Npn Transistors

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Npn Transistors


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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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PN2222ABU
PN2222ABU - Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA

SC15797

Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA

ONSEMI

The PN2222ABU is a 40V NPN Bipolar (BJT) Single Transistor for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications. • 75V Collector to base voltage ...

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NPN 40V 1A 625mW TO-226AA Through Hole 3Pins 300MHz 35hFE 150°C - -
BC846S,115
BC846S,115 - Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363

SC16128

Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363

NEXPERIA

The BC846S is a dual NPN General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and small signal amplification. • Reduces number of components and board space • No mutual interference between the transistors ...

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Dual NPN - - - SOT-363 Surface Mount 6Pins - - 150°C - -
2N2219A
2N2219A - Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE

SC15752

Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE

MULTICOMP PRO

2N2219A is a NPN silicon transistor for high speed switching applications. • 75V collector-base voltage • 6V emitter-base voltage • 1.2W total device dissipation • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms ...

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NPN 40V 800mA 3W TO-39 Through Hole 3Pins 300MHz 100hFE 200°C - -
BC846BPN,115
BC846BPN,115 - Bipolar Transistor Array, NPN, PNP, 65V, 100mA, 200mW, 200 hFE, SOT-363

SC16122

Bipolar Transistor Array, NPN, PNP, 65V, 100mA, 200mW, 200 hFE, SOT-363

NEXPERIA

The BC846BPN is a 100mA NPN-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage •...

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NPN, PNP - - - SOT-363 Surface Mount 6Pins - - 150°C - -
BD139-10
BD139-10 - Bipolar Transistor, NPN, 80V, 1.5A, TO-126

SC15373

Bipolar Transistor, NPN, 80V, 1.5A, TO-126

MULTICOMP PRO

The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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NPN 80V 1.5A 12.5W TO-126 Through Hole 3Pins - 63hFE 150°C - -
BC846BW,115
BC846BW,115 - Bipolar (BJT) Single Transistor,  NPN, 65V, 100mA, 200mW, SOT-323, SMD

SC16050

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 200mW, SOT-323, SMD

NEXPERIA

The BC846BW,115 is a NPN Switching Transistor in surface mount device plastic package with 3 leads. • Two different gain selections

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NPN 65V 100mA 200mW SOT-323 Surface Mount 3Pins 100MHz 200hFE 150°C - -
FZT853
FZT853 - Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 3W, SOT-223, SMD

SC16106

Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 3W, SOT-223, SMD

DIODES INC.

FZT853 is a 100V NPN silicon planar high current (high performance) transistor in a 4-pin SOT223 package. • Extremely low equivalent on-resistance RCE(sat) 44mohm at 5A • 6A continuous current, up to 10A peak current • Very low saturation voltages • Excell...

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NPN 100V 6A 3W SOT-223 Surface Mount 4Pins 130MHz 100hFE 150°C - -
BC817
BC817 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

SC16033

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

MULTICOMP PRO

The BC817 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms...

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NPN 45V 500mA 300mW SOT-23 Surface Mount 3Pins 170MHz 100hFE 150°C Multicomp Pro Bipolar Transistors -
BCX56-16,115
BCX56-16,115 - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 500mW, SOT-89, SMD

SC16020

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 500mW, SOT-89, SMD

NEXPERIA

The BCX56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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NPN 80V 1A 500mW SOT-89 Surface Mount 3Pins 180MHz 100hFE 150°C BCX56 -
BC847BLT1G
BC847BLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 300mW, SOT-23, SMD

SC16045

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC847BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD rating - Human body model of <gt/>4000V • ESD ratin...

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NPN 45V 100mA 300mW SOT-23 Surface Mount 3Pins 100MHz 450hFE 150°C - -
BSR14
BSR14 - Bipolar (BJT) Single Transistor, NPN, 40V, 800mA, 350mW, SOT-23, SMD

SC16031

Bipolar (BJT) Single Transistor, NPN, 40V, 800mA, 350mW, SOT-23, SMD

ONSEMI

The BSR14 is a NPN general purpose Bipolar Transistor designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from Process 19 • -55 to 150°C Operating junction temperature range

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NPN 40V 800mA 350mW SOT-23 Surface Mount 3Pins 300MHz 300hFE 150°C - -
BC547CBU
BC547CBU - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

SC15784

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

ONSEMI

The BC547CBU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC557

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NPN 45V 100mA 500mW TO-92 Through Hole 3Pins 300MHz 420hFE 150°C - -
2N1893
2N1893 - Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 800mW, TO-39

SC15753

Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 800mW, TO-39

MULTICOMP PRO

The 2N1893 is a 80V Bipolar (BJT) Silicon NPN Transistor designed primarily for amplifier and switching applications. • High breakdown voltage • Low leakage current • Low capacity • Beta useful over an extremely wide current range • Multicomp Pro products ...

