MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW12NK80Z.
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SC06406 |
Power MOSFET, N Channel, 800 V, 10.5 A, 0.75 ohm, TO-247, Through Hole STMICROELECTRONICS The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerME...
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N Channel | 800V | 10.5A | 0.75ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZVN4206AV
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SC06967 |
Power MOSFET, N Channel, 60 V, 600 mA, 1 ohm, E-Line, Through Hole DIODES INC. The ZVN4206AV is a N-channel enhancement-mode Vertical DMOSFET with repetitive avalanche rating and no transient protection required. It is suitable for automotive relay drivers and stepper motor driver applications.
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N Channel | 60V | 600mA | 1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFD9120PBF
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SC07026 |
Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole VISHAY The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which...
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P Channel | 100V | 1A | 0.6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP24NF10.
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SC06020 |
Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 26A • Drain Source On State Resistance : 0.055ohm
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N Channel | 100V | 26A | 0.055ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS123
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SC06980 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount ONSEMI The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...
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N Channel | 100V | 170mA | 6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF820PBF
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SC11107 |
Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 500V | 2.5A | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ34NPBF
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SC08250 |
Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole INFINEON The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 55V | 29A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP150N
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SC06218 |
Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole INFINEON • Channel Type : N Channel • Drain Source On State Resistance : 0.036ohm
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N Channel | - | - | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD4685
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SC11194 |
Power MOSFET, P Channel, 40 V, 32 A, 0.027 ohm, TO-252 (DPAK), Surface Mount ONSEMI The FDD4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...
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P Channel | 40V | 32A | 0.027ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NPBF
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SC08216 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole INFINEON The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device...
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N Channel | 100V | 33A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460
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SC06074 |
Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 20A • Drain Source On State Resistance : 0.27ohm
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N Channel | 500V | 20A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML5203PBF
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SC07008 |
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount INFINEON The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to...
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P Channel | 30V | 3A | 0.098ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN2NF10
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SC11058 |
Power MOSFET, N Channel, 100 V, 2 A, 0.26 ohm, SOT-223, Surface Mount STMICROELECTRONICS The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps t...
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N Channel | 100V | 2A | 0.26ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP4424G
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SC11059 |
Power MOSFET, P Channel, 240 V, 480 mA, 9 ohm, SOT-223, Surface Mount DIODES INC. The ZVP4424G is a P-channel enhancement-mode Vertical DMOSFET with moulded plastic case and matte tin finish terminals. It is suitable for electronic hook switches and battery powered equipment applications. • Low threshold and fast switching • Halogen-fre...
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P Channel | 240V | 480mA | 9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNB35N07TR-E
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SC11022 |
Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount STMICROELECTRONICS The VNB35N07TR-E is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clam...
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N Channel | 80V | 18A | 0.028ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRL540NPBF
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SC11124 |
Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole INFINEON The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 100V | 36A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK40Z
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SC11110 |
Power MOSFET, N Channel, 400 V, 9 A, 0.55 ohm, TO-220, Through Hole STMICROELECTRONICS The STP11NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure ...
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N Channel | 400V | 9A | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP7NK40Z
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SC08224 |
Power MOSFET, N Channel, 400 V, 5.4 A, 1 ohm, TO-220, Through Hole STMICROELECTRONICS The STP7NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a...
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N Channel | 400V | 5.4A | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9640PBF
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SC08142 |
Power MOSFET, P Channel, 200 V, 11 A, 0.5 ohm, TO-220AB, Through Hole VISHAY The IRF9640PBF is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...
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P Channel | 200V | 11A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRL510PBF
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SC11134 |
Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole VISHAY Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dot rating • Repetitive avalanche rated • Logic-level gate drive • 175°C operat...
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N Channel | 100V | 5.6A | 0.54ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN358P
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SC07005 |
Power MOSFET, P Channel, 30 V, 1.6 A, 0.125 ohm, SOT-23, Surface Mount ONSEMI The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...
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P Channel | 30V | 1.6A | 0.125ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP12N10L
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SC11126 |
Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole ONSEMI The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...
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N Channel | 100V | 12A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN337N
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SC06984 |
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount ONSEMI The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...
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N Channel | 30V | 2.2A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNP10N07-E
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SC11011 |
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole STMICROELECTRONICS The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...
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N Channel | 70V | 10A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540ZPBF
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SC11108 |
Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole INFINEON The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 100V | 36A | 0.0265ohm |