Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRFI830GPBF
IRFI830GPBF - Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole

SC11142

Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole

VISHAY

The IRFI830GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The mouldin...

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N Channel 500V 3.1A 1.5ohm TO-220FP Through Hole 10V 4V 32W 3Pins 150°C - -
STP3NK60ZFP
STP3NK60ZFP - Power MOSFET, N Channel, 600 V, 2.4 A, 3.6 ohm, TO-220FP, Through Hole

SC09919

Power MOSFET, N Channel, 600 V, 2.4 A, 3.6 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 2.4A • Drain Source On State Resistance : 3.6ohm • Transistor Case Style : TO-220FP • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 20W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 600V 2.4A 3.6ohm TO-220FP Through Hole 10V 3.75V 20W 3Pins 150°C - -
BC856B
BC856B - Transistor, PNP SOT23

SC06599

Transistor, PNP SOT23

NXP

• Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - SOT-23 Surface Mount - - 250mW 3Pins 150°C - -
RFP70N06
RFP70N06 - Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole

SC08223

Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole

ONSEMI

The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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N Channel 60V 70A 0.014ohm - Through Hole 10V 4V 150W 3Pins 175°C - -
P0102DA 1AA3
P0102DA 1AA3 - Thyristor, 0.8A, 400V, TO92

SC09960

Thyristor, 0.8A, 400V, TO92

STMICROELECTRONICS

The P0102DA 1AA3 is a standard sensitive Silicon Controlled Rectifier (SCR) with highly sensitive triggering level. It is suitable for all applications where available gate current is limited, such as ground fault circuit interrupters, pilot circuits in so...

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- - - - - - - - - 3Pins 125°C - -
BC847C
BC847C - Transistor, NPN, SOT23

SC06615

Transistor, NPN, SOT23

NXP

• Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - SOT-23 Surface Mount - - 250mW 3Pins 150°C - -
MMBF170
MMBF170 - Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

SC06989

Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switch...

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N Channel 60V 500mA 5ohm - Surface Mount 10V 2.1V 300mW 3Pins 150°C - -
IRF2804PBF
IRF2804PBF - Power MOSFET, N Channel, 40 V, 280 A, 2300 µohm, TO-220AB, Through Hole

SC08252

Power MOSFET, N Channel, 40 V, 280 A, 2300 µohm, TO-220AB, Through Hole

INFINEON

The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...

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N Channel 40V 280A 2300µohm - Through Hole 10V 4V 330W 3Pins 175°C - -
MBR1060G
MBR1060G - Schottky Rectifier, 60 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

SC07391

Schottky Rectifier, 60 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

ONSEMI

The MBR1060G is a SWITCHMODE™ Schottky Barrier Power Rectifier with moulded epoxy case. • All external surfaces corrosion-resistant • Guard-ring for stress protection • Low forward voltage • Low power loss/high efficiency • High surge capacity • Low stored...

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- - - - - - - - - 2Pins 175°C - -
1N5344BG
1N5344BG - Zener Single Diode, 8.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07172

Zener Single Diode, 8.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
1N5818
1N5818 - Schottky Rectifier, 30 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 875 mV

SC07408

Schottky Rectifier, 30 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 875 mV

STMICROELECTRONICS

The 1N5818 is an axial low-drop power Schottky Rectifier suitable for SWITCHMODE™ power supplies and high frequency DC to DC converters. It is intended for use in low voltage, high frequency inverters, free-wheeling, polarity protection and small battery c...

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- - - - - - - - - 2Pins 125°C - -
TBD438
TBD438 - Transistor, PNP, TO126

SC06730

Transistor, PNP, TO126

MULTICOMP PRO

• Transistor Mounting : Through Hole • No. of Pins : 3Pins

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- - - - - Through Hole - - - 3Pins - - -
ZVN4106F
ZVN4106F - Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount

SC07002

Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammability rating

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N Channel 60V 200mA 2.5ohm SOT-23 Surface Mount 10V 3V 330mW 3Pins 150°C - -
FQP17P06
FQP17P06 - Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole

SC08206

Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole

ONSEMI

The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...

