MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1404ZPBF
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SC16968 |
Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole INFINEON The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 40V | 190A | 0.0037ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML6244TRPBF
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SC16790 |
Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount INFINEON The IRLML6244TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 20V | 6.3A | 0.021ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUM110P06-07L-E3
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SC16897 |
Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P06-07L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 40°C/W Junction-to-ambient thermal resistance • 0.4°C/W Junction-to-case thermal resistance
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P Channel | 60V | 110A | 0.0055ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2312BDS-T1-E3
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SC16834 |
Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount VISHAY The SI2312BDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • 100% Rg tested • -55 to 150°C Operating temperature range
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N Channel | 20V | 3.9A | 0.025ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS131H6327XTSA1
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SC16714 |
Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount INFINEON The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device
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N Channel | 240V | 110mA | 7.7ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP450PBF
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SC17006 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 500V | 14A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002-7-F
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SC15986 |
Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD DIODES INC. The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...
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N Channel | 60V | 210mA | 13.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS250P
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SC16888 |
P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line DIODES INC. BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...
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P Channel | 45V | 230mA | 14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460APBF
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SC16962 |
N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC VISHAY • Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)
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N Channel | 500V | 20A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB7430PBF
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SC16945 |
Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole INFINEON Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...
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N Channel | 40V | 195A | 0.001ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002WT1G
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SC16709 |
Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount ONSEMI The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...
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N Channel | 60V | 340mA | 1.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP20NM50
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SC16982 |
Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole STMICROELECTRONICS The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...
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N Channel | 550V | 20A | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2361ES-T1_GE3
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SC15964 |
Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 2.8A | 0.13ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR7843TRPBF
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SC17008 |
Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount INFINEON The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...
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N Channel | 30V | 161A | 0.0026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV32UP,215
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SC16848 |
Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount NEXPERIA The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...
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P Channel | 20V | 4A | 0.032ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008PBK,215
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SC16776 |
Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount NEXPERIA The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...
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P Channel | 30V | 230mA | 2.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123-7-F
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SC16705 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...
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N Channel | 100V | 170mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNP20N07-E
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SC15832 |
Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220 STMICROELECTRONICS The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...
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N Channel | 80V | 10A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP318SH6327XTSA1
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SC16992 |
Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount INFINEON • 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101
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N Channel | 60V | 2.6A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123L
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SC16764 |
Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount ONSEMI The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...
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N Channel | 100V | 170mA | 2.98ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS316NH6327XTSA1
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SC16768 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount INFINEON The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free
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N Channel | 30V | 1.4A | 0.119ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2309CDS-T1-GE3
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SC16750 |
Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount VISHAY The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free
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P Channel | 60V | 1.6A | 0.285ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7342TRPBF
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SC16807 |
Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD INFINEON The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138PS,115
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SC15997 |
Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD NEXPERIA The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW4N150
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SC15828 |
Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247, STMICROELECTRONICS The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...
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N Channel | 1.5kV | 4A | 7ohm |