Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRFP250PBF
IRFP250PBF - Power MOSFET, N Channel, 200 V, 30 A, 0.085 ohm, TO-247AC, Through Hole

SC11176

Power MOSFET, N Channel, 200 V, 30 A, 0.085 ohm, TO-247AC, Through Hole

VISHAY

The IRFP250PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 200V 30A 0.085ohm TO-247AC Through Hole 10V 4V 180W 3Pins 150°C - -
PMV213SN
PMV213SN - Power MOSFET, N Channel, 100 V, 1.9 A, 0.25 ohm, SOT-23, Surface Mount

SC06993

Power MOSFET, N Channel, 100 V, 1.9 A, 0.25 ohm, SOT-23, Surface Mount

NXP

The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications. • Low conduction losses due to low ON-state resistance • -55 to 150°C Ju...

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N Channel 100V 1.9A 0.25ohm SOT-23 Surface Mount 10V 3V 2W 3Pins 150°C - -
IRFI540NPBF
IRFI540NPBF - Power MOSFET, N Channel, 100 V, 20 A, 0.052 ohm, TO-220FP, Through Hole

SC11143

Power MOSFET, N Channel, 100 V, 20 A, 0.052 ohm, TO-220FP, Through Hole

INFINEON

The IRFI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • Isolated package • 2.5kVrms High voltage isolation • 4.8mm Sink to lead cre...

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N Channel 100V 20A 0.052ohm - Through Hole 10V 4V 42W 3Pins 175°C - -
BSS84
BSS84 - MOSFET, P, SOT23

SC11028

MOSFET, P, SOT23

NXP

• Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 130mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 50V 130mA - SOT-23 - 10V 2V - 3Pins 150°C - -
VN10LP
VN10LP - Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

SC06959

Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

DIODES INC.

The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product

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N Channel 60V 270mA 5ohm TO-226AA Through Hole 10V 2.5V 625mW 3Pins 150°C - -
IPW60R045CP
IPW60R045CP - Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

SC11154

Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

INFINEON

The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...

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N Channel 650V 60A 0.04ohm TO-247 Through Hole 10V 3V 431W 3Pins 150°C - -
IRFP3710PBF.
IRFP3710PBF. - Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

SC11171

Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

INFINEON

The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 57A 0.025ohm TO-247AC Through Hole 10V 4V 200W 3Pins 175°C - -
ZVN2110A
ZVN2110A - Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole

SC06963

Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole

DIODES INC.

ZVN2110A is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 100V • Continuous drain current at Tamb=25° is 320mA • Pulsed drain current is 6A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 700mW • Drain-source b...

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N Channel 100V 320mA 4ohm TO-226AA Through Hole 10V 2.4V 700mW 3Pins 150°C - -
NTF3055L108T1G
NTF3055L108T1G - Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

SC11060

Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

ONSEMI

The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 3A 0.12ohm SOT-223 Surface Mount 5V 1.68V 2.1W 4Pins 175°C - -
IRF630NPBF
IRF630NPBF - Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

SC11083

Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

INFINEON

The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...

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N Channel 200V 9.3A 0.3ohm TO-220AB Through Hole 10V 4V 82W 3Pins 175°C - -
BS270
BS270 - Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole

SC06958

Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole

ONSEMI

The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 400mA 2ohm - Through Hole 10V 2.1V 625mW 3Pins 150°C - -
STP11NK50Z.
STP11NK50Z. - Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

SC06019

Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 125W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 500V 10A 0.48ohm TO-220 Through Hole 10V 3.75V 125W 3Pins 150°C - -
NDS0605
NDS0605 - Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

SC07011

Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...

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P Channel 60V 180mA 5ohm - Surface Mount 10V 1.7V 360mW 3Pins 150°C - -
IRFU9024PBF
IRFU9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

SC11066

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...

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P Channel 60V 8.8A 0.28ohm TO-251AA Through Hole 10V 4V 50W 3Pins 150°C - -
IRL520NPBF
IRL520NPBF - Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

SC11136

Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

INFINEON

The IRL520NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel 100V 10A 0.18ohm - Through Hole 10V 2V 48W 3Pins 175°C - -
2N7002
2N7002 - MOSFET, N, SOT23

SC06978

MOSFET, N, SOT23

NXP

• Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 300mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 60V 300mA - SOT-23 - 10V 2V - 3Pins 150°C - -
IRF640NPBF
IRF640NPBF - Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole

SC11077

Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole

INFINEON

The IRF640NPBF is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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N Channel 200V 18A 0.15ohm - Through Hole 10V 4V 150W 3Pins 175°C - -
IRLZ44NPBF
IRLZ44NPBF - Power MOSFET, N Channel, 55 V, 47 A, 0.022 ohm, TO-220AB, Through Hole

SC11128

Power MOSFET, N Channel, 55 V, 47 A, 0.022 ohm, TO-220AB, Through Hole

INFINEON

The IRLZ44NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

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N Channel 55V 47A 0.022ohm - Through Hole 10V 2V 110W 3Pins 175°C HEXFET Series -
2N7002LT1G
2N7002LT1G - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

SC11038

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current. • Halogen-free/BFR-free • ±20VDC Gate to source voltage • 60VDC Drain to gate voltage • 417°C/W Thermal resistance, junction to amb...

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N Channel 60V 115mA 7.5ohm SOT-23 Surface Mount 10V 2.5V 200mW 3Pins 150°C - -
IRF1404PBF
IRF1404PBF - Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

SC11147

Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

INFINEON

The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

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N Channel 40V 162A 0.004ohm - Through Hole 10V 4V 200W 3Pins 175°C - -
BS170P
BS170P - Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole

SC06957

Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole

DIODES INC.

The BS170P is a N-channel enhancement-mode Vertical DMOSFET with moulded plastic case and solderable matte tin plated terminals as per MIL-STD-202 standard. • Halogen-free, Green device • Qualified to AEC-Q101 standards for high reliability • UL94V-0 Flamm...

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N Channel 60V 270mA 5ohm E-Line Through Hole 10V 3V 625mW 3Pins 150°C - -
IRFPC50
IRFPC50 - Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

SC06289

Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 180W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 600V 11A 0.6ohm TO-247AC Through Hole 10V 2V 180W 3Pins 150°C - -
FDN360P
FDN360P - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC07006

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

ONSEMI

The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...

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P Channel 30V 2A 0.08ohm - Surface Mount 10V 1.9V 500mW 3Pins 150°C PowerTrench® MOSFET -
BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 500mA 5ohm - Through Hole 10V 2.1V 830mW 3Pins 150°C - -
FQA70N10.
FQA70N10. - Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

SC06322

Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 70A • Drain Source On State Resistance : 0.023ohm • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 214W • No. of Pins : 3Pins • Operating Temperature Max : 175°C

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N Channel 100V 70A 0.023ohm - Through Hole 10V 2V 214W 3Pins 175°C - -