Npn Transistors
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Npn Transistors
Displaying products for Npn Transistors - from our range of leading brand manufacturers.
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC108C
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SC15810 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 200 mA, 600 mW, TO-18, Through Hole MULTICOMP PRO The BC108C is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...
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NPN | 25V | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 420hFE | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904
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SC10960 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 625 mW, TO-92, Through Hole ONSEMI The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....
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NPN | 40V | 200mA | 625mW | TO-92 | Through Hole | 3Pins | - | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904
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SC15978 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 1.5 W, TO-92, Through Hole MULTICOMP PRO The 2N3904 from Multicomp Pro is a through hole, NPN silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence is suitable for switching and amplification. • Co...
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NPN | 40V | 200mA | 1.5W | TO-92 | Through Hole | 3Pins | 300MHz | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC547B
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SC08525 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 1.5 W, TO-92, Through Hole ONSEMI The BC547B is a through hole, NPN epitaxial silicon transistor in TO-92 package. This device is designed for switching and amplification. • Collector to emitter breakdown voltage of 45V • Collector to emitter saturation voltage of 250mV • Power dissipation...
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NPN | 45V | 100mA | 1.5W | - | Through Hole | 3Pins | 300MHz | 200hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3704.
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SC06650 |
Bipolar (BJT) Single Transistor, NPN, 30 V, 999 A, TO-92, Through Hole MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 999A • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • No. of Pins : 3Pins
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NPN | 30V | 999A | - | TO-92 | Through Hole | 3Pins | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33725TA
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SC13989 |
Transistor, Bipolar, NPN, 45V, TO92 ONSEMI The BC33725TA is a NPN Epitaxial Silicon Transistor, designed for use in general purpose amplifiers and switches applications. • 200°C/W Thermal Resistance, Junction-to-Ambient • Complement to BC327
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NPN | 45V | 800mA | 625mW | - | Through Hole | 3Pins | 100MHz | 400hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120G
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SC15979 |
Darlington Transistor, NPN, 60 V, 65 W, 5 A, TO-220, 3 Pins ONSEMI The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor
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NPN | - | - | - | TO-220 | Through Hole | 3Pins | - | - | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847B
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SC19196 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 250 mW, SOT-23, Surface Mount MULTICOMP PRO The BC847B is a NPN surface mount silicon planar Epitaxial Transistor. Collector emitter voltage at 45V and power dissipation at 250mW. • 500k/W Junction-to-ambient thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited...
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NPN | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 125hFE | 150°C | Multicomp Pro Bipolar Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KSC1845FTA
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SC19265 |
Bipolar (BJT) Single Transistor, NPN, 120 V, 50 mA, 500 mW, TO-226AA, Through Hole ONSEMI The KSC1845FTA is a NPN Epitaxial Silicon Transistor offers 120V collector base voltage and 50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSA992
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NPN | 120V | 50mA | 500mW | TO-226AA | Through Hole | 3Pins | 110MHz | 300hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD243C
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SC15745 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220 MULTICOMP PRO The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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NPN | 100V | 6A | 65W | TO-220 | Through Hole | 3Pins | 3MHz | 15hFE | 150°C | Multicomp Pro Bipolar NPN Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4401
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SC15746 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 625 mW, TO-92, Through Hole MULTICOMP PRO The 2N4401 from Multicomp Pro is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications. • Collector emitter voltage (Vce) of 40V • Continuous collector...
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NPN | 40V | 600mA | 625mW | TO-92 | Through Hole | 3Pins | 250MHz | 100hFE | 150°C | Multicomp Pro Low Power NPN Bipolar Transistor | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PN2222ATA
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SC15759 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 625 mW, TO-92, Through Hole ONSEMI The PN2222ATA is a NPN Transistor for general purpose power amplifier and switch. • 200°C/W Thermal Resistance, Junction-to-Ambient
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NPN | 40V | 1A | 625mW | TO-92 | Through Hole | 3Pins | 300MHz | 300hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC182L
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SC12579 |
Bipolar (BJT) Single Transistor, NPN, 50 V, 100 mA, 350 mW, TO-92, Through Hole MULTICOMP PRO The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...
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NPN | 50V | 100mA | 350mW | - | Through Hole | 3Pins | 150MHz | 125hFE | 150°C | Multicomp Pro Bipolar Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2803A
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SC08607 |
Darlington Transistor, Darlington, NPN, 50 V, 2.25 W, 500 mA, DIP, 18 Pins STMICROELECTRONICS The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...
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NPN | - | - | - | - | Through Hole | 18Pins | - | - | 85°C | Darlington Array | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15022G
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SC06781 |
Bipolar (BJT) Single Transistor, Audio, NPN, 200 V, 16 A, 250 W, TO-3, Through Hole ONSEMI The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage ...
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NPN | 200V | 16A | 250W | TO-3 | Through Hole | 2Pins | 4MHz | 60hFE | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW71
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SC06592 |
Transistor, NPN SOT23 NXP The BCW71 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K1 Marking code
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NPN | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 90hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2222A
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SC06714 |
Single Bipolar Transistor (BJT), High Speed Switching, NPN, 40 V, 1.2 W, 800 mA, TO-18 MULTICOMP PRO Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...
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NPN | 40V | 800mA | 1.2W | TO-18 | Through Hole | 3Pins | 300MHz | 100hFE | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD241C
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SC06745 |
Bipolar (BJT) Single Transistor, NPN, 100 V, 5 A, 40 W, TO-220, Through Hole STMICROELECTRONICS The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...
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NPN | 100V | 5A | 40W | TO-220 | Through Hole | 3Pins | - | 25hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP3055
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SC06790 |
Bipolar (BJT) Single Transistor, NPN, 70 V, 15 A, 90 W, TO-247, Through Hole STMICROELECTRONICS The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications. • Collector to e...
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NPN | 70V | 15A | 90W | TO-247 | Through Hole | 3Pins | - | 20hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD679
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SC06880 |
Darlington Transistor, Darlington, NPN, 80 V, 40 W, 4 A, SOT-32, 3 Pins STMICROELECTRONICS The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...
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NPN | - | - | - | - | Through Hole | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD437
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SC09319 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 4 A, 36 W, TO-126, Through Hole STMICROELECTRONICS The BD437 is a NPN silicon complementary epitaxial-base Power Transistor in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • PNP complementary type is BD438
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NPN | 45V | 4A | 36W | TO-126 | Through Hole | 3Pins | 3MHz | 140hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT3904
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SC10623 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 330 mW, SOT-23, Surface Mount INFINEON • Transistor Polarity : NPN • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 200mA • Power Dissipation : 330mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 270MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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NPN | 40V | 200mA | 330mW | SOT-23 | Surface Mount | 3Pins | 270MHz | 100hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107B
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SC06645 |
Si-NPN Uni 50V 0.2A 0.3W Transistor MULTICOMP PRO The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...
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NPN | 45V | 100mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 200hFE | 200°C | Multicomp Pro Bipolar NPN Transistor | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847A
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SC06586 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 180hFE • Operating Temperature Max : 150°C
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NPN | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 180hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX70H
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SC06594 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 250 mW, SOT-23, Surface Mount NXP The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code
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NPN | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 180hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