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P Channel 60V 17A 0.12ohm - Through Hole 10V 4V 79W 3Pins 175°C - -
1N5383BG
1N5383BG - Zener Single Diode, 150 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07206

Zener Single Diode, 150 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5383BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and lead is readily solderable. The voltage regulator has tight limits and better...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
MUR8100EG
MUR8100EG - Fast / Ultrafast Diode, 1 kV, 8 A, Single, 1.8 V, 75 ns, 100 A

SC08156

Fast / Ultrafast Diode, 1 kV, 8 A, Single, 1.8 V, 75 ns, 100 A

ONSEMI

The MUR8100EG is a Switch-mode Power Rectifier with epoxy moulded case and all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The ultrafast recovery power rectifier features high temperature glass passivated junctio...

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- - - - - - - - - - 175°C - -
STW14NK50Z.
STW14NK50Z. - Power MOSFET, N Channel, 500 V, 14 A, 0.34 ohm, TO-247, Through Hole

SC06408

Power MOSFET, N Channel, 500 V, 14 A, 0.34 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 14A • Drain Source On State Resistance : 0.34ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 150W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 500V 14A 0.34ohm TO-247 Through Hole 10V 3.75V 150W 3Pins 150°C - -
BC847C
BC847C - Transistor, NPN, SOT23

SC10952

Transistor, NPN, SOT23

MULTICOMP PRO

The BC847C is a NPN silicon epitaxial planar Single Transistor in a surface-mount package suitable for general purpose applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96...

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- - - - - Surface Mount - - 250mW 3Pins 150°C Multicomp Pro Transistors NPN -
IRFP064NPBF
IRFP064NPBF - Power MOSFET, N Channel, 55 V, 98 A, 8000 µohm, TO-247AC, Through Hole

SC11166

Power MOSFET, N Channel, 55 V, 98 A, 8000 µohm, TO-247AC, Through Hole

INFINEON

The IRFP064NPBF is utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the ...

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N Channel 55V 98A 8000µohm - Through Hole 10V 4V 150W 3Pins 175°C - -
FDD4243
FDD4243 - Power MOSFET, P Channel, 40 V, 14 A, 0.044 ohm, TO-252 (DPAK), Surface Mount

SC11198

Power MOSFET, P Channel, 40 V, 14 A, 0.044 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The FDD4243 is a P-channel MOSFET produced using PowerTrench® technology to deliver low RDS (ON) and optimized Bvdss capability to offer superior performance benefit in the applications. • High performance Trench technology for extremely low RDS (ON)

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P Channel 40V 14A 0.044ohm - Surface Mount 20V 1.6V 42W 3Pins 150°C - -
MMSD4148T1G
MMSD4148T1G - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 2 A

SC11271

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 2 A

ONSEMI

MMSD4148T1G is a high conductance fast small signal diode suitable for general usage and many different applications. • 400mW power dissipation • 312°C/W junction-to-ambient thermal resistance • 4pF total capacitance

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BAT42
BAT42 - Small Signal Schottky Diode, Single, 30 V, 200 mA, 400 mV, 4 A, 125 °C

SC07324

Small Signal Schottky Diode, Single, 30 V, 200 mA, 400 mV, 4 A, 125 °C

STMICROELECTRONICS

The BAT42 is a metal to silicon small signal Schottky Diode feature very low turn-on voltage fast switching. This device have integrated protection against excessive voltage such as electrostatic discharge. Suitable for general purpose. • 200mW Power dissi...

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- - - - - - - - - 2Pins 125°C BAT42 Series -
1N5408RL
1N5408RL - Standard Recovery Diode, 1 kV, 3 A, Single, 1.7 V, 200 A

SC07344

Standard Recovery Diode, 1 kV, 3 A, Single, 1.7 V, 200 A

ONSEMI

The 1N5408RL is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications. • Cathode is indicated by polarity band • High current to small size • High surge current...

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IRF9520NPBF
IRF9520NPBF - Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole

SC08219

Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole

INFINEON

The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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P Channel 100V 6.8A 0.48ohm TO-220AB Through Hole 10V 4V 48W 3Pins 175°C - -
VS-2KBB20R
VS-2KBB20R - Bridge Rectifier, Single Phase, 200 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

SC07481

Bridge Rectifier, Single Phase, 200 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

VISHAY

The VS-2KBB20R is a single-phase Bridge Rectifier with high surge current capability and compact construction. It consisting of four silicon diodes in a plastic encapsulation. This bridge rectifier is suitable for printed circuit board mounting. • 80V RMS ...

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- - - - - - - - - 4Pins 150°C VS-2KBB Series -