Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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BC461
BC461 - Transistor, BC461, PNP, TO39

SC13213

Transistor, BC461, PNP, TO39

MULTICOMP PRO

The BC461 is a -60V Silicon PNP Planar Epitaxial Medium Power Transistor ideal for low frequency devices typically with current ratings 2A. • High performance • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products ...

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PNP 60V 600mA 1W TO-39 Through Hole 3Pins 50MHz 40hFE 200°C - -
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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- - - 140W - Through Hole 3Pins - - - - -
2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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- - - 400mW TO-92 Through Hole 3Pins - - 150°C - -
TIP141
TIP141 - Darlington Transistor, TO247

SC06870

Darlington Transistor, TO247

MULTICOMP PRO

The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...

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NPN - - - - Through Hole 3Pins - - 150°C - -
ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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NPN - - - - Through Hole 18Pins - - 85°C Darlington Array -
BC182L
BC182L - Transistor, NPN, TO92

SC12579

Transistor, NPN, TO92

MULTICOMP PRO

The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...

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NPN 50V 100mA 350mW - Through Hole 3Pins 150MHz 125hFE 150°C Multicomp Pro Bipolar Transistors -
ZVP2110A
ZVP2110A - Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

SC06974

Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.

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- - - 700mW TO-226AA Through Hole 3Pins - - 150°C - -
BAT754A
BAT754A - Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

SC11306

Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

NXP

The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...

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- - - - - - 3Pins - - 125°C BAT754 -
1N5819
1N5819 - Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

SC07409

Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

STMICROELECTRONICS

The 1N5819 from STMicroelectronics is an axial leaded low drop power schottky rectifier in DO-41 package. These diodes are featured with very small conduction losses, negligible switching losses, extremely fast switching and low forward voltage drop. Typic...

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- - - - - - 2Pins - - 150°C - -
BZV85-C10
BZV85-C10 - Zener Single Diode, 10 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07096

Zener Single Diode, 10 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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- - - 1W - - 2Pins - - 200°C BZV85 -
GI752-E3/54
GI752-E3/54 - Standard Recovery Diode, 200 V, 6 A, Single, 900 mV, 2.5 µs, 400 A

SC07355

Standard Recovery Diode, 200 V, 6 A, Single, 900 mV, 2.5 µs, 400 A

VISHAY

The GI752-E3/54 is a high current Axial Plastic Rectifier with void-free moulded epoxy body case and matte tin plated solderable leads. The cathode is denoted by the polarity band. It is suitable for use in general-purpose rectification of power supplies, ...

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- - - - - - 2Pins - - 150°C - -
DB4
DB4 - DIAC / SIDAC, 35 V, 45 V, 100 µA, DO-35, 2 Pins, DIAC

SC07605

DIAC / SIDAC, 35 V, 45 V, 100 µA, DO-35, 2 Pins, DIAC

STMICROELECTRONICS

The DB4 is a 2-pin DIAC for used in conjunction with TRIACs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. The DB4 series DIAC functioning as a trigger diode with a fixed voltage reference. • Low break-over-curr...

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- - - - - - 2Pins - - 125°C - -
BZX79-C22.
BZX79-C22. - Zener Single Diode, 22 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05710

Zener Single Diode, 22 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
GBU406
GBU406 - Bridge Rectifier, Glass Passivated, Single Phase, 800 V, 4 A, SIP, 4 Pins, 1 V

SC09279

Bridge Rectifier, Glass Passivated, Single Phase, 800 V, 4 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU406 from Taiwan Semiconductor is single phase, through hole glass passivated bridge rectifier in GBU package. It has high case dielectric strength of 1500VRMS. • IEC 61249-2-21, UL recognized file E326243 • Ideal for printed circuit board • High sur...

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- - - - - - 4Pins - - 150°C GBU40x Series -
STP9NK50ZFP
STP9NK50ZFP - Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220FP, Through Hole

SC13028

Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP9NK50ZFP is a 500V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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- - - 30W TO-220FP Through Hole 3Pins - - 150°C - -
BC849C
BC849C - Transistor, NPN SOT23

SC06588

Transistor, NPN SOT23

NXP

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 520hFE • Operating Temperature Max : 150°C

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NPN 30V 100mA 250mW SOT-23 Surface Mount 3Pins - 520hFE 150°C - -
BC640
BC640 - Transistor, PNP, TO92

SC09157

Transistor, PNP, TO92

MULTICOMP PRO

The BC640 is a PNP silicon planar epitaxial low power Bipolar Transistor for driver stages and audio amplifier applications. • 45°C/W Junction-to-case thermal resistance • 156°C/W Junction-to-ambient in free air thermal resistance • Multicomp Pro products ...

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PNP 80V 1A 800mW TO-92 Through Hole 3Pins 150MHz 100hFE 150°C Multicomp Pro Bipolar Transistors PNP -
IRFP450APBF
IRFP450APBF - Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

SC10645

Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

VISHAY

The IRFP450APBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dy...

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- - - 190W TO-247AC Through Hole 3Pins - - 150°C - -
IRF3710PBF
IRF3710PBF - Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

SC11104

Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

INFINEON

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...

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- - - 150W TO-220AB Through Hole 3Pins - - - - -
MUR1100ERLG
MUR1100ERLG - Standard Recovery Diode, 1 kV, 1 A, Single, 1.75 V, 100 ns, 35 A

SC11386

Standard Recovery Diode, 1 kV, 1 A, Single, 1.75 V, 100 ns, 35 A

ONSEMI

The MUR1100ERLG is a Switch Mode plastic Power Rectifier with moulded epoxy case. It has solderable axial leads. It is designed for use in switching power supplies, inverters and as freewheeling diodes. This Ultrafast E series rectifier comes with high rev...

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- - - - - - 2Pins - - 175°C - -
BC847B
BC847B - Transistor, NPN, SOT23

SC06614

Transistor, NPN, SOT23

NXP

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 290hFE • Operating Temperature Max : 150°C

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NPN 45V 100mA 250mW SOT-23 Surface Mount 3Pins - 290hFE 150°C - -
BZX79-C4V3.
BZX79-C4V3. - Zener Single Diode, 4.3 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05694

Zener Single Diode, 4.3 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
1N5357BG
1N5357BG - Zener Single Diode, 20 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07184

Zener Single Diode, 20 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - 5W - - 2Pins - - 200°C 1N53 Series -
1N5819RLG
1N5819RLG - Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 600 mV

SC07387

Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 600 mV

ONSEMI

The 1N5819RLG is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction ...

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- - - - - - 2Pins - - 125°C - -
FMMT619
FMMT619 - Transistor, NPN, SOT23

SC06630

Transistor, NPN, SOT23

DIODES INC.

The FMMT619 from Diode Inc is a surface mount, 50V NPN silicon low saturation transistor in SOT-23 package. This transistor is moulded in plastic and "Green" moulding compound, terminal is matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogn...

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NPN 50V 2A 625mW SOT-23 Surface Mount 3Pins 140MHz 450hFE 150°C - -