Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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2N7002H6327XTSA2
2N7002H6327XTSA2 - Power MOSFET, N Channel, 60 V, 300 mA, 3 ohm, SOT-23, Surface Mount

SC21335

Power MOSFET, N Channel, 60 V, 300 mA, 3 ohm, SOT-23, Surface Mount

INFINEON

The 2N7002 H6327 is a N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications. • Enhancement-mode • Logic level • Avalanche rated • Fast switching • Halogen-free

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N Channel 60V 300mA 3ohm SOT-23 Surface Mount 10V 2.1V 500mW 3Pins 150°C - -
S1BL
S1BL - Standard Recovery Diode, Glass Passivated, 100 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A

SC21542

Standard Recovery Diode, Glass Passivated, 100 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A

TAIWAN SEMICONDUCTOR

• No. of Pins : 2Pins • Operating Temperature Max : 150°C • Product Range : S1xL Series

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ZLLS500
ZLLS500 - Small Signal Schottky Diode, Single, 40 V, 700 mA, 1 V, 13 A, 150 °C

SC11291

Small Signal Schottky Diode, Single, 40 V, 700 mA, 1 V, 13 A, 150 °C

DIODES INC.

The ZLLS500 is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It offers users an excellent performance combination comprising high current ope...

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- - - - - - - - - 3Pins 150°C - -
GBU604
GBU604 - Bridge Rectifier, Glass Passivated, Single Phase, 400 V, 6 A, SIP, 4 Pins, 1 V

SC09285

Bridge Rectifier, Glass Passivated, Single Phase, 400 V, 6 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU604 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with high surge current capability. It has matte tin-plated leads, solderable per JESD22-B102 terminals. • UL94V-0 Flammability rating • Ideal for printed circuit board • <...

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- - - - - - - - - 4Pins 150°C GBU60x Series -
BAR43FILM
BAR43FILM - Schottky Rectifier, 30 V, 100 mA, Single, SOT-23, 3 Pins, 330 mV

SC11328

Schottky Rectifier, 30 V, 100 mA, Single, SOT-23, 3 Pins, 330 mV

STMICROELECTRONICS

The BAR43FILM is a surface-mount small signal general-purpose metal to silicon Schottky Diode features very low turn-ON voltage and fast switching. • Very small conduction losses • Negligible switching losses • Low forward voltage drop

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- - - - - - - - - 3Pins 150°C BAR43 Series -
BZV55-C24
BZV55-C24 - Zener Single Diode, 24 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11227

Zener Single Diode, 24 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...

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- - - - - - - - 500mW 2Pins 200°C BZV55 -
BAS21E6327HTSA1
BAS21E6327HTSA1 - Small Signal Diode, High Voltage, Single, 200 V, 250 mA, 1 V, 50 ns, 1 A

SC11243

Small Signal Diode, High Voltage, Single, 200 V, 250 mA, 1 V, 50 ns, 1 A

INFINEON

The BAS 21 E6327 is a silicon Switching Diode features high breakdown voltage. Suitable for high-speed switching applications. • 350mW Total power dissipation • 250V Breakdown voltage • 5pF Capacitance

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- - - - - - - - - 3Pins 150°C BAS21 AEC-Q101
BAT54CFILM
BAT54CFILM - Small Signal Schottky Diode, Dual Common Cathode, 30 V, 300 mA, 900 mV, 1 A, 150 °C

SC11318

Small Signal Schottky Diode, Dual Common Cathode, 30 V, 300 mA, 900 mV, 1 A, 150 °C

STMICROELECTRONICS

The BAT54CFILM is a 3-pin 40V surface-mount small signal Schottky Diode with dual common cathode configuration. It accepts low forward and reverse recovery times, low conduction and reverse losses and negligible switching losses. • Extremely fast switching...

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- - - - - - - - - 3Pins 150°C BAT54 Series -
ZHCS500
ZHCS500 - Small Signal Schottky Diode, Single, 40 V, 500 mA, 550 mV, 6.75 A, 125 °C

SC11288

Small Signal Schottky Diode, Single, 40 V, 500 mA, 550 mV, 6.75 A, 125 °C

DIODES INC.

The ZHCS500 is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is used in DC-DC converter, PCMCIA and mobile telecommunication applications....

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- - - - - - - - - 3Pins 125°C - -
BAV199E6327HTSA1
BAV199E6327HTSA1 - Small Signal Diode, Dual Series, 85 V, 200 mA, 1.25 V, 1.5 µs, 4.5 A

SC11237

Small Signal Diode, Dual Series, 85 V, 200 mA, 1.25 V, 1.5 µs, 4.5 A

INFINEON

The BAV199 from Infineon is surface mount, dual Isolated, silicon low leakage diode in SOT-23 package. These diodes are featured with medium speed switching, applicable at low leakage and switching applications. • Automotive grade AEC-Q101 qualified • Maxi...

