Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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SI2319CDS-T1-GE3
SI2319CDS-T1-GE3 - Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount

SC16704

Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount

VISHAY

The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage

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P Channel 40V 4.4A 0.064ohm SOT-23 Surface Mount 10V 1.2V 1.25W 3Pins 150°C - -
BSS123,215
BSS123,215 - Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

SC19225

Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

NEXPERIA

The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...

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N Channel 100V 150mA 3.5ohm SOT-23 Surface Mount 10V 2V 250mW 3Pins 150°C - -
SI2319DS-T1-E3
SI2319DS-T1-E3 - Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

SC19376

Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

VISHAY

The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...

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- 40V 3A 0.065ohm - - 10V 3V 750mW 3Pins 150°C - -
BSH103,215
BSH103,215 - Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

SC19198

Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

NEXPERIA

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...

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N Channel 30V 850mA 0.4ohm TO-236AB Surface Mount 4.5V 400mV 750mW 3Pins 150°C - -
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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N Channel 60V 4.3A 0.125ohm SOT-23 Surface Mount 10V 2V 3.3W 3Pins 175°C TrenchFET AEC-Q101
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...

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N Channel 650V 20.7A 0.19ohm TO-247 Through Hole 10V 3V 208W 3Pins 150°C - -
IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

SC15755

Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...

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- 100V 5.6A 0.54ohm - - 10V 4V 43W 3Pins 175°C - -
IRFP260NPBF
IRFP260NPBF - N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

SC16898

N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

INFINEON

The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...

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N Channel 200V 50A 0.04ohm TO-247AC Through Hole 10V 4V 300W 3Pins 175°C - -
VP3203N3-G
VP3203N3-G - Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

SC16929

Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel 30V 650mA 0.6ohm TO-92 Through Hole 10V 3.5V 740mW 3Pins 150°C - -
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 - Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount

SC16736

Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount

INFINEON

The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection

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P Channel 30V 2A 0.062ohm SOT-23 Surface Mount 10V 1.5V 500mW 3Pins 150°C - AEC-Q101
BSS138PW,115
BSS138PW,115 - Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

SC16000

Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

NEXPERIA

The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 320mA 0.9ohm SOT-323 Surface Mount 10V 1.2V 830mW 3Pins 150°C - -
IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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N Channel 100V 9.7A 0.2ohm TO-220AB Through Hole 10V 4V 47W 3Pins 175°C - -
STD30NF06LT4
STD30NF06LT4 - Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

SC16912

Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...

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N Channel 60V 35A 0.022ohm TO-252 (DPAK) Surface Mount 2.5V 1.7V 70W 3Pins 175°C - -
ZVP3306F
ZVP3306F - SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

SC16881

SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

DIODES INC.

The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.

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- 60V 90mA 14ohm - - 10V 3.5V 330mW 3Pins 150°C - -
IRLML0040TRPBF
IRLML0040TRPBF - Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

SC16758

Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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N Channel 40V 3.6A 0.044ohm SOT-23 Surface Mount 10V 1.8V 1.3W 3Pins 150°C - -
DMP4065S-7
DMP4065S-7 - Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

SC15956

Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

DIODES INC.

• Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 2.4A • Drain Source On State Resistance : 0.064ohm • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 720mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 40V 2.4A 0.064ohm - - 10V 3V 720mW 3Pins 150°C - -
IRLML2030TRPBF
IRLML2030TRPBF - Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

SC16739

Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...

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- 30V 2.7A 0.08ohm - - 10V 1.7V 1.3W 3Pins 150°C - -
PMV20ENR
PMV20ENR - SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

SC16980

SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

NEXPERIA

The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...

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N Channel 30V 6A 0.017ohm TO-236AB Surface Mount 10V 1.5V 510mW 3Pins 150°C - -
SPP80P06PHXKSA1
SPP80P06PHXKSA1 - Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

SC15768

Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

INFINEON

The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit character...

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P Channel 60V 80A 0.021ohm TO-220 Through Hole 10V 3V 340W 3Pins 175°C - AEC-Q101
IRFB3206PBF
IRFB3206PBF - Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

SC17003

Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...

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N Channel 60V 210A 0.003ohm TO-220AB Through Hole 10V 4V 300W 3Pins 175°C - -
BSC093N04LSGATMA1
BSC093N04LSGATMA1 - Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount

SC16751

Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount

INFINEON

The BSC093N04LS G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high sys...

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N Channel 40V 49A 0.0078ohm PG-TDSON Surface Mount 10V 1.2V 35W 8Pins 150°C OptiMOS 3 Series -
2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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N Channel 60V 200mA 5ohm TO-92 Through Hole 10V 2.1V 400mW 3Pins 150°C - -
ZVP2110A
ZVP2110A - Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

SC06974

Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.

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- 100V 230mA 8ohm - - 10V 3.5V 700mW 3Pins 150°C - -
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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P Channel 100V 23A 0.117ohm TO-220AB Through Hole 10V 4V 140W 3Pins 175°C - -
FDN338P
FDN338P - Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount

SC11041

Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount

ONSEMI

The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...

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P Channel 20V 1.6A 0.13ohm SOT-23 Surface Mount 4.5V 800mV 500mW 3Pins 150°C - -