Npn Transistors
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Npn Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max NPN | Collector Emitter Voltage Max PNP | Continuous Collector Current | Base Input Resistor R1 | Base Emitter Resistor R2 | Transistor Case Style | No. of Pins | Transistor Mounting | Power Dissipation | Operating Temperature Max | DC Current Gain hFE Min | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2233LT1G
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SC15940 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm ONSEMI MMUN2233LT1G is an MMUN2233L series NPN transistor with a monolithic bias resistor network digital transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor...
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Single NPN | 50V | - | 100mA | 4.7kohm | 47kohm | SOT-23 | 3 Pin | Surface Mount | 400mW | 150°C | 80hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5242OTU
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SC15936 |
Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 130W, TO-3P ONSEMI • Transistor Polarity : NPN • Continuous Collector Current : 17A • Transistor Case Style : TO-3P • Transistor Mounting : Through Hole • Power Dissipation : 130W • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 80hFE
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NPN | - | - | 17A | - | - | TO-3P | - | Through Hole | 130W | 150°C | 80hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6284G
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SC15801 |
Bipolar (BJT) Single Transistor, NPN, 100V, 20A, 160W, TO-3 ONSEMI The 2N6284G is a NPN Darlington bipolar Power Transistor with monolithic construction, built-in base-emitter shunt resistors, designed for general-purpose amplifier and low-frequency switching applications. • High DC current gain • 1.09°C/W Junction-to-cas...
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NPN | - | - | - | - | - | - | - | Through Hole | - | 200°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUTW92
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SC15729 |
Bipolar (BJT) Single Transistor, NPN, 250V, 180W, 60A, 9hFE STMICROELECTRONICS The BUTW92 is a 250V High Current NPN Silicon Transistor suited for power conversion applications, high efficiency converters and motor controls. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • H...
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NPN | - | - | 60A | - | - | TO-247 | - | Through Hole | 180W | 150°C | 9hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC848C-7-F
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SC16108 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC848C-7-F is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Ope...
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 310mW | 150°C | 600hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC141-16
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SC15378 |
Bipolar Transistor, NPN, 60V, 1A, TO-39 MULTICOMP PRO The BC141-16 from Multicomp Pro are through hole, NPN medium power, silicon planar epitaxial transistors in TO-39 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector curren...
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NPN | - | - | 1A | - | - | TO-39 | - | Through Hole | 800mW | 200°C | 30hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FJPF5021OTU
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SC15806 |
Bipolar (BJT) Single Transistor, NPN, 500V, 5A, 40W, TO-220F ONSEMI • NPN silicon transistor • High voltage and high reliability • High speed switching • Wide SOA
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NPN | - | - | 5A | - | - | TO-220F | - | Through Hole | 40W | 150°C | 20hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848ALT1G
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SC16058 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Continuous Collector Current : 100mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 300mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 110hFE • Product Range : BCxxx • Qualification : AEC-Q101
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 300mW | 150°C | 110hFE | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847,215
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SC16017 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC847,215 is a NPN general purpose Transistor in SMD plastic package. • Three Different Gain Selections
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 250mW | 150°C | 110hFE | BC847 Series | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31CG
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SC15737 |
Bipolar (BJT) Single Transistor, NPN, 100V, 3A, 40W, TO-220 ONSEMI The TIP31CG is a 100V Silicon NPN Bipolar Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • High current gain bandwidth • Collector-base voltage (Vcbo = 100V) • Emitter-base voltage (Vcbo = 5...
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NPN | - | - | 3A | - | - | TO-220 | - | Through Hole | 40W | 150°C | 10hFE | TIPxxx | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3773G
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SC15818 |
Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA ONSEMI The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters o...
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NPN | - | - | 16A | - | - | TO-204AA | - | Through Hole | 150W | 200°C | 4hFE | 2NXXXX | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847CW,115
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SC16086 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC847CW,115 is a NPN general purpose Transistor with 3 leads, plastic surface mount package. Designed for switching and amplification applications. • Three different gain selections
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NPN | - | - | 100mA | - | - | SOT-323 | - | Surface Mount | 200mW | 150°C | 420hFE | BC847 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846
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SC16117 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC846 is a NPN general purpose Bipolar Transistor housed in a surface-mount plastic package. It is used in AF input stages and driver applications, suitable for switching and amplification applications. • Two different gain selections • High current ga...