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- - - - - - - - - 3Pins 150°C BAV199 Series AEC-Q101
VS-25RIA80
VS-25RIA80 - Thyristor, 25A, 800V, TO48

SC11504

Thyristor, 25A, 800V, TO48

VISHAY

The VS-25RIA80 is a 25A stud version medium power Phase Control Thyristor designed and qualified for industrial and consumer level. • Improved glass passivation for high reliability and exceptional stability at high temperature • High di/dt and dV/dt capab...

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- - - - - - - - - - 125°C - -
BFS17PE6327HTSA1
BFS17PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

SC11003

Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

INFINEON

The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.

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- - - - SOT-23 Surface Mount - - 280mW 3Pins 150°C - AEC-Q101
MMUN2216LT1G
MMUN2216LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

SC10967

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

ONSEMI

The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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- - - - SOT-23 Surface Mount - - 400mW - 150°C - -
BC846
BC846 - Transistor, NPN SOT23

SC06582

Transistor, NPN SOT23

NXP

• Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - SOT-23 Surface Mount - - 250mW 3Pins 150°C - -
BYW56-TAP
BYW56-TAP - Standard Recovery Diode, 1 kV, 2 A, Single, 1 V, 4 µs, 50 A

SC11348

Standard Recovery Diode, 1 kV, 2 A, Single, 1 V, 4 µs, 50 A

VISHAY

The BYW56-TAP is a standard Avalanche Sinterglass Diode with plated axial leads terminals and colour band denotes cathode end polarity. Solderable terminals as per MIL-STD-750, method 2026 standard. Controlled avalanche characteristics and glass passivated...

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- - - - - - - - - 2Pins 175°C BYW56 AEC-Q101
FQP12N60C
FQP12N60C - Power MOSFET, N Channel, 600 V, 12 A, 0.65 ohm, TO-220, Through Hole

SC11098

Power MOSFET, N Channel, 600 V, 12 A, 0.65 ohm, TO-220, Through Hole

ONSEMI

The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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N Channel 600V 12A 0.65ohm TO-220 Through Hole 10V 4V 225W 3Pins 150°C - -
Z0103MA 5AL2
Z0103MA 5AL2 - Triac, 600V, 1A, TO-92, 3mA, 1.3V

SC17096

Triac, 600V, 1A, TO-92, 3mA, 1.3V

STMICROELECTRONICS

Z01 series standard 1A triac suitable for general purpose AC switching applications. Typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers. • 3mA gate current sensitivity

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RS1M+
RS1M+ - Standard Recovery Diode, 1 kV, 1 A, Single, 1.3 V, 500 ns, 30 A

SC15535

Standard Recovery Diode, 1 kV, 1 A, Single, 1.3 V, 500 ns, 30 A

MULTICOMP PRO

The RS1M is a Surface-mount Diode with moulded plastic case and pure tin-plated lead-free terminals. • Polarity is indicated by cathode band • Glass-passivated junction chip • Built-in strain-relief, ideal for automated placement • Fast switching for high ...

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BC848ALT1G
BC848ALT1G - Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD

SC16058

Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD

ONSEMI

• Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 300mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Product Range : BCxxx • Qualification : AEC-Q101

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- - - - SOT-23 Surface Mount - - 300mW 3Pins 150°C BCxxx AEC-Q101
SR160
SR160 - Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV

SC15280

Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV

MULTICOMP PRO

SR160 is a Schottky rectifier designed for efficient power conversion. It features a 60V reverse voltage rating and a 1A forward current capacity, with a low forward voltage drop of 700mV. The rectifier comes in a DO-41 (DO-204AL) package with 2 pins, maki...

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BC817K-40VL
BC817K-40VL - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

SC15928

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

NEXPERIA

• Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Power Dissipation : 350mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Product Range : BC817K • Qualification : AEC-Q101

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- - - - TO-236AB Surface Mount - - 350mW 3Pins 150°C BC817K AEC-Q101
BC807-25LVL
BC807-25LVL - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

SC15933

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

NEXPERIA

• Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Product Range : BC807L • Qualification : AEC-Q101

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- - - - TO-236AB Surface Mount - - 250mW 3Pins 150°C BC807L AEC-Q101
IXFN80N50
IXFN80N50 - MOSFET Transistor, N Channel, 80A, 10V,

SC17017

MOSFET Transistor, N Channel, 80A, 10V,

IXYS SEMICONDUCTOR

The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...

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N Channel 500V 80A 0.055ohm ISOTOP Module 10V 4.5V 780W 4Pins 150°C HiPerFET Series -
1N4004-TP
1N4004-TP - Standard Recovery Diode, 400V, 1A, Single, 1.1V, 2µs, 30A

SC21726

Standard Recovery Diode, 400V, 1A, Single, 1.1V, 2µs, 30A

MICRO COMMERCIAL COMPONENTS

• No. of Pins : 2Pins • Operating Temperature Max : 150°C

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1N4004
1N4004 - Standard Recovery Diode, 400V, 1A, Single, 1.1V, 1500ns, 30A

SC21725

Standard Recovery Diode, 400V, 1A, Single, 1.1V, 1500ns, 30A

DIOTEC SEMICONDUCTOR

• No. of Pins : 2Pins • Operating Temperature Max : 175°C

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