dv/dt capability • ESD improved capability

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N Channel 600V 10A 0.64ohm TO-220F Through Hole 640mV 5V 38W 3Pins 150°C UniFET Series -
FDV301N
FDV301N - SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA

SC16698

SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA

ONSEMI

The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge...

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N Channel 25V 220mA 3.1ohm SOT-23 Surface Mount 4.5V 850mV 350mW 3Pins 150°C - -
IPT007N06NATMA1
IPT007N06NATMA1 - Power MOSFET, N Channel, 60 V, 300 A, 660 µohm, HSOF, Surface Mount

SC16792

 
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Data Sheet
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RoHS

Power MOSFET, N Channel, 60 V, 300 A, 660 µohm, HSOF, Surface Mount

INFINEON

The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction...

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N Channel 60V 300A 660µohm HSOF Surface Mount 10V 2.8V 375W 8Pins 175°C - -
STP36NF06L
STP36NF06L - Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

SC11127

Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Low on-resistance and rugged avalanche characteristics • N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Used for switching application

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N Channel 60V 30A 0.032ohm TO-220 Through Hole 10V 2.5V 70W 3Pins 175°C - AEC-Q101
STW10NK60Z
STW10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

SC06449

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip b...

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N Channel 600V 10A 0.65ohm TO-247 Through Hole 10V 3.75V 156W 3Pins 150°C - -
IRLZ34NPBF
IRLZ34NPBF - Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

SC11125

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

INFINEON

The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 55V 27A 0.035ohm TO-220AB Through Hole 10V 2V 56W 3Pins 175°C - -
IRF9Z24NPBF
IRF9Z24NPBF - Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

SC11122

Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 12A 0.175ohm TO-220AB Through Hole 10V 4V 45W 3Pins 175°C - -
IRFP4468PBF
IRFP4468PBF - Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

SC15830

 
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Data Sheet
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RoHS

Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

INFINEON

The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 290A 0.002ohm TO-247AC Through Hole 20V 4V 520W 3Pins 175°C - -
STP16NF06L..
STP16NF06L.. - Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

SC11129

Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...

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N Channel 60V 16A 0.07ohm TO-220 Through Hole 10V 1V 45W 3Pins 175°C - -
IRF9321TRPBF
IRF9321TRPBF - Power MOSFET, P Channel, 30V, 15A, 0.0059 Ohm, SOIC, SMD

SC15976

 
New product
Data Sheet
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RoHS

Power MOSFET, P Channel, 30V, 15A, 0.0059 Ohm, SOIC, SMD

INFINEON

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P Channel 30V 15A 0.0059ohm SOIC Surface Mount 10V 1.8V 2.5W 8Pins 150°C HEXFET Series -
FDS4435BZ
FDS4435BZ - Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount

SC16772

Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount

ONSEMI

The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...

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P Channel 30V 8.8A 0.016ohm SOIC Surface Mount 10V 2.1V 2.5W 8Pins 150°C - -
IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

SC15755

 
New product
Data Sheet
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RoHS

Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Fast Switching • Simple Drive Requirements • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Ease...

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N Channel 100V 5.6A 0.54ohm TO-220AB Through Hole 10V 4V 43W 3Pins 175°C - -
HUF75339P3
HUF75339P3 - Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

SC12748

Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

ONSEMI

The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...

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N Channel 55V 75A 0.012ohm TO-220AB Through Hole 10V 4V 200W 3Pins 175°C - -
BS270
BS270 - Power MOSFET, N Channel, 60 V, 400 mA, 1.2 ohm, TO-92, Through Hole

SC06958

Power MOSFET, N Channel, 60 V, 400 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 400mA 1.2ohm TO-92 Through Hole 10V 2.1V 625mW 3Pins 150°C - -
IXFN73N30
IXFN73N30 - Power MOSFET, N Channel, 300 V, 73 A, 0.045 ohm, ISOTOP, Module

SC17027

Power MOSFET, N Channel, 300 V, 73 A, 0.045 ohm, ISOTOP, Module

IXYS SEMICONDUCTOR

The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode application...

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N Channel 300V 73A 0.045ohm ISOTOP Module 10V 4V 520W 3Pins 150°C - -
LND150N3-G
LND150N3-G - Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole

SC16955

Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole

MICROCHIP

The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant...

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N Channel 500V 30mA 850ohm TO-92 Through Hole 0V - 740mW 3Pins 150°C - -
VP2106N3-G
VP2106N3-G - Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92

SC15966

 
New product
Data Sheet
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RoHS

Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92

MICROCHIP

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P Channel 60V 250mA 9ohm TO-92 Through Hole 10V 3.5V 1W 3Pins 150°C - -
FDD5614P
FDD5614P - Power MOSFET, P Channel, 60 V, 15 A, 0.1 ohm, TO-252 (DPAK), Surface Mount

SC11192

Power MOSFET, P Channel, 60 V, 15 A, 0.1 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The FDD5614P is a P-channel MOSFET uses high voltage PowerTrench® process, fast switching speed, high performance trench technology for extremely low RDS (ON). • High power and current handling capability

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P Channel 60V 15A 0.1ohm TO-252 (DPAK) Surface Mount 10V 1.6V 42W 3Pins 175°C - -