Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250PBF
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SC11176 |
Power MOSFET, N Channel, 200 V, 30 A, 0.085 ohm, TO-247AC, Through Hole VISHAY The IRFP250PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 30A | 0.085ohm | TO-247AC | Through Hole | 10V | 4V | 180W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV213SN
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SC06993 |
Power MOSFET, N Channel, 100 V, 1.9 A, 0.25 ohm, SOT-23, Surface Mount NXP The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications. • Low conduction losses due to low ON-state resistance • -55 to 150°C Ju...
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N Channel | 100V | 1.9A | 0.25ohm | SOT-23 | Surface Mount | 10V | 3V | 2W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI540NPBF
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SC11143 |
Power MOSFET, N Channel, 100 V, 20 A, 0.052 ohm, TO-220FP, Through Hole INFINEON The IRFI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • Isolated package • 2.5kVrms High voltage isolation • 4.8mm Sink to lead cre...
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N Channel | 100V | 20A | 0.052ohm | - | Through Hole | 10V | 4V | 42W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84
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SC11028 |
MOSFET, P, SOT23 NXP • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 130mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 50V | 130mA | - | SOT-23 | - | 10V | 2V | - | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VN10LP
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SC06959 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole DIODES INC. The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product
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N Channel | 60V | 270mA | 5ohm | TO-226AA | Through Hole | 10V | 2.5V | 625mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPW60R045CP
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SC11154 |
Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole INFINEON The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 60A | 0.04ohm | TO-247 | Through Hole | 10V | 3V | 431W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP3710PBF.
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SC11171 |
Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole INFINEON The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 100V | 57A | 0.025ohm | TO-247AC | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2110A
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SC06963 |
Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole DIODES INC. ZVN2110A is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 100V • Continuous drain current at Tamb=25° is 320mA • Pulsed drain current is 6A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 700mW • Drain-source b...
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N Channel | 100V | 320mA | 4ohm | TO-226AA | Through Hole | 10V | 2.4V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTF3055L108T1G
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SC11060 |
Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount ONSEMI The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 3A | 0.12ohm | SOT-223 | Surface Mount | 5V | 1.68V | 2.1W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF630NPBF
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SC11083 |
Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole INFINEON The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...
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N Channel | 200V | 9.3A | 0.3ohm | TO-220AB | Through Hole | 10V | 4V | 82W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS270
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SC06958 |
Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole ONSEMI The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 400mA | 2ohm | - | Through Hole | 10V | 2.1V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK50Z.
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SC06019 |
Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 125W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 10A | 0.48ohm | TO-220 | Through Hole | 10V | 3.75V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0605
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SC07011 |
Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...
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P Channel | 60V | 180mA | 5ohm | - | Surface Mount | 10V | 1.7V | 360mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9024PBF
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SC11066 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole VISHAY The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...
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P Channel | 60V | 8.8A | 0.28ohm | TO-251AA | Through Hole | 10V | 4V | 50W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRL520NPBF
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SC11136 |
Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole INFINEON The IRL520NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...
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N Channel | 100V | 10A | 0.18ohm | - | Through Hole | 10V | 2V | 48W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002
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SC06978 |
MOSFET, N, SOT23 NXP • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 300mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 60V | 300mA | - | SOT-23 | - | 10V | 2V | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF640NPBF
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SC11077 |
Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole INFINEON The IRF640NPBF is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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N Channel | 200V | 18A | 0.15ohm | - | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLZ44NPBF
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SC11128 |
Power MOSFET, N Channel, 55 V, 47 A, 0.022 ohm, TO-220AB, Through Hole INFINEON The IRLZ44NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | 55V | 47A | 0.022ohm | - | Through Hole | 10V | 2V | 110W | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002LT1G
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SC11038 |
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount ONSEMI The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current. • Halogen-free/BFR-free • ±20VDC Gate to source voltage • 60VDC Drain to gate voltage • 417°C/W Thermal resistance, junction to amb...
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N Channel | 60V | 115mA | 7.5ohm | SOT-23 | Surface Mount | 10V | 2.5V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1404PBF
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SC11147 |
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole INFINEON The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | 40V | 162A | 0.004ohm | - | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170P
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SC06957 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole DIODES INC. The BS170P is a N-channel enhancement-mode Vertical DMOSFET with moulded plastic case and solderable matte tin plated terminals as per MIL-STD-202 standard. • Halogen-free, Green device • Qualified to AEC-Q101 standards for high reliability • UL94V-0 Flamm...
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N Channel | 60V | 270mA | 5ohm | E-Line | Through Hole | 10V | 3V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPC50
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SC06289 |
Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 180W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 600V | 11A | 0.6ohm | TO-247AC | Through Hole | 10V | 2V | 180W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN360P
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SC07006 |
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...
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P Channel | 30V | 2A | 0.08ohm | - | Surface Mount | 10V | 1.9V | 500mW | 3Pins | 150°C | PowerTrench® MOSFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170
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SC06956 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole ONSEMI The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 500mA | 5ohm | - | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA70N10.
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SC06322 |
Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 70A • Drain Source On State Resistance : 0.023ohm • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 214W • No. of Pins : 3Pins • Operating Temperature Max : 175°C
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N Channel | 100V | 70A | 0.023ohm | - | Through Hole | 10V | 2V | 214W | 3Pins | 175°C | - | - |