Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRF5305PBF
IRF5305PBF - Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

SC08218

Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

INFINEON

The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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P Channel 55V 31A 0.06ohm - Through Hole 10V 4V 110W 3Pins 175°C - -
STW12NK80Z.
STW12NK80Z. - Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole

SC06406

Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerME...

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N Channel 800V 10.5A 0.65ohm TO-247 Through Hole 10V 3.75V 190W 3Pins 150°C - -
ZVN4206AV
ZVN4206AV - Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, E-Line, Through Hole

SC06967

Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, E-Line, Through Hole

DIODES INC.

The ZVN4206AV is a N-channel enhancement-mode Vertical DMOSFET with repetitive avalanche rating and no transient protection required. It is suitable for automotive relay drivers and stepper motor driver applications.

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N Channel 60V 600mA 1.5ohm E-Line Through Hole 10V 3V 700mW 3Pins 150°C - -
IRFD9120PBF
IRFD9120PBF - Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole

SC07026

Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole

VISHAY

The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which...

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P Channel 100V 1A 0.6ohm DIP Through Hole 10V 4V 1.3W 4Pins 175°C - -
STP24NF10.
STP24NF10. - Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole

SC06020

Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 26A • Drain Source On State Resistance : 0.055ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 85W • No. of Pins : 3Pins • Operating Temperature Max : 175°C

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N Channel 100V 26A 0.055ohm TO-220 Through Hole 10V 3V 85W 3Pins 175°C - -
BSS123
BSS123 - Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount

SC06980

Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount

ONSEMI

The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...

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N Channel 100V 170mA 1.2ohm - Surface Mount 10V 1.7V 360mW 3Pins 150°C - -
IRF820PBF
IRF820PBF - Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole

SC11107

Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole

VISHAY

The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...

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N Channel 500V 2.5A 3ohm TO-220AB Through Hole 10V 4V 40W 3Pins 150°C - -
IRFZ34NPBF
IRFZ34NPBF - Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

SC08250

Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 55V 29A 0.04ohm - Through Hole 10V 4V 68W 3Pins 175°C - -
IRFP150N
IRFP150N - Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole

SC06218

Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole

INFINEON

• Channel Type : N Channel • Drain Source On State Resistance : 0.036ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Power Dissipation : 140W • No. of Pins : 3Pins

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N Channel - - 0.036ohm TO-247AC Through Hole - - 140W 3Pins - - -
FDD4685
FDD4685 - Power MOSFET, P Channel, 40 V, 32 A, 0.023 ohm, TO-252 (DPAK), Surface Mount

SC11194

Power MOSFET, P Channel, 40 V, 32 A, 0.023 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The FDD4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...

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P Channel 40V 32A 0.023ohm - Surface Mount 10V 1.6V 69W 3Pins 150°C - -
IRF540NPBF
IRF540NPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole

SC08216

Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole

INFINEON

The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device...

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N Channel 100V 33A 0.044ohm - Through Hole 10V 4V 130W 3Pins 175°C HEXFET Series -
IRFP460
IRFP460 - Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole

SC06074

Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 20A • Drain Source On State Resistance : 0.27ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 250W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 500V 20A 0.27ohm TO-247AC Through Hole 10V 2V 250W 3Pins 150°C - -
IRLML5203PBF
IRLML5203PBF - Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount

SC07008

Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount

INFINEON

The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to...

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P Channel 30V 3A 0.098ohm SOT-23 Surface Mount 10V 2.5V 1.25W 3Pins 150°C - -
STN2NF10
STN2NF10 - Power MOSFET, N Channel, 100 V, 2 A, 0.23 ohm, SOT-223, Surface Mount

SC11058

Power MOSFET, N Channel, 100 V, 2 A, 0.23 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps t...

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N Channel 100V 2A 0.23ohm SOT-223 Surface Mount 10V 4V 3.3W 4Pins 150°C - -
IRF840APBF
IRF840APBF - Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

SC11081

Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

VISHAY

The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness. • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • ±30V Gate-source voltage

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N Channel 500V 8A 0.85ohm TO-220AB Through Hole 10V 4V 125W 3Pins 150°C - -
SPA11N80C3
SPA11N80C3 - Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

SC11117

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

INFINEON

The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 800V 11A 0.39ohm TO-220FP Through Hole 10V 3V 41W 3Pins 150°C - -
ZVP2106A
ZVP2106A - Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole

SC06973

Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current. • ±20V Gate Source Voltage

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P Channel 60V 280mA 4ohm TO-226AA Through Hole 10V 3.5V 700mW 3Pins 150°C - -
IRLML2502PBF
IRLML2502PBF - Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount

SC06987

Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to p...

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N Channel 20V 4.2A 0.045ohm SOT-23 Surface Mount 4.5V 1.2V 1.25W 3Pins 150°C - -
FQP3N80C
FQP3N80C - Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole

SC11099

Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole

ONSEMI

The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and with...

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N Channel 800V 3A 4ohm TO-220 Through Hole 10V 5V 107W 3Pins 150°C - -
ZVP4424G
ZVP4424G - Power MOSFET, P Channel, 240 V, 480 mA, 11 ohm, SOT-223, Surface Mount

SC11059

Power MOSFET, P Channel, 240 V, 480 mA, 11 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVP4424G is a P-channel enhancement-mode Vertical DMOSFET with moulded plastic case and matte tin finish terminals. It is suitable for electronic hook switches and battery powered equipment applications. • Low threshold and fast switching • Halogen-fre...

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P Channel 240V 480mA 11ohm SOT-223 Surface Mount 10V 1.4V 2.5W 4Pins 150°C - -
BSS138....
BSS138.... - MOSFET, N, SOT23

SC06981

MOSFET, N, SOT23

ONSEMI

• Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.3V • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 50V 220mA - SOT-23 - 10V 1.3V - 3Pins 150°C - -
IRLU024NPBF
IRLU024NPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

SC11074

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel 55V 17A 0.065ohm - Through Hole 10V 2V 46W 3Pins 175°C - -
IRF830APBF
IRF830APBF - Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

SC11087

Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

VISHAY

The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...

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N Channel 500V 5A 1.4ohm TO-220AB Through Hole 10V 4.5V 74W 3Pins 150°C - -
SPA20N60C3
SPA20N60C3 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

SC11115

Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

INFINEON

The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 650V 20.7A 0.16ohm TO-220AB Through Hole 10V 3V 34.5W 3Pins 150°C - -
IRF630.
IRF630. - Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

SCIRF630

Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.4ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 100W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 200V 10A 0.4ohm TO-220 Through Hole 10V 3V 100W 3Pins 150°C - -