MOSFET Transistors

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STW45NM50
STW45NM50 - Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

SC15829

Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

STMICROELECTRONICS

The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...

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N Channel 550V 45A 0.1ohm
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3 - Power MOSFET, P Channel, 40 V, 7.2 A, 0.045 ohm, SOIC, Surface Mount

SC16775

Power MOSFET, P Channel, 40 V, 7.2 A, 0.045 ohm, SOIC, Surface Mount

VISHAY

• 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package • 100% Rg tested • 100 % UIS tested • Suitable for load switches, adaptor switch and notebook PCs

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P Channel 40V 7.2A 0.045ohm
NDS332P
NDS332P - Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

SC16872

Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS332P is a P-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage application...

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P Channel 20V 1A 0.3ohm
IRLML5103TRPBF
IRLML5103TRPBF - Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

SC16784

Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

INFINEON

The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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P Channel 30V 600mA 0.6ohm
TN0702N3-G
TN0702N3-G - N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

SC17007

N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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N Channel 20V 530mA 1.3ohm
NTF2955T1G
NTF2955T1G - SMD P Channel Power MOSFET,  60V, 2.6A, 0.17 Ohm, SOT-223

SC16880

SMD P Channel Power MOSFET, 60V, 2.6A, 0.17 Ohm, SOT-223

ONSEMI

NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management. • Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A) • Gate-to-source voltage is ±20V (TJ = 25...

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P Channel 60V 2.6A 0.17ohm
STP4N150
STP4N150 - Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220

SC15827

Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220

STMICROELECTRONICS

• 1500V, 4A N-channel PowerMESH™ power MOSFET in 3 pin TO-220 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Strengthened layout with edge termination • Lowest RDS(on) per area, unrivalled gate charge, s...

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N Channel 1.5kV 4A 7ohm
VN10LF
VN10LF - SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

SC16910

SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

DIODES INC.

VN10LF is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 60V • Continuous drain current at Tamb=25°C is 150mA • Pulsed drain current is 3A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 330mW • Static drain sou...

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N Channel 60V 150mA 5ohm
FDN340P
FDN340P - Power MOSFET, P Channel, 20 V, 2 A, 0.07 ohm, SOT-23, Surface Mount

SC16814

Power MOSFET, P Channel, 20 V, 2 A, 0.07 ohm, SOT-23, Surface Mount

ONSEMI

The FDN340P is -20V single P channel 2.5V specified powerTrench MOSFET in SOT-23 package. This MOSFET is produced using PowerTrench process to minimize on state resistance and yet maintain low gate charge for superior switching performance. Applicable at p...

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P Channel 20V 2A 0.07ohm
IRF1010EPBF
IRF1010EPBF - Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB

SC17255

Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB

INFINEON

The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f...

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N Channel 60V 81A 0.012ohm
IRF5210PBF
IRF5210PBF - Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB

SC15831

Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB

INFINEON

The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. • Advanced Process Technology • New Ultra Low On-Resistance • Fast Switching • Dyn...

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P Channel 100V 40A 0.06ohm
BSS138BKS,115
BSS138BKS,115 - Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount

SC16799

Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount

NEXPERIA

The BSS138BKS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compat...

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N Channel - - -
SI2333DDS-T1-GE3
SI2333DDS-T1-GE3 - Power MOSFET, P Channel, 12 V, 6 A, 0.028 ohm, SOT-23, Surface Mount

SC16861

Power MOSFET, P Channel, 12 V, 6 A, 0.028 ohm, SOT-23, Surface Mount

VISHAY

The SI2333DDS-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free

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P Channel 12V 6A 0.028ohm
NTR2101PT1G
NTR2101PT1G - Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount

SC16911

Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount

ONSEMI

The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. • Leading Trench technology for low RDS (O...

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P Channel 8V 3.7A 0.052ohm
STW15NK90Z
STW15NK90Z - Power MOSFET, N Channel, 900 V, 9.5 A, 0.55 ohm, TO-247, Through Hole

SC16941

Power MOSFET, N Channel, 900 V, 9.5 A, 0.55 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW15NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is...

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N Channel 900V 9.5A 0.55ohm
BSH205G2R
BSH205G2R - Power MOSFET, P Channel, 20 V, 2 A, 0.17 ohm, TO-236AB, Surface Mount

SC16811

Power MOSFET, P Channel, 20 V, 2 A, 0.17 ohm, TO-236AB, Surface Mount

NEXPERIA

The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...

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P Channel 20V 2A 0.17ohm
DN2540N3-G
DN2540N3-G - Power MOSFET, N Channel, 400 V, 120 mA, 25 ohm, TO-92, Through Hole

SC16921

Power MOSFET, N Channel, 400 V, 120 mA, 25 ohm, TO-92, Through Hole

MICROCHIP

The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar t...

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N Channel 400V 120mA 25ohm
DMG6602SVT
DMG6602SVT - SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26

SC16690

SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26

DIODES INC.

DMG6602SVT is a complementary pair enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications....

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Complementary N and P Channel - - -
DMG1012T-7
DMG1012T-7 - Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD

SC16742

Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD

DIODES INC.

DMG1012T-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source v...

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N Channel 20V 630mA 0.4ohm
IRLML2060TRPBF
IRLML2060TRPBF - Power MOSFET, N Channel, 60 V, 1.2 A, 0.48 ohm, SOT-23, Surface Mount

SC16789

Power MOSFET, N Channel, 60 V, 1.2 A, 0.48 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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N Channel 60V 1.2A 0.48ohm
IRFPG50PBF
IRFPG50PBF - Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

SC16978

Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

VISHAY

The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...

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N Channel 1kV 6A 2ohm
BSH201,215
BSH201,215 - Power MOSFET, P Channel, 60 V, 160 mA, 2.5 ohm, SOT-23, Surface Mount

SC16756

Power MOSFET, P Channel, 60 V, 160 mA, 2.5 ohm, SOT-23, Surface Mount

NEXPERIA

The BSH201,215 is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...

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P Channel 60V 160mA 2.5ohm
NTR4003NT1G
NTR4003NT1G - Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount

SC16762

Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches. • Low gate voltage threshold VGS (th) to f...

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N Channel 30V 560mA 1.5ohm
FDC658AP
FDC658AP - Power MOSFET, P Channel, 30 V, 4 A, 0.05 ohm, SuperSOT, Surface Mount

SC16747

Power MOSFET, P Channel, 30 V, 4 A, 0.05 ohm, SuperSOT, Surface Mount

ONSEMI

The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications. • Low gate charge • High performance Trench technology...

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P Channel 30V 4A 0.05ohm
SUD50P10-43L-E3
SUD50P10-43L-E3 - Power MOSFET, P Channel, 100 V, 38 A, 0.043 ohm, TO-252AA, Surface Mount

SC16863

Power MOSFET, P Channel, 100 V, 38 A, 0.043 ohm, TO-252AA, Surface Mount

VISHAY

The SUD50P10-43L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage

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P Channel 100V 38A 0.043ohm