MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4306A
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SC06968 |
Power MOSFET, N Channel, 60 V, 1.1 A, 0.33 ohm, TO-226AA, Through Hole DIODES INC. ZVN4306A is a N-channel enhancement mode vertical DMOS FET. It is ideal for DC – DC converters. • Drain-source voltage is 60V at TA = 25°C • Gate-source voltage is ±20V at TA = 25°C • Continuous drain current is 1.1A at TA = 25°C • Practical continuous dra...
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N Channel | 60V | 1.1A | 0.33ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002
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SC11027 |
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount ONSEMI The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...
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N Channel | 60V | 115mA | 7.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP240PBF
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SC10643 |
Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole VISHAY The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 20A | 0.18ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW10NK80Z.
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SC06405 |
Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm
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N Channel | 800V | 9A | 0.78ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4321PBF
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SC11179 |
Power MOSFET, N Channel, 150 V, 78 A, 0.0155 ohm, TO-247AC, Through Hole INFINEON The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...
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N Channel | 150V | 78A | 0.0155ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK60Z
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SC06449 |
Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-247, Through Hole STMICROELECTRONICS The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...
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N Channel | 600V | 10A | 0.75ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU014PBF
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SC11070 |
Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole VISHAY The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissi...
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N Channel | 60V | 8.4A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830PBF
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SC11101 |
Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...
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N Channel | 500V | 4.5A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP264PBF
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SC11174 |
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole VISHAY The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...
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N Channel | 250V | 38A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250NPBF
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SC11079 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 30A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4368PBF
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SC11167 |
Power MOSFET, N Channel, 75 V, 350 A, 0.00185 ohm, TO-247AC, Through Hole INFINEON The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 350A | 0.00185ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA24N60.
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SC06316 |
Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 23.5A • Drain Source On State Resistance : 0.24ohm
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N Channel | 600V | 23.5A | 0.24ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84
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SC11030 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The BSS84 is P channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while provide rugged, reliable and fast switching performance thus BSS84 are suited for low voltage, low...
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P Channel | 50V | 130mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP60R099CP
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SC11112 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole INFINEON The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 31A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF4905PBF
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SC11119 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole INFINEON The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 74A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP27P06
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SC08209 |
Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole ONSEMI The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...
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P Channel | 60V | 27A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310A
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SC06965 |
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
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N Channel | 100V | 200mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS7002A
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SC06992 |
Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount ONSEMI The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...
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N Channel | 60V | 280mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44NPBF
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SC08251 |
Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole INFINEON The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 55V | 41A | 0.0175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPD04N80C3
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SC11153 |
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm
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N Channel | 800V | 4A | 1.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9620
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SCIRF9620 |
Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm
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P Channel | 200V | 3.5A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP36NF06L
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SC11127 |
Power MOSFET, N Channel, 60 V, 30 A, 0.04 ohm, TO-220, Through Hole STMICROELECTRONICS • N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application
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N Channel | 60V | 30A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP0545A
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SC06972 |
Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole DIODES INC. The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.
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P Channel | 450V | 45mA | 150ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A18K
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SC11200 |
Power MOSFET, P Channel, 60 V, 10.4 A, 0.055 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP6A18K is a -60V P-channel Enhancement Mode MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applicati...
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P Channel | 60V | 10.4A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN335N
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SC06983 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount ONSEMI The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate threshold voltage • Hi...
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N Channel | 20V | 1.7A | 0.07ohm |