Npn Transistors

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Npn Transistors


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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current DC Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min DC Current Gain hFE Operating Temperature Max Product Range Qualification
 
 
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PMBTA45,215
PMBTA45,215 - Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD

SC16055

Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD

NEXPERIA

The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...

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NPN 500V 150mA 150mA 300mW SOT-23 Surface Mount 3Pins 35MHz 50hFE 100hFE 150°C - -
TTC5200
TTC5200 - Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P

SC15763

Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P

TOSHIBA

The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...

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NPN 230V 15A - 150W TO-3PL Through Hole 3Pins 30MHz 80hFE - 150°C - -
TIP150
TIP150 - Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220

SC15740

Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220

MULTICOMP PRO

The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum) • Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A) • Mul...

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NPN - - 7A - - Through Hole 3Pins - - 150hFE 150°C - -
BC517-D74Z
BC517-D74Z - Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92

SC15804

Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92

ONSEMI

• Transistor Polarity : NPN • DC Collector Current : 1.2A • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE : 30000hFE • Operating Temperature Max : 150°C

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NPN - - 1.2A - - Through Hole 3Pins - - 30000hFE 150°C - -
FMMT458
FMMT458 - Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

SC16056

Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

DIODES INC.

FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...

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NPN 400V 225mA 225mA 500mW SOT-23 Surface Mount 3Pins 50MHz 100hFE 100hFE 150°C - -
BC846BLT3G
BC846BLT3G - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD

SC16046

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD

ONSEMI

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • DC Collector Current : 100mA • Power Dissipation : 225mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 200hFE • DC Current Gain hFE : 200hFE • Operating Temperature Max : 150°C • Qualification : AEC-Q101

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NPN 65V 100mA 100mA 225mW SOT-23 Surface Mount 3Pins 100MHz 200hFE 200hFE 150°C - AEC-Q101
PDTD123YT,215
PDTD123YT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm

SC15947

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm

NEXPERIA

The PDTD123YT is a 2.2 to 10kΩ NPN Resistor Equipped Transistor (RET) in a surface-mount plastic package. • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place costs • ±10% Resistor ratio tolerance • PNP c...

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Single NPN - 500mA - 250mW SOT-23 Surface Mount - - 70hFE - 150°C PDTD123Y Series -
BC850CLT1G
BC850CLT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

SC16098

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

ONSEMI

The BC850CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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NPN 45V 100mA 100mA 225mW SOT-23 Surface Mount 3Pins 100MHz 800hFE 800hFE 150°C BCxxx AEC-Q101
BC63916-D27Z
BC63916-D27Z - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 830mW, TO-226AA

SC15791

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 830mW, TO-226AA

ONSEMI

The BC63916_D27Z is a NPN Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • -55 to 150°C Operating junction temperature range

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NPN 80V 1A - 830mW TO-92 Through Hole 3Pins 100MHz 25hFE - 150°C - -
FMMT491
FMMT491 - Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-23, SMD

SC16093

Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT491 is a NPN silicon planar medium power Bipolar Transistor offers 210mΩ low equivalent ON-resistance RCE (sat) at 1A. • FMMT591 Complementary type • -55 to 150°C Operating temperature range

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NPN 60V 1A 1A 500mW SOT-23 Surface Mount 3Pins 150MHz 100hFE 150hFE 150°C - -
PDTC114ET,215
PDTC114ET,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm

SC15942

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm

NEXPERIA

The PDTC114ET,215 is a NPN Resistor-equipped Transistor family in a small surface mounted device plastic package with 3 leads, built-in bias resistors, simplifies circuit design and reduces component count. • 100mA Output current capability • Reduces pick ...

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Single NPN - 100mA - 250mW SOT-23 Surface Mount - - 30hFE - 150°C PDTC114E Series -
BC847BS,115
BC847BS,115 - Bipolar Transistor Array, NPN, 45V, 100mA, 250mW, 200hFE

SC16119

Bipolar Transistor Array, NPN, 45V, 100mA, 250mW, 200hFE

NEXPERIA

The BC847BS from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduces...

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Dual NPN - - 100mA - SC-88 Surface Mount 6Pins - - 200hFE 150°C - -
2SC5200OTU
2SC5200OTU - Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 150W, TO-264AA

SC15777

Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 150W, TO-264AA

ONSEMI

The 2SC5200OTU is a 250V NPN Epitaxial Silicon Transistor features high current capability and high power dissipation. Suitable for high fidelity audio output amplifier and general purpose power amplifier applications. This product is general usage and sui...

