Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRL540NPBF
IRL540NPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

SC11124

Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

INFINEON

The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 100V 36A 0.044ohm Through Hole 10V 2V 140W 3Pins 175°C - -
BA159G
BA159G - Standard Recovery Diode, 1 kV, 1 A, Single, 1.2 V, 250 ns, 30 A

SC07375

Standard Recovery Diode, 1 kV, 1 A, Single, 1.2 V, 250 ns, 30 A

TAIWAN SEMICONDUCTOR

The BA159G is a Glass-passivated Fast Recovery Rectifier with moulded plastic with solderable axial leads. • Colour band denotes cathode end polarity • UL94V-0 Epoxy flammability rating • Low forward voltage drop • High current capability • High reliabilit...

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- - - - - - - - 2Pins 150°C BA15xG Series -
BC857,215
BC857,215 - Transistor, PNP SOT23

SC06600

Transistor, PNP SOT23

NXP

• Transistor Mounting : Surface Mount • Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - Surface Mount - - 250mW 3Pins 150°C - -
2N2222
2N2222 - Transistor, NPN, TO18

SC06697

Transistor, NPN, TO18

MULTICOMP PRO

The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. This NPN silicon planar switching transistor is used for switching, linear DC power supply and VHF amplifier applications. • Collector emitter breakdo...

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- - - - Through Hole - - 1.2W 3Pins 200°C - -
BTA16-600SWRG
BTA16-600SWRG - Triac, 16A, 600V, TO220AB

SC07586

Triac, 16A, 600V, TO220AB

STMICROELECTRONICS

The BTA16-600SWRG is a logic level standard TRIAC for general purpose mains power AC switching. • Medium Current • Low Thermal Resistance with Clip Bonding • Low Thermal Resistance Insulation Ceramic for Insulated BTA • High Commutation (4Q) or Very High C...

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- - - - - - - - 3Pins 125°C - -
MJ15023G
MJ15023G - Transistor, PNP, TO3

SC06786

Transistor, PNP, TO3

ONSEMI

The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...

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- - - - Through Hole - - 250W 2Pins 200°C - -
ZTX614
ZTX614 - Darlington Transistor, E-Line

SC06839

Darlington Transistor, E-Line

DIODES INC.

The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range

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- - - - Through Hole - - - 3Pins 200°C - -
BDX33C
BDX33C - Darlington Transistor, TO220

SC06854

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current

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- - - - Through Hole - - - 3Pins 150°C - -
ZTX553
ZTX553 - Transistor, PNP, E-Line

SC10973

Transistor, PNP, E-Line

DIODES INC.

The ZTX553 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -120V collector-base voltage. • -55 to 200°C Operating temperature range

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- - - - Through Hole - - 1W 3Pins 200°C - -
1N6263
1N6263 - Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C

SC11331

Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C

STMICROELECTRONICS

High performance devices for UHF/VHF applications, detecting, mixing, switching etc. Low turn-off voltage, as low as 0.34V @ 1mA. Pico-second switching speed. High breakdown voltage, up to 70V.

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- - - - - - - - 2Pins 200°C - -
GSIB1560-E3/45
GSIB1560-E3/45 - Bridge Rectifier, Single Phase, 600 V, 15 A, SIP, 4 Pins, 950 mV

SC11485

Bridge Rectifier, Single Phase, 600 V, 15 A, SIP, 4 Pins, 950 mV

VISHAY

The GSIB1560-E3/45 is a single-phase single in-line Bridge Rectifier with matte tin-plated leads terminals and UL94V-0 flame rated moulding compound case. The bridge rectifier features glass passivated chip junction, high surge current capability and high ...

