Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BAT54A
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SC21375 |
Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 500 mV, 600 mA, 150 °C MULTICOMP PRO BAT54A is a high-performance dual common anode Schottky diode designed for small signal applications. With a reverse voltage rating of 30V and a maximum current of 200mA, it is ideal for use in circuits requiring low forward voltage drop and fast switching...
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BAT54S+
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SC17654 |
Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 400 mV, 600 mA, 125 °C MULTICOMP PRO The BAT54S is a small signal Schottky Barrier Diode with small outline plastic package case and matte tin (Sn) lead finish with nickel (Ni) under plate. It features fast switching speed. • Moisture sensitivity level 1 • Surface device type mounting • -55 t...
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FDS4435BZ
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SC16772 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount ONSEMI The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...
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PDS760-13
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SC17546 |
Schottky Rectifier, POWERDI®, 60 V, 7 A, Single, PowerDI 5, 2 Pins, 620 mV DIODES INC. The PDS760-13 is a POWERDI® Schottky Barrier Rectifier with matte tin annealed over copper lead frame terminals and UL94V-0 flammability-rated moulded plastic case. The barrier rectifier features guard ring die construction for transient protection, low re...
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BZT03C120-TR
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SC07153 |
Zener Single Diode, 120 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...
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BC856B,215
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SC16009 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23 NEXPERIA The BC856B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847
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1N5378BG
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SC07203 |
Zener Single Diode, 100 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5378BG is a Surmetic™ 40 Zener Voltage Regulator Diode with void-free transfer-moulded thermosetting plastic case, all external surfaces are corrosion-resistant and leads are readily solderable finish, cathode indicated by polarity band, tight limits...
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BC847,215
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SC16017 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC847,215 is a NPN general purpose Transistor in SMD plastic package. • Three Different Gain Selections
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IXFN200N10P
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SC17024 |
MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V IXYS SEMICONDUCTOR The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier ...
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NX2301P,215
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SC16710 |
Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, SOT-23, Surface Mount NEXPERIA The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • 1.8V RDSon rated for Low Voltage Gate Drive • Very Fast Switching • AEC-Q101 Qualified
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1N5400G
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SC21465 |
Standard Recovery Diode, 50 V, 3 A, Single, 1 V, 200 A ONSEMI The 1N5400G is an axial-leaded standard Recovery Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. The lead mounted standard recovery rectifier is designed for use in power suppli...
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W06G-E4/51
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SC08152 |
Bridge Rectifier, Single Phase, 600 V, 1.5 A, Through Hole, 4 Pins, 1 V VISHAY The W06G-E4/51 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for adapter, charger and home appliances applications. • UL94V-0 Flammabil...
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BD241C
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SC06745 |
Transistor, NPN, TO220 STMICROELECTRONICS The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...
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B360A-13-F
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SC17581 |
Schottky Rectifier, 60 V, 3 A, Single, DO-214AC (SMA), 2 Pins, 700 mV DIODES INC. The B360A-13-F is a surface mount Schottky Barrier Rectifier Diode with moulded plastic case. Suitable for used in low voltage, high frequency inverters, freewheeling, DC-DC converters and polarity protection applications. • Guard Ring Die Construction for...
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MBR1100RLG
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SC07392 |
Schottky Rectifier, 100 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 790 mV ONSEMI The MBR1100RLG is an axial-lead Schottky Rectifier with epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and met...
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BC846
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SC06582 |
Transistor, NPN SOT23 NXP
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B0540W-7-F
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SC17553 |
Schottky Rectifier, 40 V, 500 mA, Single, SOD-123, 2 Pins, 620 mV DIODES INC. The B0540W-7-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solderable matte tin-finish annealed over alloy 42 lead frame terminals as per MIL-STD-202 standard. • Polarity is indicated by cathode band • Low forward voltage dr...
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B220A-13-F
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SC17583 |
Schottky Rectifier, 20 V, 2 A, Single, DO-214AC (SMA), 2 Pins, 500 mV DIODES INC. The B220A-13-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and lead-free solderable matte tin-finish terminals as per MIL-STD-202. It is suitable for use in low-voltage, high-frequency inverters, free-wheeling and polarity prote...
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ZTX603
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SC10995 |
Darlington Transistor, E-Line DIODES INC. ZTX603 is a NPN silicon planar medium power Darlington transistor. • Collector-base voltage is 100V • Collector-emitter voltage is 80V • Emitter-base voltage is 10V • Peak pulse current is 4A • Continuous collector current is 1A • Power dissipation at Tamb...
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NTR2101PT1G
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SC16911 |
Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount ONSEMI The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. • Leading Trench technology for low RDS (O...
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BZX79-C16.
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SC05708 |
Zener Single Diode, 16 V, 500 mW, DO-35, 2 Pins, 200 °C NXP
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ZTX614
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SC06839 |
Darlington Transistor, E-Line DIODES INC. The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range
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MMUN2215LT1G
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SC19268 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10Kohm ONSEMI • Simplifies circuit design • Reduces board space • Reduces component count • 50V Collector-base voltage • 50V Collector-emitter voltage • 100mA Continuous collector current
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2N5195G
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SC06743 |
Transistor, PNP, TO126 ONSEMI The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192
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SR504
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SC07449 |
Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV TAIWAN SEMICONDUCTOR The SR504 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...
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