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NPN 250V 17A - 150W TO-264 Through Hole 3Pins 30MHz 80hFE - 150°C - -
BC817-25
BC817-25 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD

SC16054

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD

DIODES INC.

BC817-25 is a NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Collector-emitter voltage is 45V (open base, Tamb = 25°C), collector current is 500mA (Tamb = 25°C) • Peak collector current is 1A (sin...

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NPN 45V 500mA 500mA 310mW SOT-23 Surface Mount 3Pins - 400hFE 400hFE 150°C BC817 -
BCP56-16T1G
BCP56-16T1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 1A, 1.5W, SOT-223, SMD

SC16067

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 1A, 1.5W, SOT-223, SMD

ONSEMI

The BCP56-16T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in audio amplifier applications. The device is housed in the package which is designed for medium power surface-mount applications. This package can be soldered using wave or re...

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NPN 80V 1A 1A 1.5W SOT-223 Surface Mount 3Pins 130MHz 100hFE 100hFE 150°C BCxxx AEC-Q101
BC817K-25VL
BC817K-25VL - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

SC15932

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

NEXPERIA

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • DC Collector Current : 500mA • Power Dissipation : 350mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 160hFE • DC Current Gain hFE : 160hFE • Operating Temperature Max : 150°C • Product Range : BC817K • Qualification : AEC-Q101

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NPN 45V 500mA 500mA 350mW TO-236AB Surface Mount 3Pins 100MHz 160hFE 160hFE 150°C BC817K AEC-Q101
BCW66G
BCW66G - Bipolar Transistor, NPN, 45V, 800mA, SOT-23

SC15372

Bipolar Transistor, NPN, 45V, 800mA, SOT-23

MULTICOMP PRO

• Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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NPN 45V 800mA - 330mW SOT-23 Surface Mount 3Pins 170MHz 400hFE - 150°C - -
BC850B,215
BC850B,215 - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD

SC16043

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC850B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • PNP complements are BC859 and BC860 • 2F Marking code

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NPN 45V 100mA 100mA 250mW SOT-23 Surface Mount 3Pins - 290hFE 290hFE 150°C - -
BC817-40,215..
BC817-40,215.. - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, TO-236AB

SC16035

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, TO-236AB

NEXPERIA

The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement

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NPN 45V 500mA 500mA 250mW TO-236AB Surface Mount 3Pins 100MHz 250hFE 250hFE 150°C BC817 -
FMMT491A
FMMT491A - Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 500mW, SOT-23, SMD

SC16062

Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT491A is a NPN silicon planar medium Power Transistor with matte tin plated leads and UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard, very low equivalent resistance. • Level-1 per J-STD-020 moi...

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NPN 40V 1A 1A 500mW SOT-23 Surface Mount 3Pins 150MHz 300hFE 300hFE 150°C - -
BC847CLT1G
BC847CLT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD

SC16048

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC847CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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NPN 45V 100mA 100mA 300mW SOT-23 Surface Mount 3Pins 100MHz 520hFE 520hFE 150°C BCxxx AEC-Q101
BC846B
BC846B - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

SC16038

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

MULTICOMP PRO

The BC846B is a NPN general purpose Transistor in surface mounted device (SMD) plastic package. Designed for use in switching and amplification applications. Ideal for AF input stages and driver applications. • High current gain • Excellent hfe linearity •...

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NPN 65V 100mA 100mA 250mW SOT-23 Surface Mount 3Pins 100MHz 200hFE 200hFE 150°C Multicomp Pro Bipolar Transistors NPN -
ULN2003ADR
ULN2003ADR - Bipolar Transistor Array, NPN, 50V, 500mA, SOIC

SC16126

Bipolar Transistor Array, NPN, 50V, 500mA, SOIC

TEXAS INSTRUMENTS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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- - - - - - Surface Mount 16Pins - - - 70°C ULx2004A -
FJP13009H2TU
FJP13009H2TU - Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220

SC15758

Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220

ONSEMI

The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipati...

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NPN 400V 12A - 100W TO-220 Through Hole 3Pins 4MHz 8hFE - 150°C - -
ULN2003AN...
ULN2003AN... - Bipolar Transistor Array, NPN, 50V, 500mA, 25W, 600hFE, DIP

SC16132

Bipolar Transistor Array, NPN, 50V, 500mA, 25W, 600hFE, DIP

TEXAS INSTRUMENTS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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NPN - - - - DIP Through Hole 16Pins - - - 70°C ULN200x -