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- - - - - - - - 4Pins 150°C - -
2N5195G
2N5195G - Transistor, PNP, TO126

SC06743

Transistor, PNP, TO126

ONSEMI

The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192

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- - - - Through Hole - - 40W 3Pins 150°C - -
BTA40-600B
BTA40-600B - Triac, 40A, 600V, RD-91

SC07592

Triac, 40A, 600V, RD-91

STMICROELECTRONICS

The BTA40-600B is a TRIAC for phase control operations in light dimmers, motor speed controllers. • Low Thermal Resistance with Clip Bonding • High Commutation Capability

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- - - - - - - - 3Pins 125°C - -
GSIB1580-E3/45
GSIB1580-E3/45 - Bridge Rectifier, Single Phase, 800 V, 15 A, SIP, 4 Pins, 950 mV

SC11489

Bridge Rectifier, Single Phase, 800 V, 15 A, SIP, 4 Pins, 950 mV

VISHAY

The GSIB1580-E3/45 is a 4-pin single-phase in-line Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for home appliances and office equipment applications. • UL94V-0 Flammability r...

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- - - - - - - - 4Pins 150°C - -
1N5355BG
1N5355BG - Zener Single Diode, 18 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07182

Zener Single Diode, 18 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5355BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...

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- - - - - - - 5W 2Pins 200°C 1N53 Series -
MJE15033G
MJE15033G - Transistor, PNP, TO220

SC06827

Transistor, PNP, TO220

ONSEMI

The MJE15033G is a PNP Power Transistor designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth and high DC current gain. • 62.5°C/W Junction-to-ambient thermal resistance • 2.5°C/W Junction-to-case thermal resistance

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- - - - Through Hole - - 50W 3Pins 150°C MJxxxx -
BU806
BU806 - Darlington Transistor, TO220

SC06858

Darlington Transistor, TO220

MULTICOMP PRO

The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...

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- - - - Through Hole - - - 3Pins 150°C - -
TIP102G
TIP102G - Darlington Transistor, TO220

SC06859

Darlington Transistor, TO220

ONSEMI

The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors

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- - - - Through Hole - - - 3Pins 150°C - -
ZVN4306A
ZVN4306A - Power MOSFET, N Channel, 60 V, 1.1 A, 0.33 ohm, TO-226AA, Through Hole

SC06968

Power MOSFET, N Channel, 60 V, 1.1 A, 0.33 ohm, TO-226AA, Through Hole

DIODES INC.

ZVN4306A is a N-channel enhancement mode vertical DMOS FET. It is ideal for DC – DC converters. • Drain-source voltage is 60V at TA = 25°C • Gate-source voltage is ±20V at TA = 25°C • Continuous drain current is 1.1A at TA = 25°C • Practical continuous dra...

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N Channel 60V 1.1A 0.33ohm Through Hole 10V 3V 850mW 3Pins 150°C - -
TIP120
TIP120 - Darlington Transistor, TO220

SC10999

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...

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- - - - Through Hole - - - 3Pins 150°C - -
2N7002
2N7002 - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

SC11027

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...

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N Channel 60V 115mA 7.5ohm Surface Mount 10V 2.1V 200mW 3Pins 150°C - -
BZX85-C15
BZX85-C15 - Zener Single Diode, 15 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

SC07119

Zener Single Diode, 15 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

ONSEMI

The BZX85-C15 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range

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- - - - - - - 1W 2Pins 200°C BZX85 Series -
IRFP240PBF
IRFP240PBF - Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

SC10643

Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

VISHAY

The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 200V 20A 0.18ohm Through Hole 10V 4V 150W 3Pins 150°C - -
STW10NK80Z.
STW10NK80Z. - Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

SC06405

Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 160W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 800V 9A 0.78ohm Through Hole 10V 3.75V 160W 3Pins 150°C - -
DB3
DB3 - DIAC / SIDAC, 28 V, 36 V, 50 µA, DO-35, 2 Pins, DIAC

SC07604

DIAC / SIDAC, 28 V, 36 V, 50 µA, DO-35, 2 Pins, DIAC

STMICROELECTRONICS

The DB3 from STMicroelectronics is a axial leaded DIAC in DO-35 package. This device functions as a trigger diode with a fixed voltage reference and can be used in conjunction with triacs for simplified gate control circuits and as a starting element in fl...

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- - - - - - - - 2Pins 125°C - -