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 250mW | 150°C | 110hFE | Multicomp Pro Bipolar Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA42LT1G
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SC16052 |
Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 225mW, SOT-23, SMD ONSEMI The MMBTA42LT1G is a 300V NPN silicon high voltage Bipolar Transistor designed for general purpose amplifier applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 30...
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NPN | - | - | 500mA | - | - | SOT-23 | - | Surface Mount | 225mW | 150°C | 50hFE | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC818-40LT1G
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SC16100 |
Bipolar (BJT) Single Transistor, NPN, 25V, 500mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Continuous Collector Current : 500mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 225mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 40hFE • Qualification : AEC-Q101
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NPN | - | - | 500mA | - | - | SOT-23 | - | Surface Mount | 225mW | 150°C | 40hFE | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA42
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SC15748 |
Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 625mW, TO-92 MULTICOMP PRO The MPSA42 is a NPN epitaxial planar Silicon Transistor with 160V minimum breakdown voltage. It is used for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • Complementary high voltage transistor • -55 to 150°C...
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NPN | - | - | 500mA | - | - | TO-92 | - | Through Hole | 625mW | 150°C | 40hFE | Multicomp Pro Bipolar Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PZT2222AT1G
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SC16082 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 1.5W, SOT-223, SMD ONSEMI The PZT2222AT1G is an NPN Silicon Planar Epitaxial Transistor designed for use in linear and switching and medium power surface mount applications. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. T...
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NPN | - | - | 600mA | - | - | SOT-223 | - | Surface Mount | 1.5W | 150°C | 300hFE | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BS-7-F
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SC16137 |
Bipolar Transistor Array, Dual, NPN, 45V, 100mA, 200mW, 200hFE, SOT-363 DIODES INC. The BC847BS-7-F is a dual NPN small signal surface-mount Bipolar Transistor Array ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Ultra-small surface-mount package • Halogen-free, Green dev...
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Dual NPN | 45V | - | - | - | - | SOT-363 | - | Surface Mount | - | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC546BTA
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SC15772 |
Bipolar (BJT) Single Transistor, Small Signal, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTA is a 65V NPN Epitaxial Silicon Transistor used as switching and amplifier. This product is general usage and suitable for many different applications. It is complement to BC556, BC557, BC558, BC559 and BC560 switching and amplifier. • High vol...
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NPN | - | - | 100mA | - | - | TO-92 | - | Through Hole | 500mW | 150°C | 110hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-16
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SC16065 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD DIODES INC. The BC817-16 is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC807 Complementary PNP type • Halogen-free, Green ...
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NPN | - | - | 500mA | - | - | SOT-23 | - | Surface Mount | 310mW | 150°C | 100hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107A
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SC15376 |
Bipolar Transistor, NPN, 45V, 100mA, TO-18 MULTICOMP PRO The BC107A is a 45V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products are rated 4.6 out of 5 stars...
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NPN | - | - | 100mA | - | - | TO-18 | - | Through Hole | 600mW | 200°C | 110hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DTC114EET1G
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SC15943 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The DTC114EET1G is a NPN Digital Transistor with monolithic bias resistor network designed to replace a single device and its external resistor bias network. The bias resistor transistor contains a single transistor with a monolithic bias network consistin...
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Single NPN | 50V | - | 100mA | 10kohm | 10kohm | SOT-416 | 3 Pin | Surface Mount | 300mW | 150°C | 35hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003D1013TR
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SC16589 |
NPN Darlington Transistor Array, 50V, 500mA, SOIC STMICROELECTRONICS ULN2003D1013TR is a high-voltage, high-current Darlington arrays each contains seven open collector Darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharg...
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- | - | - | - | - | - | - | - | - | - | 85°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC546CTA
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SC15935 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 625mW, TO-92 ONSEMI • Transistor Polarity : NPN • Continuous Collector Current : 100mA • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • Power Dissipation : 625mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 420hFE • Product Range : BC546C
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NPN | - | - | 100mA | - | - | TO-92 | - | Through Hole | 625mW | 150°C | 420hFE | BC546C | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C-7-F
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SC16101 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC847C-7-F is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Ope...
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 310mW | 150°C | 600hFE | - | - |