Single MOSFET Transistors

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Channel Type Transistor Polarity Continuous Drain Current Id Drain Source Voltage Vds Drain Source On State Resistance On Resistance Rds(on) Rds(on) Test Voltage Transistor Mounting Transistor Case Style Gate Source Threshold Voltage Max Power Dissipation Pd Power Dissipation No. of Pins Operating Temperature Max Qualification Product Range Automotive Qualification Standard
 
 
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BSS123,215
BSS123,215 - Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

SC19225

Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

NEXPERIA

The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...

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N Channel N Channel 150mA 100V 3.5ohm 3.5ohm 10V Surface Mount SOT-23 2V 250mW 250mW 3Pins 150°C - - -
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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N Channel N Channel 4.3A 60V 0.125ohm 0.125ohm 10V Surface Mount SOT-23 2V 3.3W 3.3W 3Pins 175°C AEC-Q101 TrenchFET AEC-Q101
BSH103,215
BSH103,215 - Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

SC19198

Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

NEXPERIA

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...

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N Channel N Channel 850mA 30V 0.4ohm 0.4ohm 4.5V Surface Mount TO-236AB 400mV 750mW 750mW 3Pins 150°C - - -
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 - Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount

SC16736

Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount

INFINEON

The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection

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P Channel P Channel 2A 30V 0.062ohm 0.062ohm 10V Surface Mount SOT-23 1.5V 500mW 500mW 3Pins 150°C AEC-Q101 - AEC-Q101
FDB14N30TM
FDB14N30TM - Power MOSFET, N Channel, 300 V, 14 A, 0.24 ohm, TO-263 (D2PAK), Surface Mount

SC16938

Power MOSFET, N Channel, 300 V, 14 A, 0.24 ohm, TO-263 (D2PAK), Surface Mount

ONSEMI

The FDB14N30TM is an UniFET™ N-channel high voltage MOSFET produced from on semiconductor's family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and highe...

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N Channel N Channel 14A 300V 0.24ohm 0.24ohm 10V Surface Mount TO-263 (D2PAK) 5V 140W 140W 2Pins 150°C - - -
FDV304P
FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount

SC16761

Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount

ONSEMI

The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....

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P Channel P Channel 460mA 25V 1.22ohm 1.22ohm 2.7V Surface Mount SOT-23 860mV 350mW 350mW 3Pins 150°C - - -
VP3203N3-G
VP3203N3-G - Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

SC16929

Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel P Channel 650mA 30V 0.6ohm 0.6ohm 10V Through Hole TO-92 3.5V 740mW 740mW 3Pins 150°C - - -
IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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N Channel N Channel 9.7A 100V 0.2ohm 0.2ohm 10V Through Hole TO-220AB 4V 47W 47W 3Pins 175°C - - -
DMP4065S-7
DMP4065S-7 - Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

SC15956

Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

DIODES INC.

• Channel Type : P Channel • Transistor Polarity : P Channel • Continuous Drain Current Id : 2.4A • Drain Source Voltage Vds : 40V • Drain Source On State Resistance : 0.064ohm • On Resistance Rds(on) : 0.064ohm • Rds(on) Test Voltage : 10V • Transistor Mounting : Surface Mount • Transistor Case Style : SOT-23 • Gate Source Threshold Voltage Max : 3V • Power Dissipation Pd : 720mW • Power Dissipation : 720mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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P Channel P Channel 2.4A 40V 0.064ohm 0.064ohm 10V Surface Mount SOT-23 3V 720mW 720mW 3Pins 150°C - - -
SPP80P06PHXKSA1
SPP80P06PHXKSA1 - Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

SC15768

Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

INFINEON

The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit character...

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P Channel P Channel 80A 60V 0.021ohm 0.021ohm 10V Through Hole TO-220 3V 340W 340W 3Pins 175°C AEC-Q101 - AEC-Q101
IRLML0040TRPBF
IRLML0040TRPBF - Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

SC16758

Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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N Channel N Channel 3.6A 40V 0.044ohm 0.044ohm 10V Surface Mount SOT-23 1.8V 1.3W 1.3W 3Pins 150°C - - -
BSP613PH6327XTSA1
BSP613PH6327XTSA1 - Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

SC16854

Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

INFINEON

The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. • Enhancement mode • Avalanche...

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P Channel P Channel 2.9A 60V 0.11ohm 0.11ohm 10V Surface Mount SOT-223 3V 1.8W 1.8W 4Pins 150°C AEC-Q101 - AEC-Q101
STD30NF06LT4
STD30NF06LT4 - Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

SC16912

Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment s...

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N Channel N Channel 35A 60V 0.022ohm 0.022ohm 2.5V Surface Mount TO-252 (DPAK) 1.7V 70W 70W 3Pins 175°C - - -
IRLML2030TRPBF
IRLML2030TRPBF - Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

SC16739

Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...

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N Channel N Channel 2.7A 30V 0.08ohm 0.08ohm 10V Surface Mount SOT-23 1.7V 1.3W 1.3W 3Pins 150°C - - -
PMV20ENR
PMV20ENR - SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

SC16980

SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

NEXPERIA

The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...

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N Channel N Channel 6A 30V 0.017ohm 0.017ohm 10V Surface Mount TO-236AB 1.5V 510mW 510mW 3Pins 150°C - - -
2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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N Channel N Channel 200mA 60V 5ohm 5ohm 10V Through Hole TO-92 2.1V 400mW 400mW 3Pins 150°C - - -
NDS355AN
NDS355AN - Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount

SC06991

Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount

ONSEMI

The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low ...

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N Channel N Channel 1.7A 30V 0.065ohm 0.065ohm 10V Surface Mount SOT-23 1.6V 500mW 500mW 3Pins 150°C - - -
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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P Channel P Channel 23A 100V 0.117ohm 0.117ohm 10V Through Hole TO-220AB 4V 140W 140W 3Pins 175°C - - -
IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel N Channel 36A 100V 0.0265ohm 0.0265ohm 10V Through Hole TO-220AB 4V 92W 92W 3Pins 175°C - - -
IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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P Channel P Channel 8.8A 60V 0.28ohm 0.28ohm 10V Surface Mount TO-252 (DPAK) 4V 42W 42W 3Pins 150°C - - -
IRLML2402PBF
IRLML2402PBF - Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

SC06986

Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...

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N Channel N Channel 1.2A 20V 0.25ohm 0.25ohm 4.5V Surface Mount SOT-23 700mV 540mW 540mW 3Pins 150°C - - -
FDN358P
FDN358P - Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

SC07005

Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

ONSEMI

The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...

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P Channel P Channel 1.6A 30V 0.2ohm 0.2ohm 10V Surface Mount SOT-23 1.9V 560mW 560mW 3Pins 150°C - - -
RFP12N10L
RFP12N10L - Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

SC11126

Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

ONSEMI

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...

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N Channel N Channel 12A 100V 0.2ohm 0.2ohm 5V Through Hole TO-220AB 2V 60W 60W 3Pins 150°C - - -
FDN337N
FDN337N - Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

SC06984

Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...

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N Channel N Channel 2.2A 30V 0.065ohm 0.065ohm 4.5V Surface Mount SuperSOT 700mV 500mW 500mW 3Pins 150°C - - -
IRFB4710PBF
IRFB4710PBF - Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

SC11091

Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...

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N Channel N Channel 75A 100V 0.014ohm 0.014ohm 10V Through Hole TO-220AB 5.5V 200W 200W 3Pins 175°C - - -