MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN0545A
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SC06961 |
Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole DIODES INC. The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.
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N Channel | 450V | 90mA | 50ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP22N50APBF
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SC11094 |
Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole VISHAY The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current
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N Channel | 500V | 22A | 0.23ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDT2955
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SC11042 |
Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount ONSEMI The NDT2955 is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using high voltage trench process and suitable for power management applications. • High density cell design for extremely lo...
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P Channel | 60V | 2.5A | 0.3ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLZ34NPBF
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SC11125 |
Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole INFINEON The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 55V | 27A | 0.035ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZVN4206A
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SC06966 |
Power MOSFET, N Channel, 60 V, 600 mA, 1 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4206A is a 60V E-Line N-channel Enhancement Mode Vertical DMOS FET with 1Ω resistance and 700mW power dissipation.
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N Channel | 60V | 600mA | 1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF610PBF
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SC11106 |
Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 200V | 3.3A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP2106A
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SC06973 |
Power MOSFET, P Channel, 60 V, 280 mA, 5 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current. • ±20V Gate Source Voltage
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P Channel | 60V | 280mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2502PBF
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SC06987 |
Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount INFINEON The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to p...
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N Channel | 20V | 4.2A | 0.045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP3N80C
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SC11099 |
Power MOSFET, N Channel, 800 V, 3 A, 4.8 ohm, TO-220, Through Hole ONSEMI The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and with...
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N Channel | 800V | 3A | 4.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF840APBF
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SC11081 |
Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole VISHAY The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness. • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • ±30V Gate-source voltage
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N Channel | 500V | 8A | 0.85ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPA11N80C3
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SC11117 |
Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole INFINEON The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 800V | 11A | 0.39ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830APBF
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SC11087 |
Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole VISHAY The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...
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N Channel | 500V | 5A | 1.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPA20N60C3
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SC11115 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole INFINEON The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 20.7A | 0.16ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138....
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SC06981 |
MOSFET, N, SOT23 ONSEMI • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA
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- | 50V | 220mA | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLU024NPBF
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SC11074 |
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole INFINEON The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...
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N Channel | 55V | 17A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF630.
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SCIRF630 |
Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.4ohm
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N Channel | 200V | 10A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN357N
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SC11040 |
Power MOSFET, N Channel, 30 V, 2.5 A, 0.06 ohm, SOT-23, Surface Mount ONSEMI The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...
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N Channel | 30V | 2.5A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDT3055L
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SC11043 |
Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount ONSEMI The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand hig...
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N Channel | 60V | 4A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP9NK50ZFP
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SC13028 |
Power MOSFET, N Channel, 500 V, 7.2 A, 0.85 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP9NK50ZFP is a 500V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 500V | 7.2A | 0.85ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP450APBF
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SC10645 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450APBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dy...
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N Channel | 500V | 14A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3710PBF
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SC11104 |
Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole INFINEON The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...
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N Channel | 100V | 46A | 0.023ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDT452AP
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SC11045 |
Power MOSFET, P Channel, 30 V, 5 A, 0.065 ohm, SOT-223, Surface Mount ONSEMI The NDT452AP is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performanc...
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P Channel | 30V | 5A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP40NF10
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SC11103 |
Power MOSFET, N Channel, 100 V, 50 A, 0.025 ohm, TO-220, Through Hole STMICROELECTRONICS The STP40NF10 is a N-channel low gate charge STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alig...
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N Channel | 100V | 50A | 0.025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN359AN
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SC06985 |
Power MOSFET, N Channel, 30 V, 2.7 A, 0.046 ohm, SOT-23, Surface Mount ONSEMI The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and batter...
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N Channel | 30V | 2.7A | 0.046ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP4A16K
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SC11204 |
Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP4A16K is a new generation Trench P-channel enhancement-mode MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes it ideal for high efficiency and low voltage applications....
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P Channel | 40V | 9.9A | 0.06ohm |