Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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STN4NF03L
STN4NF03L - Power MOSFET, N Channel, 30 V, 6.5 A, 0.039 ohm, SOT-223, Surface Mount

SC21523

 
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Power MOSFET, N Channel, 30 V, 6.5 A, 0.039 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

The STN4NF03L is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps ...

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N Channel 30V 6.5A 0.039ohm SOT-223 Surface Mount 10V 1V 3.3W 4Pins 150°C - -
TP0610K-T1-E3
TP0610K-T1-E3 - Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount

SC21613

 
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Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount

VISHAY

The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. • Low ON-resistance • High-side switching • Low threshold • 20ns Fast switching spee...

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P Channel 60V 185mA 6ohm SOT-23 Surface Mount 10V 3V 350mW 3Pins 150°C - -
NX3008PBKW,115
NX3008PBKW,115 - Power MOSFET, P Channel, 30 V, 200 mA, 2.8 ohm, SOT-323, Surface Mount

SC21424

 
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Power MOSFET, P Channel, 30 V, 200 mA, 2.8 ohm, SOT-323, Surface Mount

NEXPERIA

The NX3008PBKW is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for relay driver, high-speed line driver and high-side loadswitch. • Logic-level compatible • Very fast s...

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P Channel 30V 200mA 2.8ohm SOT-323 Surface Mount 4.5V 900mV 260mW 3Pins 150°C - -
SI2347DS-T1-GE3
SI2347DS-T1-GE3 - Power MOSFET, P Channel, 30 V, 5 A, 0.033 ohm, SOT-23, Surface Mount

SC21594

 
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Power MOSFET, P Channel, 30 V, 5 A, 0.033 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 5A • Drain Source On State Resistance : 0.033ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1.7W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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P Channel 30V 5A 0.033ohm SOT-23 Surface Mount 10V 2.5V 1.7W 3Pins 150°C - -
SI1022R-T1-GE3
SI1022R-T1-GE3 - Power MOSFET, N Channel, 60 V, 330 mA, 1.25 ohm, SC-75A, Surface Mount

SC21592

 
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Power MOSFET, N Channel, 60 V, 330 mA, 1.25 ohm, SC-75A, Surface Mount

VISHAY

The SI1022R-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers. • 2000V Gate-source ESD protected • Low ON-resistance • Low threshold • 25ns Fast switching spee...

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N Channel 60V 330mA 1.25ohm SC-75A Surface Mount 10V 2.5V 250mW 3Pins 150°C - -
BSS123NH6327XTSA1
BSS123NH6327XTSA1 - Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount

SC21339

 
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Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount

INFINEON

• 100V, 0.19A OptiMOS™ N-channel small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101

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N Channel 100V 190mA 2.4ohm SOT-23 Surface Mount 10V 1.4V 500mW 3Pins 150°C - -
SQ2389ES-T1_GE3
SQ2389ES-T1_GE3 - Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

SC21607

 
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Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 3.3W • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101

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P Channel 40V 4.1A 0.094ohm SOT-23 Surface Mount 10V 2V 3.3W 3Pins 175°C TrenchFET AEC-Q101
DMN62D0U-7
DMN62D0U-7 - Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

SC21310

 
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Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

DIODES INC.

DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...

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N Channel 60V 380mA 2ohm SOT-23 Surface Mount 4.5V 1V 380mW 3Pins 150°C - -
DMP2120U-7
DMP2120U-7 - Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount

SC21311

 
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Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount

DIODES INC.

DMP2120U-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications i...

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P Channel 20V 3.8A 0.062ohm SOT-23 Surface Mount 4.5V 1V 800mW 3Pins 150°C - -
SQ1421EDH-T1_GE3
SQ1421EDH-T1_GE3 - Power MOSFET, P Channel, 60 V, 1.6 A, 0.23 ohm, SC-70, Surface Mount

SC21605

 
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Power MOSFET, P Channel, 60 V, 1.6 A, 0.23 ohm, SC-70, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 1.6A • Drain Source On State Resistance : 0.23ohm • Transistor Case Style : SC-70 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 3.3W • No. of Pins : 6Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101

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P Channel 60V 1.6A 0.23ohm SC-70 Surface Mount 10V 2V 3.3W 6Pins 175°C TrenchFET AEC-Q101
SUD50N06-09L-E3
SUD50N06-09L-E3 - Power MOSFET, N Channel, 60 V, 50 A, 0.0074 ohm, TO-252 (DPAK), Surface Mount

SC21611

 
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Power MOSFET, N Channel, 60 V, 50 A, 0.0074 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The SUD50N06-09L-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • -55 to 175°C Operating temperature range

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N Channel 60V 50A 0.0074ohm TO-252 (DPAK) Surface Mount 10V 2V 136W 3Pins 175°C - -
BS170-D26Z
BS170-D26Z - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC21472

 
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Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. Thi...

