Npn Transistors
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Npn Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP47
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SC15380 |
Bipolar Transistor, NPN, 250V, 1A, TO-220 MULTICOMP PRO The TIP47 is a 250V Silicon NPN High Voltage Power Transistor designed for line operated audio output amplifier and switching power supply drivers applications. • Collector-emitter sustaining voltage (Vceo (sus) = 250 to 400V minimum) • Collector-base volt...
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NPN | 250V | 1A | 40W | TO-220 | Through Hole | 3Pins | 10MHz | 30hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC108B
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SC15809 |
Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18 MULTICOMP PRO The BC108B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...
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NPN | 25V | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 200hFE | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FZT605
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SC16092 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 1.5A, 2W, SOT-223, SMD DIODES INC. Silicon NPN Darlington transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • Transistor is ideal for use in lamp, relay and solenoid driving • UL flammability rating 94V-0 • Qualified to AEC-Q101 Standards for High Re...
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NPN | - | - | - | SOT-223 | Surface Mount | 3Pins | 150MHz | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBTA06LT1G
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SC16037 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 225mW, SOT-23, SMD ONSEMI MMBTA06LT1G is a driver transistor. • Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C) • Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C • Collector current - continuous is 500mAdc • Electrostatic discha...
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NPN | 80V | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 150°C | MMBTxxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR93AE6327HTSA1
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SC16012 |
Bipolar - RF Transistor, NPN, 12V, 6GHz, 300mW, 90mA, SOT-23 INFINEON • Transistor Polarity : NPN • Collector Emitter Voltage Max : 12V • Continuous Collector Current : 90mA • Power Dissipation : 300mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 6GHz • DC Current Gain hFE Min : 70hFE • Operating Temperature Max : 150°C
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NPN | 12V | 90mA | 300mW | SOT-23 | Surface Mount | 3Pins | 6GHz | 70hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-16LT1G
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SC16059 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD ONSEMI The BC817-16LT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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NPN | 45V | 500mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD122G
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SC16026 |
Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD ONSEMI The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series a...
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NPN | - | - | - | TO-252 (DPAK) | Surface Mount | 3Pins | - | - | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846A
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SC16085 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC846A is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Operati...
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NPN | 65V | 100mA | 310mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 110hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3904TA
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SC15823 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...
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NPN | 40V | 200mA | 625mW | TO-92 | Through Hole | 3Pins | - | 100hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40LT1G
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SC16051 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD ONSEMI The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive...
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NPN | 45V | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 250hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC546BTF
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SC15782 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556
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NPN | 65V | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 200hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR106E6327HTSA1
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SC15949 |
Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23 INFINEON • Low noise silicon bipolar RF transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 at 900MHz, 8V, 70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector des...
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NPN | 16V | 210mA | 700mW | SOT-23 | Surface Mount | 3Pins | 5GHz | 70hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003AD
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SC16578 |
7 Channel NPN Darlington Bipolar Transistor, 50V, 500mA TEXAS INSTRUMENTS ULN2003AD is a high-voltage, high-current Darlington arrays each contains seven open collector Darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), l...
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- | - | - | - | - | - | 16Pins | - | - | 70°C | ULN200x, ULQ200x | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR92PE6327HTSA1
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SC16006 |
Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23 INFINEON The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)
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NPN | 15V | 45mA | 280mW | SOT-23 | Surface Mount | 3Pins | 5GHz | 100hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846ALT1G
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SC16099 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC846ALT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP capable • Moist...
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NPN | 65V | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BPN,115
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SC16127 |
Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88 NEXPERIA The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...
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NPN, PNP | - | - | - | SC-88 | Surface Mount | 6Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15003G
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SC15816 |
Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3 ONSEMI The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...
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NPN | 140V | 20A | 250W | TO-3 | Through Hole | 2Pins | 2MHz | 150hFE | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBSS8110T,215
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SC16078 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD NEXPERIA The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...
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NPN | 100V | 1A | 300mW | SOT-23 | Surface Mount | 3Pins | - | 150hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BDW1T1G
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SC16124 |
Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363 ONSEMI The BC847BDW1T1G is a NPN dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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Dual NPN | - | - | - | SOT-363 | Surface Mount | 6Pins | - | - | 150°C | BCxxx Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2004D1013TR
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SC16139 |
Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC STMICROELECTRONICS ULN2004D1013TR is a high-voltage, high-current Darlington array containing seven open collectors Darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive l...
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NPN | - | - | - | - | Surface Mount | 16Pins | - | - | 85°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV47,215
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SC16011 |
Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BCV47 is a NPN Darlington Transistor with medium current and low voltage, high DC current gain. Used in preamplifier input stages. • Complement to BCV46
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NPN | - | - | - | SOT-23 | Surface Mount | 3Pins | 220MHz | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD122T4G
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SC16081 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series....
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NPN | - | - | - | TO-252 (DPAK) | Surface Mount | 3Pins | 4MHz | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT3904,215
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SC16113 |
Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD NEXPERIA The PMBT3904,215 is a NPN Switching Transistor housed in a surface-mount plastic package. • PNP complement is PMBT3906 • 1A Marking code
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NPN | 40V | 200mA | 250mW | TO-236AB | Surface Mount | 3Pins | 300MHz | 100hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC550CTA
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SC15786 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC550CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560
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NPN | 45V | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 420hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846,215
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SC16015 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BC846,215 is a NPN general purpose Transistor in SMD plastic package. • Two Different Gain Selections
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NPN | 65V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 110hFE | 150°C | - | - |