Npn Transistors

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Npn Transistors


Displaying products for Npn Transistors - from our range of leading brand manufacturers.

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  Manufacturer Part No Order Code Description / Manufacturer
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Transistor Polarity Collector Emitter Voltage Max NPN Collector Emitter Voltage Max PNP Continuous Collector Current Base Input Resistor R1 Base Emitter Resistor R2 Transistor Case Style No. of Pins Transistor Mounting Power Dissipation Operating Temperature Max DC Current Gain hFE Min Product Range Qualification
 
 
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DTC114EKAT146
DTC114EKAT146 - Bipolar Pre-Biased / Digital Transistor, Digital, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

SC21497

 
New product
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RoHS

Bipolar Pre-Biased / Digital Transistor, Digital, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

ROHM

The DTC114EKAT146 is a 100mA NPN Digital Transistor with built-in bias resistor. The built-in bias resistor enables the configuration of an inverter circuit without connecting external input resistors. • Only ON/OFF conditions need to be set for operation,...

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Single NPN 50V - 100mA 10kohm 10kohm SC-59 3 Pin Surface Mount 200mW 150°C 30hFE DTC114E Series -
BC846B-13-F
BC846B-13-F - Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 350 mW, SOT-23, Surface Mount

SC21300

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 350 mW, SOT-23, Surface Mount

DIODES INC.

BC846B-13-F is a NPN small signal transistor. • For switching and AF amplifier applications • Power dissipation is 310mW at TA = +25°C • Collector-base breakdown voltage is 80V min at IC = 10µA, TA = +25°C • Collector cutoff current is 15nA max at VCB = 30...

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NPN - - 100mA - - SOT-23 - Surface Mount 310mW 150°C 330hFE BC846 AEC-Q101
BC847BHZGT116
BC847BHZGT116 - Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 350 mW, SOT-23, Surface Mount

SC21496

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 350 mW, SOT-23, Surface Mount

ROHM

• Transistor Polarity : NPN • Continuous Collector Current : 100mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 350mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 200hFE • Qualification : AEC-Q101

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NPN - - 100mA - - SOT-23 - Surface Mount 350mW 150°C 200hFE - AEC-Q101
TIP121
TIP121 - Darlington Transistor, Darlington, NPN, 80 V, 65 W, 5 A, TO-220, 3 Pins

SC21402

 
New product
Data Sheet
+
RoHS

Darlington Transistor, Darlington, NPN, 80 V, 65 W, 5 A, TO-220, 3 Pins

MULTICOMP PRO

The TIP121 is a 80V NPN Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 80V minimum...

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NPN - - - - - - - Through Hole - 150°C - - -
BC817-16
BC817-16 - Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount

SC21378

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount

MULTICOMP PRO

The BC817-16 is a NPN Bipolar Transistor suitable for general purpose medium power amplifiers and switching requiring collector currents up to 1.2mA. • High collector current • High current gain • Low collector-emitter saturation voltage • -65 to 150°C Jun...

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NPN - - 500mA - - SOT-23 - Surface Mount 300mW 150°C 100hFE - -
SS8050CBU
SS8050CBU - Bipolar (BJT) Single Transistor, NPN, 25 V, 1.5 A, 1 W, TO-226AA, Through Hole

SC21492

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, NPN, 25 V, 1.5 A, 1 W, TO-226AA, Through Hole

ONSEMI

The SS8050CBU is a NPN Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8550

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NPN - - 1.5A - - TO-226AA - Through Hole 1W 150°C 120hFE - -
SMMBT3904LT1G
SMMBT3904LT1G - Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount

SC21490

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount

ONSEMI

SMMBT3904LT1G is a NPN general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is 40VDC • AEC-Q101 qualified and PPAP capable • Collector current - continuous is 200mA DC • Collector-base voltage VCBO is 60VDC, emitter-base voltag...

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NPN - - 200mA - - SOT-23 - Surface Mount 300mW 150°C 300hFE - AEC-Q101
BC847W,115
BC847W,115 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount

SC21408

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount

NEXPERIA

The BC847 series NPN general purpose Transistor in SMD plastic package.

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NPN - - 100mA - - SOT-323 - Surface Mount 200mW 150°C 110hFE BC847 AEC-Q101
TIP31C
TIP31C - Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

SC21528

 
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Data Sheet
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RoHS

Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

STMICROELECTRONICS

The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • High Switching Speed • hFE Improved Linearity • hFE Grouping

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NPN - - 3A - - TO-220 - Through Hole 40W 150°C 25hFE - -
PDTC143XT,215
PDTC143XT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm

SC21429

 
New product
Data Sheet
+
RoHS

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm

NEXPERIA

The PDTC143XT is a 4.7 to 10kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP comple...

