MOSFET Transistors

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2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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N Channel 60V 200mA 5ohm
NDS355AN
NDS355AN - Power MOSFET, N Channel, 30 V, 1.7 A, 0.085 ohm, SOT-23, Surface Mount

SC06991

Power MOSFET, N Channel, 30 V, 1.7 A, 0.085 ohm, SOT-23, Surface Mount

ONSEMI

The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...

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N Channel 30V 1.7A 0.085ohm
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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P Channel 100V 23A 0.117ohm
ZVP2110A
ZVP2110A - Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

SC06974

Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.

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P Channel 100V 230mA 8ohm
IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel 100V 36A 0.0265ohm
IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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P Channel 60V 8.8A 0.28ohm
IRLML2402PBF
IRLML2402PBF - Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

SC06986

Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...

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N Channel 20V 1.2A 0.25ohm
STP60NF06L
STP60NF06L - Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

SC11131

Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...

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N Channel 60V 60A 0.014ohm
ZVN3310F
ZVN3310F - Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

SC07001

Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...

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N Channel 100V 100mA 10ohm
IRF2907ZPBF
IRF2907ZPBF - Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

SC08253

Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

INFINEON

The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...

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N Channel - - 0.0045ohm
IRF3415PBF
IRF3415PBF - Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

SC11109

Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

INFINEON

The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...

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N Channel 150V 37A 0.042ohm
IRF3205ZPBF
IRF3205ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

SC11149

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...

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N Channel 55V 110A 0.0065ohm
SPW17N80C3
SPW17N80C3 - Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

SC11162

Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

INFINEON

The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature

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N Channel 800V 17A 0.29ohm
HUF75339P3
HUF75339P3 - Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

SC12748

Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

ONSEMI

The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...

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N Channel 55V 75A 0.012ohm
IRF9520PBF
IRF9520PBF - Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

SC11123

Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

VISHAY

The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...

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P Channel 100V 6A 0.6ohm
ZVP3306A
ZVP3306A - Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

SC06975

Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

DIODES INC.

ZVP3306A is a P-channel enhancement mode vertical DMOS FET. • Drain-source voltage is -60V • Continuous drain current at Tamb=25°C is -160mA • Pulsed drain current is -1.6A • Gate-source voltage is ±20V • Power dissipation at Tamb=25°C is 625mW • Drain-sou...

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P Channel 60V 160mA 14ohm
IRF9Z24NPBF
IRF9Z24NPBF - Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

SC11122

Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 12A 0.175ohm
ZVN4424A
ZVN4424A - Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

SC06970

Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.

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N Channel 240V 260mA 6ohm
ZVP4424A
ZVP4424A - Power MOSFET, P Channel, 240 V, 200 mA, 9 ohm, TO-226AA, Through Hole

SC06977

Power MOSFET, P Channel, 240 V, 200 mA, 9 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold

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P Channel 240V 200mA 9ohm
IRF9530NPBF
IRF9530NPBF - Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

SC08220

Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...

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P Channel 100V 13A 0.2ohm
RFP50N06
RFP50N06 - Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

SC08222

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

ONSEMI

The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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N Channel 60V 50A 0.022ohm
IRFU9024NPBF
IRFU9024NPBF - Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

SC11062

Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

INFINEON

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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P Channel 55V 11A 0.175ohm
IRF530NPBF
IRF530NPBF - Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

SC08215

Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

INFINEON

The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...

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N Channel 100V 17A 0.09ohm
STW20NK50Z.
STW20NK50Z. - Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole

SC06409

Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 17A • Drain Source On State Resistance : 0.23ohm

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N Channel 500V 17A 0.23ohm
ZVN2106A
ZVN2106A - Power MOSFET, N Channel, 60 V, 450 mA, 2 ohm, TO-226AA, Through Hole

SC06962

Power MOSFET, N Channel, 60 V, 450 mA, 2 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN2106A is a N-channel enhancement mode MOSFET with 8A pulsed drain current. • ±20V Gate Source Voltage

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N Channel 60V 450mA 2ohm