MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4306A
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SC06968 |
Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4306A is a 60V E-Line N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals. The MOSFET is ideal for DC/DC convertors and solenoids/relay drivers for automotive. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0...
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N Channel | 60V | 1.1A | 0.45ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002
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SC11027 |
Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...
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N Channel | 60V | 115mA | 1.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP16NF06L..
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SC11129 |
Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole STMICROELECTRONICS The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...
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N Channel | 60V | 16A | 0.07ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9Z34NPBF
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SC11120 |
Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole INFINEON The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
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P Channel | 55V | 17A | 0.1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9110PBF
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SC11203 |
Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount VISHAY The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave sol...
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1+ £0.77 (£0.92) 25+ £0.60 (£0.72) |
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P Channel | 100V | 3.1A | 1.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK60Z
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SC06449 |
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...
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N Channel | 600V | 10A | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU014PBF
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SC11070 |
Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole VISHAY The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissi...
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N Channel | 60V | 8.4A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830PBF
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SC11101 |
Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...
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N Channel | 500V | 4.5A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP264PBF
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SC11174 |
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole VISHAY The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...
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N Channel | 250V | 38A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNB35N07TR-E
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SC11022 |
Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount STMICROELECTRONICS The VNB35N07TR-E is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clam...
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N Channel | 80V | 18A | 0.028ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRL540NPBF
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SC11124 |
Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole INFINEON The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 100V | 36A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK40Z
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SC11110 |
Power MOSFET, N Channel, 400 V, 9 A, 0.55 ohm, TO-220, Through Hole STMICROELECTRONICS The STP11NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure ...
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1+ £0.61 (£0.73) 25+ £0.59 (£0.71) |
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N Channel | 400V | 9A | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP7NK40Z
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SC08224 |
Power MOSFET, N Channel, 400 V, 5.4 A, 1 ohm, TO-220, Through Hole STMICROELECTRONICS The STP7NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a...
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N Channel | 400V | 5.4A | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF4905PBF
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SC11119 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole INFINEON The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 74A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP60R099CP
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SC11112 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole INFINEON The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 31A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP27P06
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SC08209 |
Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole ONSEMI The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...
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P Channel | 60V | 27A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310A
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SC06965 |
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
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N Channel | 100V | 200mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS7002A
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SC06992 |
Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount ONSEMI The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...
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N Channel | 60V | 280mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44NPBF
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SC08251 |
Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole INFINEON The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 55V | 41A | 0.0175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPD04N80C3
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SC11153 |
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm
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N Channel | 800V | 4A | 1.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9620
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SCIRF9620 |
Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm
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P Channel | 200V | 3.5A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP36NF06L
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SC11127 |
Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole STMICROELECTRONICS • N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application
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N Channel | 60V | 30A | 0.032ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP0545A
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SC06972 |
Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole DIODES INC. The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.
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P Channel | 450V | 45mA | 150ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN0545A
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SC06961 |
Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole DIODES INC. The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.
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N Channel | 450V | 90mA | 50ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP22N50APBF
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SC11094 |
Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole VISHAY The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current
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N Channel | 500V | 22A | 0.23ohm |