Npn Transistors
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Npn Transistors
Displaying products for Npn Transistors - from our range of leading brand manufacturers.
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max NPN | Collector Emitter Voltage Max PNP | Continuous Collector Current | Base Input Resistor R1 | Base Emitter Resistor R2 | Transistor Case Style | No. of Pins | Transistor Mounting | Power Dissipation | Operating Temperature Max | DC Current Gain hFE Min | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DTC114EKAT146
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SC21497 |
Bipolar Pre-Biased / Digital Transistor, Digital, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm ROHM The DTC114EKAT146 is a 100mA NPN Digital Transistor with built-in bias resistor. The built-in bias resistor enables the configuration of an inverter circuit without connecting external input resistors. • Only ON/OFF conditions need to be set for operation,...
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Single NPN | 50V | - | 100mA | 10kohm | 10kohm | SC-59 | 3 Pin | Surface Mount | 200mW | 150°C | 30hFE | DTC114E Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC846B-13-F
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SC21300 |
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 350 mW, SOT-23, Surface Mount DIODES INC. BC846B-13-F is a NPN small signal transistor. • For switching and AF amplifier applications • Power dissipation is 310mW at TA = +25°C • Collector-base breakdown voltage is 80V min at IC = 10µA, TA = +25°C • Collector cutoff current is 15nA max at VCB = 30...
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 310mW | 150°C | 330hFE | BC846 | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847BHZGT116
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SC21496 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 350 mW, SOT-23, Surface Mount ROHM • Transistor Polarity : NPN • Continuous Collector Current : 100mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 350mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 200hFE • Qualification : AEC-Q101
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 350mW | 150°C | 200hFE | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP121
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SC21402 |
Darlington Transistor, Darlington, NPN, 80 V, 65 W, 5 A, TO-220, 3 Pins MULTICOMP PRO The TIP121 is a 80V NPN Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 80V minimum...
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NPN | - | - | - | - | - | - | - | Through Hole | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817-16
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SC21378 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount MULTICOMP PRO The BC817-16 is a NPN Bipolar Transistor suitable for general purpose medium power amplifiers and switching requiring collector currents up to 1.2mA. • High collector current • High current gain • Low collector-emitter saturation voltage • -65 to 150°C Jun...
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NPN | - | - | 500mA | - | - | SOT-23 | - | Surface Mount | 300mW | 150°C | 100hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SS8050CBU
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SC21492 |
Bipolar (BJT) Single Transistor, NPN, 25 V, 1.5 A, 1 W, TO-226AA, Through Hole ONSEMI The SS8050CBU is a NPN Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8550
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NPN | - | - | 1.5A | - | - | TO-226AA | - | Through Hole | 1W | 150°C | 120hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMMBT3904LT1G
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SC21490 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount ONSEMI SMMBT3904LT1G is a NPN general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is 40VDC • AEC-Q101 qualified and PPAP capable • Collector current - continuous is 200mA DC • Collector-base voltage VCBO is 60VDC, emitter-base voltag...
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NPN | - | - | 200mA | - | - | SOT-23 | - | Surface Mount | 300mW | 150°C | 300hFE | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847W,115
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SC21408 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount NEXPERIA The BC847 series NPN general purpose Transistor in SMD plastic package.
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NPN | - | - | 100mA | - | - | SOT-323 | - | Surface Mount | 200mW | 150°C | 110hFE | BC847 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31C
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SC21528 |
Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole STMICROELECTRONICS The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • High Switching Speed • hFE Improved Linearity • hFE Grouping
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NPN | - | - | 3A | - | - | TO-220 | - | Through Hole | 40W | 150°C | 25hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC143XT,215
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SC21429 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm NEXPERIA The PDTC143XT is a 4.7 to 10kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP comple...
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Single NPN | 50V | - | 100mA | 4.7kohm | 10kohm | SOT-23 | 3 Pin | Surface Mount | 250mW | 150°C | 50hFE | PDTC143X Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC123JT,215
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SC21428 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm NEXPERIA The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...