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N Channel 60V 500mA 1.2ohm TO-92 Through Hole 10V 2.1V 830mW 3Pins 150°C - -
SQJ479EP-T1_GE3
SQJ479EP-T1_GE3 - Power MOSFET, P Channel, 80 V, 32 A, 0.0275 ohm, PowerPAK SO, Surface Mount

SC21608

 
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Power MOSFET, P Channel, 80 V, 32 A, 0.0275 ohm, PowerPAK SO, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 80V • Continuous Drain Current Id : 32A • Drain Source On State Resistance : 0.0275ohm • Transistor Case Style : PowerPAK SO • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 68W • No. of Pins : 8Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101

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P Channel 80V 32A 0.0275ohm PowerPAK SO Surface Mount 10V 2V 68W 8Pins 175°C TrenchFET AEC-Q101
SI7145DP-T1-GE3
SI7145DP-T1-GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0021 ohm, PowerPAK SO, Surface Mount

SC21598

 
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Power MOSFET, P Channel, 30 V, 60 A, 0.0021 ohm, PowerPAK SO, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Drain Source On State Resistance : 0.0021ohm • Transistor Case Style : PowerPAK SO • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.3V • Power Dissipation : 104W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : TrenchFET

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P Channel 30V 60A 0.0021ohm PowerPAK SO Surface Mount 10V 2.3V 104W 8Pins 150°C TrenchFET -
FDPF55N06
FDPF55N06 - Power MOSFET, N Channel, 60V, 55A, 0.018 ohm, TO-220F

SC20049

Power MOSFET, N Channel, 60V, 55A, 0.018 ohm, TO-220F

ONSEMI

The FDPF55N06 is tailored ti reduce in-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factorfactor correction (PFC),...

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N Channel 60V 55A 0.018ohm TO-220F Through Hole 10V 4V 48W 3Pins 150°C UniFET -
IRF540NSTRLPBF
IRF540NSTRLPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

SC21341

 
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Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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N Channel 100V 33A 0.044ohm TO-263 (D2PAK) Surface Mount 10V 4V 130W 3Pins 175°C - -
2N7002A-7
2N7002A-7 - Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount

SC21288

 
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Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount

DIODES INC.

2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control. ...

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N Channel 60V 180mA 6ohm SOT-23 Surface Mount 5V 2V 370mW 3Pins 150°C - -
SI4463CDY-T1-GE3
SI4463CDY-T1-GE3 - Power MOSFET, P Channel, 20 V, 18.6 A, 0.006 ohm, SOIC, Surface Mount

SC21596

 
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Power MOSFET, P Channel, 20 V, 18.6 A, 0.006 ohm, SOIC, Surface Mount

VISHAY

The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...

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P Channel 20V 18.6A 0.006ohm SOIC Surface Mount 10V 600mV 5W 8Pins 150°C - -
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - Power MOSFET, N Channel, 25 V, 100 A, 800 µohm, TDSON, Surface Mount

SC21338

 
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Power MOSFET, N Channel, 25 V, 100 A, 800 µohm, TDSON, Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Drain Source On State Resistance : 800µohm • Transistor Case Style : TDSON • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.6V • Power Dissipation : 74W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : OptiMOS 5

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N Channel 25V 100A 800µohm TDSON Surface Mount 10V 1.6V 74W 8Pins 150°C OptiMOS 5 -
DMP3099L-7
DMP3099L-7 - Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

SC21313

 
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Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

DIODES INC.

DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...

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P Channel 30V 3.8A 0.065ohm SOT-23 Surface Mount 10V 2.1V 1.08W 3Pins 150°C - -
SI7113DN-T1-GE3
SI7113DN-T1-GE3 - Power MOSFET, P Channel, 100 V, 13.2 A, 0.119 ohm, PowerPAK 1212, Surface Mount

SC21597

 
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Power MOSFET, P Channel, 100 V, 13.2 A, 0.119 ohm, PowerPAK 1212, Surface Mount

VISHAY

• P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies

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P Channel 100V 13.2A 0.119ohm PowerPAK 1212 Surface Mount 4.5V 1V 52W 8Pins 150°C - -
SI3456DDV-T1-GE3
SI3456DDV-T1-GE3 - Power MOSFET, N Channel, 30 V, 6.3 A, 0.033 ohm, TSOP, Surface Mount

SC21595

 
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Power MOSFET, N Channel, 30 V, 6.3 A, 0.033 ohm, TSOP, Surface Mount

VISHAY

The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range

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N Channel 30V 6.3A 0.033ohm TSOP Surface Mount 10V 1.2V 1.7W 6Pins 150°C - -
NDS0610
NDS0610 - Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount

SC21483

 
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Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...

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P Channel 60V 120mA 10ohm SOT-23 Surface Mount 10V 1.7V 300mW 3Pins 150°C - -
SQ2364EES-T1_GE3
SQ2364EES-T1_GE3 - Power MOSFET, N Channel, 60 V, 2 A, 0.19 ohm, SOT-23, Surface Mount

SC21606

 
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Power MOSFET, N Channel, 60 V, 2 A, 0.19 ohm, SOT-23, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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N Channel 60V 2A 0.19ohm SOT-23 Surface Mount 4.5V 600mV 3W 3Pins 175°C TrenchFET AEC-Q101
2N7002BKW,115
2N7002BKW,115 - Power MOSFET, N Channel, 60 V, 310 mA, 1 ohm, SOT-323, Surface Mount

SC21405

 
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Power MOSFET, N Channel, 60 V, 310 mA, 1 ohm, SOT-323, Surface Mount

NEXPERIA

The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...

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N Channel 60V 310mA 1ohm SOT-323 Surface Mount 10V 1.6V 275mW 3Pins 150°C - -