Npn Transistors
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Npn Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | DC Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBTA45,215
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SC16055 |
Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD NEXPERIA The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...
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NPN | 500V | 150mA | 150mA | 300mW | SOT-23 | Surface Mount | 3Pins | 35MHz | 50hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC5200
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SC15763 |
Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P TOSHIBA The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...
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NPN | 230V | 15A | - | 150W | TO-3PL | Through Hole | 3Pins | 30MHz | 80hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP150
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SC15740 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220 MULTICOMP PRO The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum) • Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A) • Mul...
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NPN | - | - | 7A | - | - | Through Hole | 3Pins | - | - | 150hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC517-D74Z
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SC15804 |
Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92 ONSEMI • Transistor Polarity : NPN • DC Collector Current : 1.2A • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE : 30000hFE • Operating Temperature Max : 150°C
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NPN | - | - | 1.2A | - | - | Through Hole | 3Pins | - | - | 30000hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FMMT458
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SC16056 |
Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD DIODES INC. FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...
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NPN | 400V | 225mA | 225mA | 500mW | SOT-23 | Surface Mount | 3Pins | 50MHz | 100hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BLT3G
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SC16046 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • DC Collector Current : 100mA • Power Dissipation : 225mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 200hFE • DC Current Gain hFE : 200hFE • Operating Temperature Max : 150°C • Qualification : AEC-Q101
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NPN | 65V | 100mA | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 200hFE | 200hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTD123YT,215
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SC15947 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm NEXPERIA The PDTD123YT is a 2.2 to 10kΩ NPN Resistor Equipped Transistor (RET) in a surface-mount plastic package. • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place costs • ±10% Resistor ratio tolerance • PNP c...
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Single NPN | - | 500mA | - | 250mW | SOT-23 | Surface Mount | - | - | 70hFE | - | 150°C | PDTD123Y Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC850CLT1G
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SC16098 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI The BC850CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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NPN | 45V | 100mA | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 800hFE | 800hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC63916-D27Z
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SC15791 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 830mW, TO-226AA ONSEMI The BC63916_D27Z is a NPN Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • -55 to 150°C Operating junction temperature range
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NPN | 80V | 1A | - | 830mW | TO-92 | Through Hole | 3Pins | 100MHz | 25hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT491
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SC16093 |
Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-23, SMD DIODES INC. The FMMT491 is a NPN silicon planar medium power Bipolar Transistor offers 210mΩ low equivalent ON-resistance RCE (sat) at 1A. • FMMT591 Complementary type • -55 to 150°C Operating temperature range
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NPN | 60V | 1A | 1A | 500mW | SOT-23 | Surface Mount | 3Pins | 150MHz | 100hFE | 150hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC114ET,215
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SC15942 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm NEXPERIA The PDTC114ET,215 is a NPN Resistor-equipped Transistor family in a small surface mounted device plastic package with 3 leads, built-in bias resistors, simplifies circuit design and reduces component count. • 100mA Output current capability • Reduces pick ...
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Single NPN | - | 100mA | - | 250mW | SOT-23 | Surface Mount | - | - | 30hFE | - | 150°C | PDTC114E Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BS,115
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SC16119 |
Bipolar Transistor Array, NPN, 45V, 100mA, 250mW, 200hFE NEXPERIA The BC847BS from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduces...
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Dual NPN | - | - | 100mA | - | SC-88 | Surface Mount | 6Pins | - | - | 200hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5200OTU
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SC15777 |
Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 150W, TO-264AA ONSEMI The 2SC5200OTU is a 250V NPN Epitaxial Silicon Transistor features high current capability and high power dissipation. Suitable for high fidelity audio output amplifier and general purpose power amplifier applications. This product is general usage and sui...
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NPN | 250V | 17A | - | 150W | TO-264 | Through Hole | 3Pins | 30MHz | 80hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-25
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SC16054 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD DIODES INC. BC817-25 is a NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Collector-emitter voltage is 45V (open base, Tamb = 25°C), collector current is 500mA (Tamb = 25°C) • Peak collector current is 1A (sin...
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NPN | 45V | 500mA | 500mA | 310mW | SOT-23 | Surface Mount | 3Pins | - | 400hFE | 400hFE | 150°C | BC817 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCP56-16T1G
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SC16067 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 1A, 1.5W, SOT-223, SMD ONSEMI The BCP56-16T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in audio amplifier applications. The device is housed in the package which is designed for medium power surface-mount applications. This package can be soldered using wave or re...
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NPN | 80V | 1A | 1A | 1.5W | SOT-223 | Surface Mount | 3Pins | 130MHz | 100hFE | 100hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817K-25VL
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SC15932 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • DC Collector Current : 500mA • Power Dissipation : 350mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 160hFE • DC Current Gain hFE : 160hFE • Operating Temperature Max : 150°C • Product Range : BC817K • Qualification : AEC-Q101
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NPN | 45V | 500mA | 500mA | 350mW | TO-236AB | Surface Mount | 3Pins | 100MHz | 160hFE | 160hFE | 150°C | BC817K | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW66G
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SC15372 |
Bipolar Transistor, NPN, 45V, 800mA, SOT-23 MULTICOMP PRO • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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NPN | 45V | 800mA | - | 330mW | SOT-23 | Surface Mount | 3Pins | 170MHz | 400hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC850B,215
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SC16043 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC850B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • PNP complements are BC859 and BC860 • 2F Marking code
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NPN | 45V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 290hFE | 290hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40,215..
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SC16035 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, TO-236AB NEXPERIA The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement
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NPN | 45V | 500mA | 500mA | 250mW | TO-236AB | Surface Mount | 3Pins | 100MHz | 250hFE | 250hFE | 150°C | BC817 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT491A
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SC16062 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 500mW, SOT-23, SMD DIODES INC. The FMMT491A is a NPN silicon planar medium Power Transistor with matte tin plated leads and UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard, very low equivalent resistance. • Level-1 per J-STD-020 moi...
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NPN | 40V | 1A | 1A | 500mW | SOT-23 | Surface Mount | 3Pins | 150MHz | 300hFE | 300hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847CLT1G
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SC16048 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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NPN | 45V | 100mA | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 520hFE | 520hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846B
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SC16038 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC846B is a NPN general purpose Transistor in surface mounted device (SMD) plastic package. Designed for use in switching and amplification applications. Ideal for AF input stages and driver applications. • High current gain • Excellent hfe linearity •...
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NPN | 65V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 200hFE | 200hFE | 150°C | Multicomp Pro Bipolar Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003ADR
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SC16126 |
Bipolar Transistor Array, NPN, 50V, 500mA, SOIC TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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- | - | - | - | - | - | Surface Mount | 16Pins | - | - | - | 70°C | ULx2004A | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FJP13009H2TU
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SC15758 |
Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220 ONSEMI The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipati...
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NPN | 400V | 12A | - | 100W | TO-220 | Through Hole | 3Pins | 4MHz | 8hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003AN...
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SC16132 |
Bipolar Transistor Array, NPN, 50V, 500mA, 25W, 600hFE, DIP TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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NPN | - | - | - | - | DIP | Through Hole | 16Pins | - | - | - | 70°C | ULN200x | - |