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Single NPN | 50V | - | 100mA | 2.2kohm | 47kohm | SOT-23 | 3 Pin | Surface Mount | 250mW | 150°C | 100hFE | PDTC123J Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC06580 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Continuous Collector Current : 500mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 100hFE
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NPN | - | - | 500mA | - | - | SOT-23 | - | Surface Mount | 250mW | 150°C | 100hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2216LT1G
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SC10967 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm ONSEMI The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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Single NPN | 50V | - | 100mA | 4.7kohm | - | SOT-23 | 3 Pin | Surface Mount | 400mW | 150°C | 160hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846
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SC06582 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Continuous Collector Current : 100mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 110hFE
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 250mW | 150°C | 110hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17PE6327HTSA1
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SC11003 |
Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23 INFINEON The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.
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NPN | - | - | 25mA | - | - | SOT-23 | - | Surface Mount | 280mW | 150°C | 70hFE | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817K-40VL
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SC15928 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : NPN • Continuous Collector Current : 500mA • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Power Dissipation : 350mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 250hFE • Product Range : BC817K • Qualification : AEC-Q101
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NPN | - | - | 500mA | - | - | TO-236AB | - | Surface Mount | 350mW | 150°C | 250hFE | BC817K | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUV48A
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SC06801 |
Transistor, NPN, TO247 MOSPEC • Transistor Polarity : NPN • Transistor Mounting : Through Hole • Power Dissipation : 150W
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NPN | - | - | - | - | - | - | - | Through Hole | 150W | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2211LT1G
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SC19267 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio) ONSEMI The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single trans...
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Single NPN | 50V | - | 100mA | 10kohm | 10kohm | SOT-23 | 3 Pin | Surface Mount | 400mW | 150°C | 35hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15015G
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SC06780 |
Transistor, NPN, TO3 ONSEMI The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverte...
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NPN | - | - | 15A | - | - | TO-3 | - | Through Hole | 180W | 200°C | 70hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW60B
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SC06591 |
Transistor, NPN SOT23 NXP The BCW60B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • AB marking code
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NPN | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 250mW | 150°C | 180hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTIP41C
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SC06757 |
Transistor, NPN, TO220 MULTICOMP PRO • Transistor Polarity : NPN • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole
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NPN | - | - | - | - | - | TO-220 | - | Through Hole | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT2222A
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SC10624 |
Transistor, NPN, SOT23 INFINEON • Transistor Polarity : NPN • Continuous Collector Current : 600mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 330mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 100hFE • Qualification : AEC-Q101
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NPN | - | - | 600mA | - | - | SOT-23 | - | Surface Mount | 330mW | 150°C | 100hFE | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT658
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SC10987 |
Transistor, NPN, SOT223 DIODES INC. The FZT658 is a NPN silicon planar high voltage Bipolar Transistor offers 500mA high continuous current and less-than 250mV low saturation voltage VCE (SAT) @ 50mA. • UL94V-0 Flammability rating • 1A Peak pulse current • hFE<gt/>40 Specified up to 200mA fo...
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NPN | - | - | 500mA | - | - | SOT-223 | - | Surface Mount | 2W | 150°C | 50hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31A
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SC06755 |
Transistor, NPN, TO220 STMICROELECTRONICS The TIP31A is a 60V NPN Power Transistor manufactured in base island technology with better performance. The transistor is suitable for audio, power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduce...
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NPN | - | - | 3A | - | - | TO-220 | - | Through Hole | 40W | 150°C | 50hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE13007
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SCMJE13007 |
Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W ONSEMI • Transistor Polarity : NPN • Continuous Collector Current : 8A • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Power Dissipation : 80W • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 40hFE
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NPN | - | - | 8A | - | - | TO-220 | - | Through Hole | 80W | 150°C | 40hFE | - | - |