Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5305PBF
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SC08218 |
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole INFINEON The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 31A | 0.06ohm | - | Through Hole | 10V | 4V | 110W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW12NK80Z.
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SC06406 |
Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerME...
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N Channel | 800V | 10.5A | 0.65ohm | TO-247 | Through Hole | 10V | 3.75V | 190W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZVN4206AV
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SC06967 |
Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, E-Line, Through Hole DIODES INC. The ZVN4206AV is a N-channel enhancement-mode Vertical DMOSFET with repetitive avalanche rating and no transient protection required. It is suitable for automotive relay drivers and stepper motor driver applications.
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N Channel | 60V | 600mA | 1.5ohm | E-Line | Through Hole | 10V | 3V | 700mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFD9120PBF
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SC07026 |
Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole VISHAY The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which...
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P Channel | 100V | 1A | 0.6ohm | DIP | Through Hole | 10V | 4V | 1.3W | 4Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP24NF10.
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SC06020 |
Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 26A • Drain Source On State Resistance : 0.055ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 85W • No. of Pins : 3Pins • Operating Temperature Max : 175°C
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N Channel | 100V | 26A | 0.055ohm | TO-220 | Through Hole | 10V | 3V | 85W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123
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SC06980 |
Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...
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N Channel | 100V | 170mA | 1.2ohm | - | Surface Mount | 10V | 1.7V | 360mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF820PBF
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SC11107 |
Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 500V | 2.5A | 3ohm | TO-220AB | Through Hole | 10V | 4V | 40W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ34NPBF
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SC08250 |
Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole INFINEON The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 55V | 29A | 0.04ohm | - | Through Hole | 10V | 4V | 68W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP150N
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SC06218 |
Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole INFINEON • Channel Type : N Channel • Drain Source On State Resistance : 0.036ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Power Dissipation : 140W • No. of Pins : 3Pins
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N Channel | - | - | 0.036ohm | TO-247AC | Through Hole | - | - | 140W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD4685
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SC11194 |
Power MOSFET, P Channel, 40 V, 32 A, 0.023 ohm, TO-252 (DPAK), Surface Mount ONSEMI The FDD4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...
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P Channel | 40V | 32A | 0.023ohm | - | Surface Mount | 10V | 1.6V | 69W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NPBF
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SC08216 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole INFINEON The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device...
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N Channel | 100V | 33A | 0.044ohm | - | Through Hole | 10V | 4V | 130W | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460
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SC06074 |
Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 20A • Drain Source On State Resistance : 0.27ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 250W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 20A | 0.27ohm | TO-247AC | Through Hole | 10V | 2V | 250W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML5203PBF
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SC07008 |
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount INFINEON The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to...
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P Channel | 30V | 3A | 0.098ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN2NF10
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SC11058 |
Power MOSFET, N Channel, 100 V, 2 A, 0.23 ohm, SOT-223, Surface Mount STMICROELECTRONICS The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps t...
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N Channel | 100V | 2A | 0.23ohm | SOT-223 | Surface Mount | 10V | 4V | 3.3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF840APBF
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SC11081 |
Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole VISHAY The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness. • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • ±30V Gate-source voltage
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N Channel | 500V | 8A | 0.85ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPA11N80C3
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SC11117 |
Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole INFINEON The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 800V | 11A | 0.39ohm | TO-220FP | Through Hole | 10V | 3V | 41W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP2106A
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SC06973 |
Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current. • ±20V Gate Source Voltage
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P Channel | 60V | 280mA | 4ohm | TO-226AA | Through Hole | 10V | 3.5V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2502PBF
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SC06987 |
Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount INFINEON The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to p...
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N Channel | 20V | 4.2A | 0.045ohm | SOT-23 | Surface Mount | 4.5V | 1.2V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP3N80C
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SC11099 |
Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole ONSEMI The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and with...
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N Channel | 800V | 3A | 4ohm | TO-220 | Through Hole | 10V | 5V | 107W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP4424G
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SC11059 |
Power MOSFET, P Channel, 240 V, 480 mA, 11 ohm, SOT-223, Surface Mount DIODES INC. The ZVP4424G is a P-channel enhancement-mode Vertical DMOSFET with moulded plastic case and matte tin finish terminals. It is suitable for electronic hook switches and battery powered equipment applications. • Low threshold and fast switching • Halogen-fre...
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P Channel | 240V | 480mA | 11ohm | SOT-223 | Surface Mount | 10V | 1.4V | 2.5W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138....
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SC06981 |
MOSFET, N, SOT23 ONSEMI • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.3V • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 50V | 220mA | - | SOT-23 | - | 10V | 1.3V | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLU024NPBF
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SC11074 |
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole INFINEON The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...
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N Channel | 55V | 17A | 0.065ohm | - | Through Hole | 10V | 2V | 46W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830APBF
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SC11087 |
Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole VISHAY The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...
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N Channel | 500V | 5A | 1.4ohm | TO-220AB | Through Hole | 10V | 4.5V | 74W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPA20N60C3
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SC11115 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole INFINEON The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 20.7A | 0.16ohm | TO-220AB | Through Hole | 10V | 3V | 34.5W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF630.
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SCIRF630 |
Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.4ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 100W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 200V | 10A | 0.4ohm | TO-220 | Through Hole | 10V | 3V | 100W | 3Pins | 150°C | - | - |