Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRLB4132PBF
IRLB4132PBF - Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-220AB, Through Hole

SC17012

Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-220AB, Through Hole

INFINEON

HEXFET® Power MOSFET in TO-220AB package optimized for UPS/inverter applications. • Very low RDS(on) at 4.5V VGS • Ultra-low gate impedance • Fully characterized avalanche voltage and current

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N Channel 30V 78A 0.0025ohm TO-220AB Through Hole 10V 1.8V 140W 3Pins 175°C HEXFET -
SI2301CDS-T1-E3
SI2301CDS-T1-E3 - Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount

SC16887

Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount

VISHAY

Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...

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P Channel 20V 3.1A 0.11ohm SOT-23 Surface Mount 2.5V 400mV 1.6W 3Pins 150°C - -
NTD20P06LT4G
NTD20P06LT4G - Power MOSFET, P Channel, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Surface Mount

SC16990

Power MOSFET, P Channel, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes. • Low gate charge for fast swi...

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P Channel 60V 15.5A 0.143ohm TO-252 (DPAK) Surface Mount 5V 1.5V 65W 3Pins 175°C - -
SI7850DP-T1-E3
SI7850DP-T1-E3 - Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

SC16843

Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

VISHAY

The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...

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N Channel 60V 10.3A 0.022ohm PowerPAK SO Surface Mount 10V 3V 1.8W 8Pins 150°C - -
BSS126H6327XTSA2
BSS126H6327XTSA2 - Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount

SC16946

Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount

INFINEON

The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...

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N Channel 600V 21mA 280ohm SOT-23 Surface Mount 10V 2V 500mW 3Pins 150°C - AEC-Q101
DMN6075S-7
DMN6075S-7 - SMD N Channel Power MOSFET, 60V, 2A, 0.069 Ohm, SOT-23

SC17019

SMD N Channel Power MOSFET, 60V, 2A, 0.069 Ohm, SOT-23

DIODES INC.

This new generation MOSFET is designed to minimise the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications • Suitable for DC/DC converters, Power management functions and ba...

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N Channel 60V 2A 0.085ohm SOT-23 Surface Mount 10V 3V 800mW 3Pins 150°C - -
CSD18504Q5A
CSD18504Q5A - SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

SC16683

SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

TEXAS INSTRUMENTS

The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...

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N Channel 40V 50A 0.0053ohm VSON Surface Mount 10V 1.9V 77W 8Pins 150°C - -
SI2369DS-T1-GE3
SI2369DS-T1-GE3 - Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount

SC16757

Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount

VISHAY

The SI2369DS-T1-GE3 is a P-Channel 30V Power MOSFET with ±20V gate source voltage. It works on Trench MOSFET® technology. • 100% Rg Tested • Halogen-free

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P Channel 30V 7.6A 0.024ohm SOT-23 Surface Mount 10V - 2.5W 3Pins 150°C - -
2N7002BK,215
2N7002BK,215 - Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

SC15984

Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...

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N Channel 60V 350mA 1ohm SOT-23 Surface Mount 10V 1.6V 440mW 3Pins 150°C - -
HUF75344G3
HUF75344G3 - Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole

SC16989

Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole

ONSEMI

The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mod...

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N Channel 55V 75A 0.0065ohm TO-247 Through Hole 10V 4V 285W 3Pins 175°C - -
FDN5630
FDN5630 - Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

SC16780

Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...

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N Channel 60V 1.7A 0.1ohm SuperSOT Surface Mount 10V 2.4V 500mW 3Pins 150°C - -
FQP17P10
FQP17P10 - Power MOSFET, P Channel, 100 V, 16.5 A, 0.19 ohm, TO-220, Through Hole

SC08207

Power MOSFET, P Channel, 100 V, 16.5 A, 0.19 ohm, TO-220, Through Hole

ONSEMI

The FQP17P10 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high av...

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P Channel 100V 16.5A 0.19ohm - Through Hole 10V 4V 100W 3Pins 175°C - -