MOSFET Transistors

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IRF1404ZPBF
IRF1404ZPBF - Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole

SC16968

Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole

INFINEON

The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel 40V 190A 0.0037ohm
IRLML6244TRPBF
IRLML6244TRPBF - Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount

SC16790

Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6244TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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N Channel 20V 6.3A 0.021ohm
SUM110P06-07L-E3
SUM110P06-07L-E3 - Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount

SC16897

Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount

VISHAY

The SUM110P06-07L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 40°C/W Junction-to-ambient thermal resistance • 0.4°C/W Junction-to-case thermal resistance

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P Channel 60V 110A 0.0055ohm
SI2312BDS-T1-E3
SI2312BDS-T1-E3 - Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount

SC16834

Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount

VISHAY

The SI2312BDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • 100% Rg tested • -55 to 150°C Operating temperature range

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N Channel 20V 3.9A 0.025ohm
BSS131H6327XTSA1
BSS131H6327XTSA1 - Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount

SC16714

Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount

INFINEON

The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device

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N Channel 240V 110mA 7.7ohm
IRFP450PBF
IRFP450PBF - Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

SC17006

Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

VISHAY

The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 500V 14A 0.4ohm
2N7002-7-F
2N7002-7-F - Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

SC15986

Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

DIODES INC.

The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...

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N Channel 60V 210mA 13.5ohm
BS250P
BS250P - P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

SC16888

P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

DIODES INC.

BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...

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P Channel 45V 230mA 14ohm
IRFP460APBF
IRFP460APBF - N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

SC16962

N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

VISHAY

• Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)

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N Channel 500V 20A 0.27ohm
IRFB7430PBF
IRFB7430PBF - Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole

SC16945

Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole

INFINEON

Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...

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N Channel 40V 195A 0.001ohm
2N7002WT1G
2N7002WT1G - Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount

SC16709

Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount

ONSEMI

The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...

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N Channel 60V 340mA 1.19ohm
STP20NM50
STP20NM50 - Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole

SC16982

Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...

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N Channel 550V 20A 0.25ohm
SQ2361ES-T1_GE3
SQ2361ES-T1_GE3 - Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD

SC15964

Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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P Channel 60V 2.8A 0.13ohm
IRLR7843TRPBF
IRLR7843TRPBF - Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount

SC17008

Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount

INFINEON

The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...

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N Channel 30V 161A 0.0026ohm
PMV32UP,215
PMV32UP,215 - Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount

SC16848

Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...

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P Channel 20V 4A 0.032ohm
NX3008PBK,215
NX3008PBK,215 - Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount

SC16776

Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount

NEXPERIA

The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...

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P Channel 30V 230mA 2.8ohm
BSS123-7-F
BSS123-7-F - Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

SC16705

Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

DIODES INC.

The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...

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N Channel 100V 170mA 6ohm
VNP20N07-E
VNP20N07-E - Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

SC15832

Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

STMICROELECTRONICS

The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...

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N Channel 80V 10A 0.05ohm
BSP318SH6327XTSA1
BSP318SH6327XTSA1 - Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

SC16992

Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

INFINEON

• 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101

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N Channel 60V 2.6A 0.07ohm
BSS123L
BSS123L - Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

SC16764

Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

ONSEMI

The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...

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N Channel 100V 170mA 2.98ohm
BSS316NH6327XTSA1
BSS316NH6327XTSA1 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

SC16768

Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

INFINEON

The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free

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N Channel 30V 1.4A 0.119ohm
SI2309CDS-T1-GE3
SI2309CDS-T1-GE3 - Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

SC16750

Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

VISHAY

The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free

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P Channel 60V 1.6A 0.285ohm
IRF7342TRPBF
IRF7342TRPBF - Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD

SC16807

Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD

INFINEON

The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...

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P Channel - - -
BSS138PS,115
BSS138PS,115 - Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD

SC15997

Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD

NEXPERIA

The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...

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N Channel - - -
STW4N150
STW4N150 - Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247,

SC15828

Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247,

STMICROELECTRONICS

The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...

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N Channel 1.5kV 4A 7ohm