Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRF9520NPBF
IRF9520NPBF - Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole

SC08219

Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole

INFINEON

The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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P Channel 100V 6.8A 0.48ohm TO-220AB Through Hole 10V 4V 48W 3Pins 175°C - -
2N3440
2N3440 - Transistor, NPN TO39

SC06794

Transistor, NPN TO39

MULTICOMP PRO

Silicon planar NPN transistor used in high voltage and high power amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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- - - - TO-39 Through Hole - - 5W 3Pins 200°C Multicomp Pro Bipolar Transistors -
STP12NM50
STP12NM50 - Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole

SC11151

Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...

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N Channel 550V 12A 0.35ohm TO-220 Through Hole 10V 4V 160W 3Pins 150°C STP -
VS-2KBB20R
VS-2KBB20R - Bridge Rectifier, Single Phase, 200 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

SC07481

Bridge Rectifier, Single Phase, 200 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

VISHAY

The VS-2KBB20R is a single-phase Bridge Rectifier with high surge current capability and compact construction. It consisting of four silicon diodes in a plastic encapsulation. This bridge rectifier is suitable for printed circuit board mounting. • 80V RMS ...

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- - - - - - - - - 4Pins 150°C VS-2KBB Series -
BC177B
BC177B - Transistor, PNP, TO18

SC06648

Transistor, PNP, TO18

MULTICOMP PRO

The BC177B is a low power silicon planar epitaxial Bipolar Transistor with TO-18 metal can package. • 50V Collector-base voltage • 175°C/W Junction-to-case thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty...

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- - - - TO-18 Through Hole - - 600mW 3Pins 200°C - -
BZX79-C5V6.
BZX79-C5V6. - Zener Single Diode, 5.6 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05697

Zener Single Diode, 5.6 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
IRFP9240
IRFP9240 - Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole

SC06075

Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 150W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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P Channel 200V 12A 0.5ohm TO-247AC Through Hole 10V 2V 150W 3Pins 150°C - -
IRFU5305PBF
IRFU5305PBF - Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole

SC11065

Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

• Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating

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P Channel 55V 22A 0.065ohm - Through Hole 10V 4V 69W 3Pins 175°C - -
GF1D-E3/67A
GF1D-E3/67A - Standard Recovery Diode, 200 V, 1 A, Single, 1.1 V, 3 µs, 30 A

SC11338

Standard Recovery Diode, 200 V, 1 A, Single, 1.1 V, 3 µs, 30 A

VISHAY

The GF1D-E3/67A is a surface mount glass passivated Rectifier Diode with matte tin-plated leads terminals, UL94V-0 flame-rated moulded epoxy over glass body case and colour band denotes cathode end polarity. Superectifier structure for high reliability con...

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- - - - - - - - - 2Pins 175°C SUPERECTIFIER Series -
SR106
SR106 - Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV

SC07443

Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV

TAIWAN SEMICONDUCTOR

The SR106 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...

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- - - - - - - - - 2Pins 150°C SR1xx Series -
TIP102G
TIP102G - Darlington Transistor, TO220

SC06859

Darlington Transistor, TO220

ONSEMI

The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors

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- - - - - Through Hole - - - 3Pins 150°C - -
1N5366BG
1N5366BG - Zener Single Diode, 39 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07192

Zener Single Diode, 39 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
DB3
DB3 - DIAC / SIDAC, 28 V, 36 V, 50 µA, DO-35, 2 Pins, DIAC

SC07604

DIAC / SIDAC, 28 V, 36 V, 50 µA, DO-35, 2 Pins, DIAC

STMICROELECTRONICS

The DB3 from STMicroelectronics is a axial leaded DIAC in DO-35 package. This device functions as a trigger diode with a fixed voltage reference and can be used in conjunction with triacs for simplified gate control circuits and as a starting element in fl...

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- - - - - - - - - 2Pins 125°C - -
IRFP240PBF
IRFP240PBF - Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

SC10643

Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

VISHAY

The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 200V 20A 0.18ohm TO-247AC Through Hole 10V 4V 150W 3Pins 150°C - -
STW10NK80Z.
STW10NK80Z. - Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

SC06405

Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 160W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 800V 9A 0.78ohm TO-247 Through Hole 10V 3.75V 160W 3Pins 150°C - -
MJE15033G
MJE15033G - Transistor, PNP, TO220

SC06827

Transistor, PNP, TO220

ONSEMI

The MJE15033G is a PNP Power Transistor designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth and high DC current gain. • 62.5°C/W Junction-to-ambient thermal resistance • 2.5°C/W Junction-to-case thermal resistance

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- - - - TO-220 Through Hole - - 50W 3Pins 150°C MJxxxx -
BU806
BU806 - Darlington Transistor, TO220

SC06858

Darlington Transistor, TO220

MULTICOMP PRO

The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...

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- - - - - Through Hole - - - 3Pins 150°C - -
TIP120
TIP120 - Darlington Transistor, TO220

SC10999

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...

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- - - - - Through Hole - - - 3Pins 150°C - -
1N5361BG
1N5361BG - Zener Single Diode, 27 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07188

Zener Single Diode, 27 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
IRFP4321PBF
IRFP4321PBF - Power MOSFET, N Channel, 150 V, 78 A, 0.0155 ohm, TO-247AC, Through Hole

SC11179

Power MOSFET, N Channel, 150 V, 78 A, 0.0155 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...

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N Channel 150V 78A 0.0155ohm TO-247AC Through Hole 10V 5V 310mW 3Pins 175°C - -
ZVN4306A
ZVN4306A - Power MOSFET, N Channel, 60 V, 1.1 A, 0.33 ohm, TO-226AA, Through Hole

SC06968

Power MOSFET, N Channel, 60 V, 1.1 A, 0.33 ohm, TO-226AA, Through Hole

DIODES INC.

ZVN4306A is a N-channel enhancement mode vertical DMOS FET. It is ideal for DC – DC converters. • Drain-source voltage is 60V at TA = 25°C • Gate-source voltage is ±20V at TA = 25°C • Continuous drain current is 1.1A at TA = 25°C • Practical continuous dra...

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N Channel 60V 1.1A 0.33ohm TO-226AA Through Hole 10V 3V 850mW 3Pins 150°C - -
2N7002
2N7002 - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

SC11027

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...

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N Channel 60V 115mA 7.5ohm - Surface Mount 10V 2.1V 200mW 3Pins 150°C - -
BZX85-C15
BZX85-C15 - Zener Single Diode, 15 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

SC07119

Zener Single Diode, 15 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

ONSEMI

The BZX85-C15 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range

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- - - - - - - - 1W 2Pins 200°C BZX85 Series -
UF5406-E3/54
UF5406-E3/54 - Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 75 ns, 150 A

SC11391

Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 75 ns, 150 A

VISHAY

The UF5406-E3/54 is a soft-recovery ultra-fast Plastic Rectifier with solderable matte tin-plated terminals. It is suitable for use in high frequency rectification and free-wheeling application in switching mode converters and inverters. • Colour band deno...

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- - - - - - - - - - 150°C UF540 -
STTH6003CW
STTH6003CW - Fast / Ultrafast Diode, 300 V, 30 A, Dual Common Cathode, 1.25 V, 55 ns, 300 A

SC11398

Fast / Ultrafast Diode, 300 V, 30 A, Dual Common Cathode, 1.25 V, 55 ns, 300 A

STMICROELECTRONICS

The STTH6003CW is a high frequency secondary Rectifier Diode for high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. • Combines...

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- - - - - - - - - - 175°C - -