MOSFET Transistors

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IRLML6402PBF
IRLML6402PBF - Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount

SC07010

Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6402PBF from International Rectifier is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to ...

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P Channel 20V 3.7A 0.065ohm
IRLU120NPBF
IRLU120NPBF - Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-251AA, Through Hole

SC11073

Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-251AA, Through Hole

INFINEON

The IRLU120NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated ...

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N Channel - - 0.185ohm
BSS84P
BSS84P - Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount

SC07003

Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount

INFINEON

• Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170mA • Drain Source On State Resistance : 8ohm

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P Channel 60V 170mA 8ohm
FQP12N60C
FQP12N60C - Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

SC11098

Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

ONSEMI

The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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N Channel 600V 12A 0.53ohm
IPB60R099CP
IPB60R099CP - Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

SC11156

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 650V • Continuous Drain Current Id : 31A • Drain Source On State Resistance : 0.09ohm

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N Channel 650V 31A 0.09ohm
IRFP32N50KPBF
IRFP32N50KPBF - Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole

SC11173

Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole

VISHAY

The IRFP32N50KPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...

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N Channel 500V 32A 0.16ohm
IRF840PBF
IRF840PBF - Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

SC11102

Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

VISHAY

The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial...

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N Channel 500V 8A 0.85ohm
STP30NF10
STP30NF10 - Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole

SC08226

Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP30NF10 is a 100V N-channel Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignm...

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N Channel 100V 35A 0.045ohm
STP60NF06
STP60NF06 - Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole

SC08254

Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...

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N Channel 60V 60A 0.016ohm
IRFI830GPBF
IRFI830GPBF - Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole

SC11142

Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole

VISHAY

The IRFI830GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The mouldin...

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N Channel 500V 3.1A 1.5ohm
STP3NK60ZFP
STP3NK60ZFP - Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole

SC09919

Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 2.4A • Drain Source On State Resistance : 3.3ohm

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N Channel 600V 2.4A 3.3ohm
RFP70N06
RFP70N06 - Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole

SC08223

Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole

ONSEMI

The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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N Channel 60V 70A 0.014ohm
MMBF170
MMBF170 - Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

SC06989

Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switch...

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N Channel 60V 500mA 5ohm
ZVN4106F
ZVN4106F - Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount

SC07002

Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammability rating

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N Channel 60V 200mA 2.5ohm
FQP17P06
FQP17P06 - Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole

SC08206

Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole

ONSEMI

The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...

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P Channel 60V 17A 0.12ohm
STW14NK50Z.
STW14NK50Z. - Power MOSFET, N Channel, 500 V, 14 A, 0.34 ohm, TO-247, Through Hole

SC06408

Power MOSFET, N Channel, 500 V, 14 A, 0.34 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 14A • Drain Source On State Resistance : 0.34ohm

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N Channel 500V 14A 0.34ohm
IRFP064NPBF
IRFP064NPBF - Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm, TO-247AC, Through Hole

SC11166

Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm, TO-247AC, Through Hole

INFINEON

The IRFP064NPBF is utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the ...

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N Channel 55V 98A 0.008ohm
FDD4243
FDD4243 - Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount

SC11198

Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The FDD4243 is a P-channel MOSFET produced using PowerTrench® technology to deliver low RDS (ON) and optimized Bvdss capability to offer superior performance benefit in the applications. • High performance Trench technology for extremely low RDS (ON)

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P Channel 40V 14A 0.036ohm
IRF9520NPBF
IRF9520NPBF - Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole

SC08219

Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole

INFINEON

The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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P Channel - - 0.48ohm
STP12NM50
STP12NM50 - Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole

SC11151

Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...

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N Channel 550V 12A 0.35ohm
IRFP9240
IRFP9240 - Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole

SC06075

Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm

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P Channel 200V 12A 0.5ohm
IRFU5305PBF
IRFU5305PBF - Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole

SC11065

Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

• Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating

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P Channel 55V 22A 0.065ohm
IRLD024PBF
IRLD024PBF - Power MOSFET, N Channel, 60 V, 2.5 A, 0.1 ohm, DIP, Through Hole

SC07023

Power MOSFET, N Channel, 60 V, 2.5 A, 0.1 ohm, DIP, Through Hole

VISHAY

The IRLD024PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which ...

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N Channel 60V 2.5A 0.1ohm
STW10NK80Z.
STW10NK80Z. - Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

SC06405

Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm

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N Channel 800V 9A 0.78ohm
IRFP4321PBF
IRFP4321PBF - Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole

SC11179

Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...

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N Channel 150V 78A 0.012ohm