Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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ZVN4306A
ZVN4306A - Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole

SC06968

Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4306A is a 60V E-Line N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals. The MOSFET is ideal for DC/DC convertors and solenoids/relay drivers for automotive. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0...

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N Channel 60V 1.1A 0.45ohm TO-226AA Through Hole 10V 3V 850mW 3Pins 150°C - -
2N7002
2N7002 - Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount

SC11027

Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...

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N Channel 60V 115mA 1.2ohm - Surface Mount 10V 2.1V 200mW 3Pins 150°C - -
STP16NF06L..
STP16NF06L.. - Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

SC11129

Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...

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N Channel 60V 16A 0.07ohm TO-220 Through Hole 10V 1V 45W 3Pins 175°C - -
IRF9Z34NPBF
IRF9Z34NPBF - Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

SC11120

Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 17A 0.1ohm - Through Hole 10V 4V 56W 3Pins 175°C - -
IRFR9110PBF
IRFR9110PBF - Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

SC11203

Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave sol...

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P Channel 100V 3.1A 1.2ohm TO-252 (DPAK) Surface Mount 10V 4V 25W 3Pins 150°C - -
STW10NK60Z
STW10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

SC06449

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...

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N Channel 600V 10A 0.65ohm TO-247 Through Hole 10V 3.75V 156W 3Pins 150°C - -
IRFU014PBF
IRFU014PBF - Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole

SC11070

Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole

VISHAY

The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissi...

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N Channel 60V 8.4A 0.2ohm TO-251AA Through Hole 10V 4V 30W 3Pins 150°C - -
IRF830PBF
IRF830PBF - Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole

SC11101

Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...

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N Channel 500V 4.5A 1.5ohm TO-220AB Through Hole 10V 4V 74W 3Pins 150°C - -
IRFP264PBF
IRFP264PBF - Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole

SC11174

Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole

VISHAY

The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...

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N Channel 250V 38A 0.075ohm TO-247AC Through Hole 10V 4V 280W 3Pins 150°C - -
VNB35N07TR-E
VNB35N07TR-E - Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount

SC11022

Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount

STMICROELECTRONICS

The VNB35N07TR-E is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clam...

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N Channel 80V 18A 0.028ohm TO-263 (D2PAK) Surface Mount 10V 3V 125W 3Pins 150°C - -
IRL540NPBF
IRL540NPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

SC11124

Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

INFINEON

The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 100V 36A 0.044ohm - Through Hole 10V 2V 140W 3Pins 175°C - -
STP11NK40Z
STP11NK40Z - Power MOSFET, N Channel, 400 V, 9 A, 0.55 ohm, TO-220, Through Hole

SC11110

Power MOSFET, N Channel, 400 V, 9 A, 0.55 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP11NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure ...

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N Channel 400V 9A 0.55ohm TO-220 Through Hole 10V 3.75V 110W 3Pins 150°C - -
STP7NK40Z
STP7NK40Z - Power MOSFET, N Channel, 400 V, 5.4 A, 1 ohm, TO-220, Through Hole

SC08224

Power MOSFET, N Channel, 400 V, 5.4 A, 1 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP7NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a...

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N Channel 400V 5.4A 1ohm TO-220 Through Hole 10V 3.75V 70W 3Pins 150°C - -
IRF4905PBF
IRF4905PBF - Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

SC11119

Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

INFINEON

The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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P Channel 55V 74A 0.02ohm - Through Hole 10V 4V 200W 3Pins 175°C HEXFET Series -
IPP60R099CP
IPP60R099CP - Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole

SC11112

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole

INFINEON

The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...

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N Channel 650V 31A 0.09ohm TO-220 Through Hole 10V 3V 255W 3Pins 150°C - -
FQP27P06
FQP27P06 - Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole

SC08209

Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole

ONSEMI

The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...

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P Channel 60V 27A 0.07ohm - Through Hole 10V 4V 120W 3Pins 175°C - -
ZVN3310A
ZVN3310A - Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole

SC06965

Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.

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N Channel 100V 200mA 10ohm TO-226AA Through Hole 10V 2.4V 625mW 3Pins 150°C - -
NDS7002A
NDS7002A - Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

SC06992

Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

ONSEMI

The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...

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N Channel 60V 280mA 2ohm - Surface Mount 10V 2.1V 300mW 3Pins 150°C - -
IRFZ44NPBF
IRFZ44NPBF - Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

SC08251

Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 55V 41A 0.0175ohm - Through Hole 10V 4V 94W 3Pins 175°C HEXFET Series -
SPD04N80C3
SPD04N80C3 - Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount

SC11153

Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm • Transistor Case Style : TO-252 (DPAK) • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 63W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 800V 4A 1.1ohm TO-252 (DPAK) Surface Mount 10V 3V 63W 3Pins 150°C - -
IRF9620
IRF9620 - Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole

SCIRF9620

Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm • Transistor Case Style : TO-220AB • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 40W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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P Channel 200V 3.5A 1.5ohm TO-220AB Through Hole 10V 2V 40W 3Pins 150°C - -
STP36NF06L
STP36NF06L - Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

SC11127

Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

STMICROELECTRONICS

• N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application

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N Channel 60V 30A 0.032ohm TO-220 Through Hole 10V 2.5V 70W 3Pins 175°C - AEC-Q101
ZVP0545A
ZVP0545A - Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole

SC06972

Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole

DIODES INC.

The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.

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P Channel 450V 45mA 150ohm E-Line Through Hole 10V 3V 700mW 3Pins 150°C - -
ZVN0545A
ZVN0545A - Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole

SC06961

Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole

DIODES INC.

The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.

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N Channel 450V 90mA 50ohm E-Line Through Hole 10V 3V 700mW 3Pins 150°C - -
IRFP22N50APBF
IRFP22N50APBF - Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole

SC11094

Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole

VISHAY

The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current

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N Channel 500V 22A 0.23ohm TO-247AC Through Hole 10V 4V 277W 3Pins 150°C - -