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NPN 80V 500mA 800mW TO-39 Through Hole 3Pins 50MHz 20hFE 200°C - -
FMMT493
FMMT493 - Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 500mW, SOT-23, SMD

SC16073

Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 500mW, SOT-23, SMD

DIODES INC.

FMMT493 is a 100V, 2A NPN silicon planar medium power transistor in a 3-pin SOT-23 package. • Transition frequency of 150MHz • Power dissipation (Pd) of 500mW • Continuous collector current of 1A • Operating temperature range from -55°C to 150°C

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NPN 100V 1A 500mW SOT-23 Surface Mount 3Pins 150MHz 100hFE 150°C - -
BCX55-16,115
BCX55-16,115 - Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-89, SMD

SC16066

Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-89, SMD

NEXPERIA

The BCX55 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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NPN 60V 1A 500mW SOT-89 Surface Mount 3Pins 180MHz 100hFE 150°C BCX55 -
BC33725BU
BC33725BU - Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3

SC15780

Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3

ONSEMI

The BC33725BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327

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NPN 45V 800mA 625mW TO-92 Through Hole 3Pins 100MHz 100hFE 150°C - -
BC846B,215
BC846B,215 - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

SC16007

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

BC846B,215 is a 65V, 100mA NPN general purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C

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NPN 65V 100mA 250mW SOT-23 Surface Mount 3Pins 100MHz 200hFE 150°C BC846 Series -
PDTC143ET,215
PDTC143ET,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm

SC15946

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm

NEXPERIA

The PDTC143ET,215 is a NPN Resistor Equipped Transistor (RET) housed in small surface-mount plastic package. It offers built-in bias resistors and simplifies circuit design. It is designed for use with control of IC inputs, cost-saving alternative for BC84...

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Single NPN - 100mA 250mW SOT-23 Surface Mount - - 30hFE 150°C - -
BC847BLT3G
BC847BLT3G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

SC16032

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

ONSEMI

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 225mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 200hFE • Operating Temperature Max : 150°C • Qualification : AEC-Q101

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NPN 45V 100mA 225mW SOT-23 Surface Mount 3Pins 100MHz 200hFE 150°C - AEC-Q101
MJD44H11G
MJD44H11G - Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD

SC16077

Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD44H11G is a bipolar Power Transistor, designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead formed for surface mount application in plastic slee...

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NPN 80V 8A 20W TO-252 (DPAK) Surface Mount 3Pins 85MHz 60hFE 150°C - AEC-Q101
BCP56-16,115
BCP56-16,115 - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

SC16109

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

NEXPERIA

The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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NPN 80V 1A 650mW SOT-223 Surface Mount 4Pins 180MHz 100hFE 150°C BCP56 -
MMBT2222A-7-F
MMBT2222A-7-F - Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 300mW, SOT-23, SMD

SC16034

Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 300mW, SOT-23, SMD

DIODES INC.

MMBT2222A-7-F is a 40V NPN small signal transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of moulded plastic, "Green" moulding compound (UL94V-0). The transistor is ideal for low-power...

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NPN 40V 600mA 310mW SOT-23 Surface Mount 3Pins 300MHz 100hFE 150°C - -
MJE3055T
MJE3055T - Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220

SC15821

Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220

STMICROELECTRONICS

The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...

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NPN 60V 10A 75W TO-220 Through Hole 3Pins 2MHz 400hFE 150°C - -
MMBT3904LT1G
MMBT3904LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD

SC15980

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD

ONSEMI

MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...

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NPN 40V 200mA 225mW SOT-23 Surface Mount 3Pins 300MHz 300hFE 150°C MMBTxxxx AEC-Q101
MUN5211DW1T1G
MUN5211DW1T1G - Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm

SC15948

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm

ONSEMI

The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...

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Dual NPN - 100mA 385mW SOT-363 Surface Mount - - 35hFE 150°C - -