Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Diode Configuration | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Forward Surge Current | Operating Temperature Max | Diode Case Style | No. of Pins | Reverse Recovery Time | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT43
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SC07325 |
Small Signal Schottky Diode, Single, 30 V, 200 mA, 1 V, 4 A, 125 °C STMICROELECTRONICS The BAT43 is a general purpose, metal to silicon small signal Schottky Diode featuring very low turn-on voltage fast switching. This device have integrated protection against excessive voltage such as electrostatic discharge. • 200mW Power dissipation • 30...
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Single | 30V | 200mA | 1V | 4A | 125°C | DO-204AH | 2Pins | 5ns | Through Hole | BAT43 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPSA42
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SC06677 |
Transistor, NPN, TO92 ONSEMI The MPSA42 is a NPN high voltage amplifier in TO-92 package. This device is designed for applications as a video output and other high voltage applications. • Collector to emitter voltage (Vce) of 300V • Collector to emitter saturation voltage of 500mV at ...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BDV67B
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SC06869 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...
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1+ £1.83 (£2.20) 10+ £1.71 (£2.05) 100+ £1.41 (£1.69) 500+ £1.28 (£1.54) |
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5377BG
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SC07202 |
Zener Single Diode, 91 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5377BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...
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- | - | - | - | - | 200°C | 017AA | 2Pins | - | Through Hole | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-C15
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SC11217 |
Zener Single Diode, 15 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series from NXP are surface mount low power voltage regulator diodes which are hermetically sealed in SOD80C package. The device features non repetitive peak reverse power dissipation ≤ 40 W, total power dissipation≤ 500mW and low differential re...
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- | - | - | - | - | 200°C | SOD-80C | 2Pins | - | Surface Mount | BZV55 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830PBF
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SC11101 |
Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C56
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SC11233 |
Zener Single Diode, 56 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | - | - | 200°C | SOD-80C | 2Pins | - | Surface Mount | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC08528 |
Transistor, PNP, TO126 MULTICOMP PRO The MJE350 is a -300V PNP Plastic Medium Power Transistor designed for use line-operated applications such as low power, line operated series pass and switching regulator requiring PNP capability. • Collector-base voltage(Vcbo = 300V) • Emitter-base voltag...
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1+ £0.39 (£0.47) 10+ £0.34 (£0.41) 100+ £0.29 (£0.35) 500+ £0.25 (£0.30) |
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ21194G
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SC06817 |
Transistor, NPN, TO3 ONSEMI The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hig...
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1+ £8.20 (£9.84) 10+ £7.04 (£8.45) 100+ £6.16 (£7.39) |
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- | - | - | - | - | 200°C | - | 2Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX853.
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SCZTX853 |
NPN 200V 4A 1200mW TO92 Q23 Transistor DIODES INC. • Operating Temperature Max : 200°C • No. of Pins : 3Pins
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- | - | - | - | - | 200°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C4V7
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SC11208 |
Zener Single Diode, 4.7 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP • Operating Temperature Max : 200°C • Diode Case Style : SOD-80C • No. of Pins : 2Pins • Diode Mounting : Surface Mount • Product Range : BZV55
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- | - | - | - | - | 200°C | SOD-80C | 2Pins | - | Surface Mount | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STTH3012W
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SC11401 |
Standard Recovery Diode, 1.2 kV, 30 A, Single, 1.3 V, 57 ns, 210 A STMICROELECTRONICS The STTH3012W is an Ultrafast Recovery Diode with epoxy (UL94V-0) case. The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ide...
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Single | 1.2kV | 30A | 1.3V | 210A | 175°C | TO-247 | 2Pins | 57ns | - | STTH3 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP264PBF
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SC11174 |
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole VISHAY The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MCL4148-TR3
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SC11251 |
Small Signal Diode, Single, 100 V, 150 mA, 1 V, 4 ns, 2 A VISHAY The MCL4148 from Vishay is surface mount, small signal fast switching diode. The silicon epitaxial planar diode features unidirectional single configuration, hermetic sealed compact size facilitates space saving on boards. • Automotive grade AEC-Q101 quali...
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Single | 100V | 150mA | 1V | 2A | 175°C | MicroMELF | 2Pins | 4ns | Surface Mount | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAS85
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SC11299 |
Small Signal Diode, 30 V, 200 mA, 320 mV, 5 A NXP • Repetitive Peak Reverse Voltage : 30V • Average Forward Current : 200mA • Forward Voltage Max : 320mV • Forward Surge Current : 5A • Operating Temperature Max : 125°C • Diode Case Style : SOD-80C • No. of Pins : 2Pins • Diode Mounting : Surface Mount
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- | 30V | 200mA | 320mV | 5A | 125°C | SOD-80C | 2Pins | - | Surface Mount | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4368PBF
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SC11167 |
Power MOSFET, N Channel, 75 V, 350 A, 1850 µohm, TO-247AC, Through Hole INFINEON The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C16.
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SC05708 |
Zener Single Diode, 16 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Operating Temperature Max : 200°C • Diode Case Style : DO-35 • No. of Pins : 2Pins • Product Range : BZX79
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- | - | - | - | - | 200°C | DO-35 | 2Pins | - | - | BZX79 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-40
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SC06597 |
Transistor, PNP SOT23 NXP • Operating Temperature Max : 150°C • No. of Pins : 3Pins
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4923G
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SC06736 |
Transistor, NPN, TO126 ONSEMI The 2N4923G is a 1A NPN medium-power Silicon Transistor designed for driver circuits, switching and amplifier applications. • Low saturation voltage • Excellent power dissipation due to thermopad construction • Excellent safe operating area • Complement to...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | 2NXXXX | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Z0107MA
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SC07601 |
Triac, 0.8A, 600V, TO92 STMICROELECTRONICS • Operating Temperature Max : 125°C • No. of Pins : 3Pins
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- | - | - | - | - | 125°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250NPBF
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SC11079 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | HEXFET Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Z0103MA
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SC07599 |
Triac, 0.8A, 600V, TO92 STMICROELECTRONICS • Operating Temperature Max : 125°C • No. of Pins : 3Pins
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- | - | - | - | - | 125°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA24N60.
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SC06316 |
Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole ONSEMI • Operating Temperature Max : 150°C • No. of Pins : 3Pins
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15032G
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SC06818 |
Transistor, NPN, TO220 ONSEMI The MJE15032G is a 250V Silicon NPN Complementary Plastic Power Transistor designed for use as high frequency drivers in audio amplifiers. • High DC current gain • High current gain bandwidth • Epoxy meets UL 94V-0 rating
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SR104
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SC07442 |
Small Signal Schottky Diode, Single, 40 V, 1 A, 550 mV, 60 A, 125 °C TAIWAN SEMICONDUCTOR The SR104 is a Schottky Barrier Rectifier with moulded compound case and matte tin-plated lead terminals. It features high reliability, low power loss and high surge current reliability. • Low forward voltage drop • High current capability • High efficienc...
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Single | 40V | 1A | 550mV | 60A | 125°C | DO-41 (DO-204AL) | 2Pins | - | Through Hole | SR1xx Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























