Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN4NF03L
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SC21523 |
Power MOSFET, N Channel, 30 V, 6.5 A, 0.039 ohm, SOT-223, Surface Mount STMICROELECTRONICS The STN4NF03L is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps ...
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N Channel | 30V | 6.5A | 0.039ohm | SOT-223 | Surface Mount | 10V | 1V | 3.3W | 4Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP0610K-T1-E3
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SC21613 |
Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount VISHAY The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. • Low ON-resistance • High-side switching • Low threshold • 20ns Fast switching spee...
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P Channel | 60V | 185mA | 6ohm | SOT-23 | Surface Mount | 10V | 3V | 350mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NX3008PBKW,115
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SC21424 |
Power MOSFET, P Channel, 30 V, 200 mA, 2.8 ohm, SOT-323, Surface Mount NEXPERIA The NX3008PBKW is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for relay driver, high-speed line driver and high-side loadswitch. • Logic-level compatible • Very fast s...
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P Channel | 30V | 200mA | 2.8ohm | SOT-323 | Surface Mount | 4.5V | 900mV | 260mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2347DS-T1-GE3
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SC21594 |
Power MOSFET, P Channel, 30 V, 5 A, 0.033 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 5A • Drain Source On State Resistance : 0.033ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1.7W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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P Channel | 30V | 5A | 0.033ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.7W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1022R-T1-GE3
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SC21592 |
Power MOSFET, N Channel, 60 V, 330 mA, 1.25 ohm, SC-75A, Surface Mount VISHAY The SI1022R-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers. • 2000V Gate-source ESD protected • Low ON-resistance • Low threshold • 25ns Fast switching spee...
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N Channel | 60V | 330mA | 1.25ohm | SC-75A | Surface Mount | 10V | 2.5V | 250mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123NH6327XTSA1
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SC21339 |
Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount INFINEON • 100V, 0.19A OptiMOS™ N-channel small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101
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N Channel | 100V | 190mA | 2.4ohm | SOT-23 | Surface Mount | 10V | 1.4V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2389ES-T1_GE3
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SC21607 |
Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 3.3W • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101
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P Channel | 40V | 4.1A | 0.094ohm | SOT-23 | Surface Mount | 10V | 2V | 3.3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN62D0U-7
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SC21310 |
Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount DIODES INC. DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...
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N Channel | 60V | 380mA | 2ohm | SOT-23 | Surface Mount | 4.5V | 1V | 380mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2120U-7
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SC21311 |
Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount DIODES INC. DMP2120U-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications i...
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P Channel | 20V | 3.8A | 0.062ohm | SOT-23 | Surface Mount | 4.5V | 1V | 800mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ1421EDH-T1_GE3
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SC21605 |
Power MOSFET, P Channel, 60 V, 1.6 A, 0.23 ohm, SC-70, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 1.6A • Drain Source On State Resistance : 0.23ohm • Transistor Case Style : SC-70 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 3.3W • No. of Pins : 6Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101
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P Channel | 60V | 1.6A | 0.23ohm | SC-70 | Surface Mount | 10V | 2V | 3.3W | 6Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUD50N06-09L-E3
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SC21611 |
Power MOSFET, N Channel, 60 V, 50 A, 0.0074 ohm, TO-252 (DPAK), Surface Mount VISHAY The SUD50N06-09L-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • -55 to 175°C Operating temperature range
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N Channel | 60V | 50A | 0.0074ohm | TO-252 (DPAK) | Surface Mount | 10V | 2V | 136W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D26Z
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SC21472 |
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole ONSEMI The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. Thi...
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N Channel | 60V | 500mA | 1.2ohm | TO-92 | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQJ479EP-T1_GE3
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SC21608 |
Power MOSFET, P Channel, 80 V, 32 A, 0.0275 ohm, PowerPAK SO, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 80V • Continuous Drain Current Id : 32A • Drain Source On State Resistance : 0.0275ohm • Transistor Case Style : PowerPAK SO • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 68W • No. of Pins : 8Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101
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P Channel | 80V | 32A | 0.0275ohm | PowerPAK SO | Surface Mount | 10V | 2V | 68W | 8Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7145DP-T1-GE3
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SC21598 |
Power MOSFET, P Channel, 30 V, 60 A, 0.0021 ohm, PowerPAK SO, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Drain Source On State Resistance : 0.0021ohm • Transistor Case Style : PowerPAK SO • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.3V • Power Dissipation : 104W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : TrenchFET
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P Channel | 30V | 60A | 0.0021ohm | PowerPAK SO | Surface Mount | 10V | 2.3V | 104W | 8Pins | 150°C | TrenchFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDPF55N06
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SC20049 |
Power MOSFET, N Channel, 60V, 55A, 0.018 ohm, TO-220F ONSEMI The FDPF55N06 is tailored ti reduce in-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factorfactor correction (PFC),...
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N Channel | 60V | 55A | 0.018ohm | TO-220F | Through Hole | 10V | 4V | 48W | 3Pins | 150°C | UniFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NSTRLPBF
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SC21341 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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N Channel | 100V | 33A | 0.044ohm | TO-263 (D2PAK) | Surface Mount | 10V | 4V | 130W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002A-7
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SC21288 |
Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. 2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control. ...
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N Channel | 60V | 180mA | 6ohm | SOT-23 | Surface Mount | 5V | 2V | 370mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4463CDY-T1-GE3
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SC21596 |
Power MOSFET, P Channel, 20 V, 18.6 A, 0.006 ohm, SOIC, Surface Mount VISHAY The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...
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P Channel | 20V | 18.6A | 0.006ohm | SOIC | Surface Mount | 10V | 600mV | 5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC009NE2LS5IATMA1
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SC21338 |
Power MOSFET, N Channel, 25 V, 100 A, 800 µohm, TDSON, Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Drain Source On State Resistance : 800µohm • Transistor Case Style : TDSON • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.6V • Power Dissipation : 74W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : OptiMOS 5
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N Channel | 25V | 100A | 800µohm | TDSON | Surface Mount | 10V | 1.6V | 74W | 8Pins | 150°C | OptiMOS 5 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3099L-7
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SC21313 |
Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount DIODES INC. DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...
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P Channel | 30V | 3.8A | 0.065ohm | SOT-23 | Surface Mount | 10V | 2.1V | 1.08W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7113DN-T1-GE3
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SC21597 |
Power MOSFET, P Channel, 100 V, 13.2 A, 0.119 ohm, PowerPAK 1212, Surface Mount VISHAY • P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies
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P Channel | 100V | 13.2A | 0.119ohm | PowerPAK 1212 | Surface Mount | 4.5V | 1V | 52W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI3456DDV-T1-GE3
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SC21595 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.033 ohm, TSOP, Surface Mount VISHAY The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range
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N Channel | 30V | 6.3A | 0.033ohm | TSOP | Surface Mount | 10V | 1.2V | 1.7W | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0610
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SC21483 |
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...
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P Channel | 60V | 120mA | 10ohm | SOT-23 | Surface Mount | 10V | 1.7V | 300mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2364EES-T1_GE3
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SC21606 |
Power MOSFET, N Channel, 60 V, 2 A, 0.19 ohm, SOT-23, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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N Channel | 60V | 2A | 0.19ohm | SOT-23 | Surface Mount | 4.5V | 600mV | 3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKW,115
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SC21405 |
Power MOSFET, N Channel, 60 V, 310 mA, 1 ohm, SOT-323, Surface Mount NEXPERIA The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...
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N Channel | 60V | 310mA | 1ohm | SOT-323 | Surface Mount | 10V | 1.6V | 275mW | 3Pins | 150°C | - | - |