Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Repetitive Peak Reverse Voltage Average Forward Current Diode Configuration Diode Case Style No. of Pins Forward Voltage Max Forward Surge Current Operating Temperature Max Diode Mounting Product Range Qualification
 
 
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1N5822RLG
1N5822RLG - Schottky Rectifier, 40 V, 3 A, Single, DO-201AD, 2 Pins, 525 mV

SC07388

Schottky Rectifier, 40 V, 3 A, Single, DO-201AD, 2 Pins, 525 mV

ONSEMI

The 1N5822RLG is an axial-lead Schottky Barrier Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial const...

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40V 3A Single DO-201AD 2Pins 525mV 80A 125°C Through Hole - -
1N5822
1N5822 - Schottky Rectifier, 40 V, 3 A, Single, DO-201AD, 2 Pins, 525 mV

SC07412

Schottky Rectifier, 40 V, 3 A, Single, DO-201AD, 2 Pins, 525 mV

STMICROELECTRONICS

The 1N582X series from STMicroelectronics is axial leaded, single low drop power schottky rectifier in DO-201AD package. These diode features very small conduction losses, negligible switching losses and extremely fast switching. Typically suited for switc...

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40V 3A Single DO-201AD 2Pins 525mV 80A 150°C Through Hole - -
BUX80
BUX80 - Transistor, NPN, TO3

SC06803

Transistor, NPN, TO3

MULTICOMP PRO

The BUX80 is a 400V NPN High Voltage Power Transistor designed for use in high voltage and high speed power switching in inductive circuit, motor control, solenoid and relay drivers. • Collector-emitter sustaining voltage (Vceo (sus) = 4000V minimum) • Low...

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- - - - 2Pins - - 200°C - - -
MJL21194G
MJL21194G - Transistor, NPN, TO264

SC06819

Transistor, NPN, TO264

ONSEMI

The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...

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- - - - 3Pins - - 150°C - - -
FQP27P06
FQP27P06 - Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole

SC08209

Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole

ONSEMI

The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...

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- - - - 3Pins - - 175°C - - -
ZVN3310A
ZVN3310A - Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole

SC06965

Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.

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- - - - 3Pins - - 150°C - - -
STPS1L30A
STPS1L30A - Small Signal Schottky Diode, Single, 30 V, 1 A, 395 mV, 75 A, 150 °C

SC11440

Small Signal Schottky Diode, Single, 30 V, 1 A, 395 mV, 75 A, 150 °C

STMICROELECTRONICS

STPS1L30A is a 30V, 1V low drop power schottky rectifier in a 2 pin SMA package. It is designed for high frequency miniature switched mode power supplies such as adaptors and on-board DC/DC converters. Typical applications include cordless appliance, SSD, ...

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30V 1A Single DO-214AC (SMA) 2Pins 395mV 75A 150°C Surface Mount - -
IRF9620
IRF9620 - Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole

SCIRF9620

Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - 3Pins - - 150°C - - -
STP36NF06L
STP36NF06L - Power MOSFET, N Channel, 60 V, 30 A, 0.04 ohm, TO-220, Through Hole

SC11127

Power MOSFET, N Channel, 60 V, 30 A, 0.04 ohm, TO-220, Through Hole

STMICROELECTRONICS

• N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application

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- - - - 3Pins - - 175°C - - AEC-Q101
BC109C
BC109C - Transistor, NPN, TO18

SC06719

Transistor, NPN, TO18

MULTICOMP PRO

The BC109C from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic...

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- - - - 3Pins - - 200°C - Multicomp Pro Bipolar Single Transistors NPN -
IRFZ44NPBF
IRFZ44NPBF - Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

SC08251

Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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- - - - 3Pins - - 175°C - HEXFET Series -
SPD04N80C3
SPD04N80C3 - Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount

SC11153

Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount

INFINEON

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - 3Pins - - 150°C - - -
SB140-E3/54
SB140-E3/54 - Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 480 mV

SC11447

Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 480 mV

VISHAY

The SB140-E3/54 is a Schottky Barrier Plastic Rectifier with solderable matte tin-plated terminals. It is suitable for use in low voltage high frequency inverters, free-wheeling, DC/DC converters and polarity protection applications. • Colour band denotes ...

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40V 1A Single DO-41 (DO-204AL) 2Pins 480mV 25A 125°C Through Hole - -
BD677
BD677 - Darlington Transistor, TO126

SC09211

Darlington Transistor, TO126

MULTICOMP PRO

The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...

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- - - - 3Pins - - 150°C - - -
ZTX451
ZTX451 - Transistor, NPN, E-Line

SC10972

Transistor, NPN, E-Line

DIODES INC.