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Single NPN 50V - 100mA 4.7kohm 10kohm SOT-23 3 Pin Surface Mount 250mW 150°C 50hFE PDTC143X Series -
PDTC123JT,215
PDTC123JT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

SC21428

 
New product
Data Sheet
+
RoHS

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

NEXPERIA

The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...

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Single NPN 50V - 100mA 2.2kohm 47kohm SOT-23 3 Pin Surface Mount 250mW 150°C 100hFE PDTC123J Series -
BC817
BC817 - Transistor, NPN SOT23

SC06580

Transistor, NPN SOT23

NXP

• Transistor Polarity : NPN • Continuous Collector Current : 500mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 100hFE

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NPN - - 500mA - - SOT-23 - Surface Mount 250mW 150°C 100hFE - -
MMUN2216LT1G
MMUN2216LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

SC10967

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

ONSEMI

The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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Single NPN 50V - 100mA 4.7kohm - SOT-23 3 Pin Surface Mount 400mW 150°C 160hFE - -
BC846
BC846 - Transistor, NPN SOT23

SC06582

Transistor, NPN SOT23

NXP

• Transistor Polarity : NPN • Continuous Collector Current : 100mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 110hFE

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NPN - - 100mA - - SOT-23 - Surface Mount 250mW 150°C 110hFE - -
BFS17PE6327HTSA1
BFS17PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

SC11003

Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

INFINEON

The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.

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NPN - - 25mA - - SOT-23 - Surface Mount 280mW 150°C 70hFE - AEC-Q101
BC817K-40VL
BC817K-40VL - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

SC15928

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

NEXPERIA

• Transistor Polarity : NPN • Continuous Collector Current : 500mA • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Power Dissipation : 350mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 250hFE • Product Range : BC817K • Qualification : AEC-Q101

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NPN - - 500mA - - TO-236AB - Surface Mount 350mW 150°C 250hFE BC817K AEC-Q101
BUV48A
BUV48A - Transistor, NPN, TO247

SC06801

Transistor, NPN, TO247

MOSPEC

• Transistor Polarity : NPN • Transistor Mounting : Through Hole • Power Dissipation : 150W

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NPN - - - - - - - Through Hole 150W - - - -
MMUN2211LT1G
MMUN2211LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio)

SC19267

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio)

ONSEMI

The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single trans...

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Single NPN 50V - 100mA 10kohm 10kohm SOT-23 3 Pin Surface Mount 400mW 150°C 35hFE - -
MJ15015G
MJ15015G - Transistor, NPN, TO3

SC06780

Transistor, NPN, TO3

ONSEMI

The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverte...

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NPN - - 15A - - TO-3 - Through Hole 180W 200°C 70hFE - -
BCW60B
BCW60B - Transistor, NPN SOT23

SC06591

Transistor, NPN SOT23

NXP

The BCW60B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • AB marking code

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NPN - - 100mA - - SOT-23 - Surface Mount 250mW 150°C 180hFE - -
TTIP41C
TTIP41C - Transistor, NPN, TO220

SC06757

Transistor, NPN, TO220

MULTICOMP PRO

• Transistor Polarity : NPN • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole

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NPN - - - - - TO-220 - Through Hole - - - - -
SMBT2222A
SMBT2222A - Transistor, NPN, SOT23

SC10624

Transistor, NPN, SOT23

INFINEON

• Transistor Polarity : NPN • Continuous Collector Current : 600mA • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 330mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 100hFE • Qualification : AEC-Q101

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NPN - - 600mA - - SOT-23 - Surface Mount 330mW 150°C 100hFE - AEC-Q101
FZT658
FZT658 - Transistor, NPN, SOT223

SC10987

Transistor, NPN, SOT223

DIODES INC.

The FZT658 is a NPN silicon planar high voltage Bipolar Transistor offers 500mA high continuous current and less-than 250mV low saturation voltage VCE (SAT) @ 50mA. • UL94V-0 Flammability rating • 1A Peak pulse current • hFE<gt/>40 Specified up to 200mA fo...

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NPN - - 500mA - - SOT-223 - Surface Mount 2W 150°C 50hFE - -
TIP31A
TIP31A - Transistor, NPN, TO220

SC06755

Transistor, NPN, TO220

STMICROELECTRONICS

The TIP31A is a 60V NPN Power Transistor manufactured in base island technology with better performance. The transistor is suitable for audio, power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduce...

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NPN - - 3A - - TO-220 - Through Hole 40W 150°C 50hFE - -
MJE13007
MJE13007 - Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

SCMJE13007

Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

ONSEMI

• Transistor Polarity : NPN • Continuous Collector Current : 8A • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Power Dissipation : 80W • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 40hFE

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NPN - - 8A - - TO-220 - Through Hole 80W 150°C 40hFE - -