Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520NPBF
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SC08219 |
Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole INFINEON The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | 100V | 6.8A | 0.48ohm | TO-220AB | Through Hole | 10V | 4V | 48W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3440
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SC06794 |
Transistor, NPN TO39 MULTICOMP PRO Silicon planar NPN transistor used in high voltage and high power amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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- | - | - | - | TO-39 | Through Hole | - | - | 5W | 3Pins | 200°C | Multicomp Pro Bipolar Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP12NM50
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SC11151 |
Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole STMICROELECTRONICS The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...
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N Channel | 550V | 12A | 0.35ohm | TO-220 | Through Hole | 10V | 4V | 160W | 3Pins | 150°C | STP | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-2KBB20R
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SC07481 |
Bridge Rectifier, Single Phase, 200 V, 1.9 A, Through Hole, 4 Pins, 1.1 V VISHAY The VS-2KBB20R is a single-phase Bridge Rectifier with high surge current capability and compact construction. It consisting of four silicon diodes in a plastic encapsulation. This bridge rectifier is suitable for printed circuit board mounting. • 80V RMS ...
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | VS-2KBB Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC177B
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SC06648 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177B is a low power silicon planar epitaxial Bipolar Transistor with TO-18 metal can package. • 50V Collector-base voltage • 175°C/W Junction-to-case thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty...
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- | - | - | - | TO-18 | Through Hole | - | - | 600mW | 3Pins | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C5V6.
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SC05697 |
Zener Single Diode, 5.6 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP9240
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SC06075 |
Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 150W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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P Channel | 200V | 12A | 0.5ohm | TO-247AC | Through Hole | 10V | 2V | 150W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU5305PBF
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SC11065 |
Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating
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P Channel | 55V | 22A | 0.065ohm | - | Through Hole | 10V | 4V | 69W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GF1D-E3/67A
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SC11338 |
Standard Recovery Diode, 200 V, 1 A, Single, 1.1 V, 3 µs, 30 A VISHAY The GF1D-E3/67A is a surface mount glass passivated Rectifier Diode with matte tin-plated leads terminals, UL94V-0 flame-rated moulded epoxy over glass body case and colour band denotes cathode end polarity. Superectifier structure for high reliability con...
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- | - | - | - | - | - | - | - | - | 2Pins | 175°C | SUPERECTIFIER Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SR106
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SC07443 |
Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV TAIWAN SEMICONDUCTOR The SR106 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | SR1xx Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP102G
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SC06859 |
Darlington Transistor, TO220 ONSEMI The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors
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- | - | - | - | - | Through Hole | - | - | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5366BG
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SC07192 |
Zener Single Diode, 39 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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- | - | - | - | - | - | - | - | 5W | 2Pins | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DB3
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SC07604 |
DIAC / SIDAC, 28 V, 36 V, 50 µA, DO-35, 2 Pins, DIAC STMICROELECTRONICS The DB3 from STMicroelectronics is a axial leaded DIAC in DO-35 package. This device functions as a trigger diode with a fixed voltage reference and can be used in conjunction with triacs for simplified gate control circuits and as a starting element in fl...
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- | - | - | - | - | - | - | - | - | 2Pins | 125°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP240PBF
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SC10643 |
Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole VISHAY The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 20A | 0.18ohm | TO-247AC | Through Hole | 10V | 4V | 150W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK80Z.
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SC06405 |
Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 160W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 800V | 9A | 0.78ohm | TO-247 | Through Hole | 10V | 3.75V | 160W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15033G
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SC06827 |
Transistor, PNP, TO220 ONSEMI The MJE15033G is a PNP Power Transistor designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth and high DC current gain. • 62.5°C/W Junction-to-ambient thermal resistance • 2.5°C/W Junction-to-case thermal resistance
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- | - | - | - | TO-220 | Through Hole | - | - | 50W | 3Pins | 150°C | MJxxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU806
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SC06858 |
Darlington Transistor, TO220 MULTICOMP PRO The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...
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- | - | - | - | - | Through Hole | - | - | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120
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SC10999 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...
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- | - | - | - | - | Through Hole | - | - | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5361BG
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SC07188 |
Zener Single Diode, 27 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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- | - | - | - | - | - | - | - | 5W | 2Pins | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4321PBF
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SC11179 |
Power MOSFET, N Channel, 150 V, 78 A, 0.0155 ohm, TO-247AC, Through Hole INFINEON The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...
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N Channel | 150V | 78A | 0.0155ohm | TO-247AC | Through Hole | 10V | 5V | 310mW | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4306A
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SC06968 |
Power MOSFET, N Channel, 60 V, 1.1 A, 0.33 ohm, TO-226AA, Through Hole DIODES INC. ZVN4306A is a N-channel enhancement mode vertical DMOS FET. It is ideal for DC – DC converters. • Drain-source voltage is 60V at TA = 25°C • Gate-source voltage is ±20V at TA = 25°C • Continuous drain current is 1.1A at TA = 25°C • Practical continuous dra...
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N Channel | 60V | 1.1A | 0.33ohm | TO-226AA | Through Hole | 10V | 3V | 850mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002
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SC11027 |
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount ONSEMI The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...
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N Channel | 60V | 115mA | 7.5ohm | - | Surface Mount | 10V | 2.1V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX85-C15
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SC07119 |
Zener Single Diode, 15 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole ONSEMI The BZX85-C15 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range
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- | - | - | - | - | - | - | - | 1W | 2Pins | 200°C | BZX85 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UF5406-E3/54
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SC11391 |
Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 75 ns, 150 A VISHAY The UF5406-E3/54 is a soft-recovery ultra-fast Plastic Rectifier with solderable matte tin-plated terminals. It is suitable for use in high frequency rectification and free-wheeling application in switching mode converters and inverters. • Colour band deno...
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- | - | - | - | - | - | - | - | - | - | 150°C | UF540 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STTH6003CW
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SC11398 |
Fast / Ultrafast Diode, 300 V, 30 A, Dual Common Cathode, 1.25 V, 55 ns, 300 A STMICROELECTRONICS The STTH6003CW is a high frequency secondary Rectifier Diode for high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. • Combines...
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- | - | - | - | - | - | - | - | - | - | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