The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range

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- - - - 3Pins - - 200°C - - -
NDS7002A
NDS7002A - Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

SC06992

Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

ONSEMI

The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...

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- - - - 3Pins - - 150°C - - -
UF5407.
UF5407. - Fast / Ultrafast Diode, 800 V, 3 A, Single, 1.7 V, 75 ns, 150 A

SCUF5407

Fast / Ultrafast Diode, 800 V, 3 A, Single, 1.7 V, 75 ns, 150 A

VISHAY

• Repetitive Peak Reverse Voltage : 800V • Average Forward Current : 3A • Diode Configuration : Single • Diode Case Style : DO-201AD • Forward Voltage Max : 1.7V • Forward Surge Current : 150A • Operating Temperature Max : 150°C • Product Range : UF540

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800V 3A Single DO-201AD - 1.7V 150A 150°C - UF540 -
GBU605
GBU605 - Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 6 A, SIP, 4 Pins, 1 V

SC09286

Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 6 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU605 is a single-phase glass passivated Bridge Rectifier with matte tin-plated lead terminals and UL94V-0 GBU case. The bridge rectifier features high case dielectric strength of 1500V, high surge current capability and polarity as marked on the body...

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600V 6A - - 4Pins 1V 175A 150°C - GBU60x Series -
PMBT4403
PMBT4403 - Transistor, PNP SOT23

SC06611

Transistor, PNP SOT23

NXP

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - 3Pins - - 150°C - - -
GSIB2560-E3/45
GSIB2560-E3/45 - Bridge Rectifier, Single Phase, 600 V, 25 A, SIP, 4 Pins, 1 V

SC11486

Bridge Rectifier, Single Phase, 600 V, 25 A, SIP, 4 Pins, 1 V

VISHAY

The GSIB2560-E3/45 is a single phase single in-line Bridge Rectifier with matte tin-plated leads terminals and UL94V-0 flammability-rated case. Polarity as marked on the body. High surge current capability and high case dielectric strength of 2500VRMS. • G...

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600V 25A - - 4Pins 1V 350A 150°C - - -
BZV85-C36.
BZV85-C36. - Zener Single Diode, 36 V, 1.3 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC05782

Zener Single Diode, 36 V, 1.3 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

• Diode Case Style : DO-41 (DO-204AL) • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZV85

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- - - DO-41 (DO-204AL) 2Pins - - 200°C - BZV85 -
1N5340BG
1N5340BG - Zener Single Diode, 6 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07168

Zener Single Diode, 6 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N53 series from On Semiconductor are axial leaded zener voltage regulators in 017AA package. • Zener voltage Vz range from 3.3V to 200V • Maximum power dissipation of 5W • Operating temperature range -65°C to 200°C • Maximum surge current IFSM range f...

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- - - 017AA 2Pins - - 200°C Through Hole 1N53 Series -
BAT754C,215
BAT754C,215 - Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 600 mV, 600 mA, 125 °C

SC11304

Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 600 mV, 600 mA, 125 °C

NXP

The BAT754C is a planar Schottky Barrier Diode with an integrated guard ring for stress protection, low forward voltage and low capacitance. • 10pF Capacitance

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30V 200mA Dual Common Cathode SOT-23 3Pins 600mV 600mA 125°C Surface Mount BAT754 -
BYV26C-TAP
BYV26C-TAP - Fast / Ultrafast Diode, 600 V, 1 A, Single, 2.5 V, 30 ns, 30 A

SC11385

Fast / Ultrafast Diode, 600 V, 1 A, Single, 2.5 V, 30 ns, 30 A

VISHAY

The BYV26C-TAP is an ultra-fast Avalanche Sinterglass Diode with solderable plated axial-leads as per MIL-STD-750 standard. It can be mountable to any position. It is suitable for use in switched mode power supplies and high-frequency inverter circuits. • ...

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600V 1A Single SOD-57 - 2.5V 30A 175°C - BYV26 AEC-Q101
S1M
S1M - Standard Recovery Diode, 1 kV, 1 A, Single, 1.1 V, 1.8 µs, 30 A

SC11334

Standard Recovery Diode, 1 kV, 1 A, Single, 1.1 V, 1.8 µs, 30 A

ONSEMI

S1M is a general-purpose rectifier. This SMA rectifier stands out for its optimized low leakage, low capacitance, and fast response time. This was achieved while maintaining the industry standard VF max of 1.1V at 1A and a 30A surge rating. In today’s worl...

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1kV 1A Single DO-214AC (SMA) 2Pins 1.1V 30A 150°C - S1 Series -