Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | Operating Temperature Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846
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SC06582 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 110hFE • Operating Temperature Max : 150°C
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NPN | 65V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 110hFE | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMUN2216LT1G
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SC10967 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm ONSEMI The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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Single NPN | - | 100mA | 400mW | SOT-23 | Surface Mount | - | - | 160hFE | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RS1M+
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SC15535 |
Standard Recovery Diode, 1 kV, 1 A, Single, 1.3 V, 500 ns, 30 A MULTICOMP PRO The RS1M is a Surface-mount Diode with moulded plastic case and pure tin-plated lead-free terminals. • Polarity is indicated by cathode band • Glass-passivated junction chip • Built-in strain-relief, ideal for automated placement • Fast switching for high ...
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- | - | - | - | - | - | 2Pins | - | - | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817K-40VL
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SC15928 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 350mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 250hFE • Operating Temperature Max : 150°C
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NPN | 45V | 500mA | 350mW | TO-236AB | Surface Mount | 3Pins | 100MHz | 250hFE | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SR160
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SC15280 |
Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV MULTICOMP PRO SR160 is a Schottky rectifier designed for efficient power conversion. It features a 60V reverse voltage rating and a 1A forward current capacity, with a low forward voltage drop of 700mV. The rectifier comes in a DO-41 (DO-204AL) package with 2 pins, maki...
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- | - | - | - | - | - | 2Pins | - | - | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Z0103MA 5AL2
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SC17096 |
Triac, 600V, 1A, TO-92, 3mA, 1.3V STMICROELECTRONICS Z01 series standard 1A triac suitable for general purpose AC switching applications. Typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers. • 3mA gate current sensitivity
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- | - | - | - | - | - | 3Pins | - | - | 125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN80N50
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SC17017 |
MOSFET Transistor, N Channel, 80A, 10V, IXYS SEMICONDUCTOR The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...
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N Channel | - | - | 780W | ISOTOP | Module | 4Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848ALT1G
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SC16058 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 100mA • Power Dissipation : 300mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 110hFE • Operating Temperature Max : 150°C
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NPN | 30V | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 110hFE | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25LVL
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SC15933 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : PNP • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 80MHz • DC Current Gain hFE Min : 160hFE • Operating Temperature Max : 150°C
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PNP | 45V | 500mA | 250mW | TO-236AB | Surface Mount | 3Pins | 80MHz | 160hFE | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4004
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SC21725 |
Standard Recovery Diode, 400V, 1A, Single, 1.1V, 1500ns, 30A DIOTEC SEMICONDUCTOR • No. of Pins : 2Pins • Operating Temperature Max : 175°C
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- | - | - | - | - | - | 2Pins | - | - | 175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4004-TP
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SC21726 |
Standard Recovery Diode, 400V, 1A, Single, 1.1V, 2µs, 30A MICRO COMMERCIAL COMPONENTS • No. of Pins : 2Pins • Operating Temperature Max : 150°C
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- | - | - | - | - | - | 2Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV65BG
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SC06873 |
Darlington Transistor, SOT93 ONSEMI The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. ...
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NPN | - | - | - | - | Through Hole | 3Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SR503
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SC07448 |
Schottky Rectifier, 30 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV TAIWAN SEMICONDUCTOR The SR503 is a Schottky Barrier Rectifier with matte tin-plated leads terminals and UL94V-0-flame rated moulding compound case. Guarding for overvoltage protection. Low power loss, low forward voltage drop and high efficiency. • High surge current capabili...
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- | - | - | - | - | - | 2Pins | - | - | 125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP3N80C
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SC11099 |
Power MOSFET, N Channel, 800 V, 3 A, 4.8 ohm, TO-220, Through Hole ONSEMI The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and with...
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- | - | - | 107W | TO-220 | Through Hole | 3Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC860C
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SC06603 |
Transistor, PNP SOT23 NXP The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850
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PNP | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 420hFE | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF7N65C
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SC16961 |
Power MOSFET, N Channel, 650 V, 7 A, 1.4 ohm, TO-220F, Through Hole ONSEMI The FQPF7N65C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and ...
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- | - | - | 52W | TO-220F | Through Hole | 3Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUV48A
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SC06801 |
Transistor, NPN, TO247 MOSPEC • Transistor Polarity : NPN • Collector Emitter Voltage Max : 450V • Power Dissipation : 150W • Transistor Mounting : Through Hole • No. of Pins : 3Pins
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NPN | 450V | - | 150W | - | Through Hole | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX84C4V7
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SC21385 |
Zener Single Diode, 4.7 V, 300 mW, SOT-23, 3 Pins, 150 °C, Surface Mount MULTICOMP PRO BZX84C4V7 is a 4.7V Zener single diode designed for voltage regulation and protection in electronic circuits. It has a power dissipation of 300mW and comes in a compact SOT-23 surface-mount package with 3 pins. With an operating temperature of up to 150°C,...
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- | - | - | 300mW | - | - | 3Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT41
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SC07323 |
Small Signal Schottky Diode, Single, 100 V, 100 mA, 450 mV, 750 mA, 125 °C STMICROELECTRONICS The BAT41 is a general purpose metal to silicon Small Signal Schottky Diode featuring extremely fast switching, low forward and reverse recovery times. This diode is specially suited for switching mode with low IR losses. This device has integrated protect...
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- | - | - | - | - | - | 2Pins | - | - | 125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU508AW
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SC15766 |
Bipolar (BJT) Single Transistor, NPN, 700V, 8A, 125W, TO-247 STMICROELECTRONICS The BU508AW is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflect...
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NPN | 700V | 8A | 125W | TO-247 | Through Hole | 3Pins | - | 5hFE | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDPF18N50
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SC16953 |
Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220F, Through Hole ONSEMI The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...
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- | - | - | 38.5W | TO-220F | Through Hole | 3Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC32725TA
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SC15770 |
Bipolar (BJT) Single Transistor, Small Signal, PNP, -45V, -800mA, 625mW, TO-92 ONSEMI The BC32725TA is a -45V PNP Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. It is complement to BC337/BC338 transistors. This product is general usage and suitable for many different applications. • -5V Emitter to base voltag...
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PNP | 45V | 800mA | 625mW | TO-92 | Through Hole | 3Pins | 100MHz | 100hFE | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSR0530HT1G
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SC17637 |
Schottky Rectifier, 30 V, 500 mA, Single, SOD-323, 2 Pins, 620 mV ONSEMI • No. of Pins : 2Pins • Operating Temperature Max : 150°C
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- | - | - | - | - | - | 2Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMEG4010EGWX
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SC17656 |
Schottky Rectifier, 40 V, 1 A, Single, SOD-123, 2 Pins, 640 mV NEXPERIA • No. of Pins : 2Pins • Operating Temperature Max : 150°C
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- | - | - | - | - | - | 2Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAV21WS-7-F
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SC17787 |
Small Signal Diode, Switching, Single, 250 V, 200 mA, 1.25 V, 50 ns, 2.5 A DIODES INC. The BAV21WS-7-F is a surface mount Small Signal Switching Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is ideally suited for automated insertion. It can also be used for ...
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- | - | - | - | - | - | 2Pins | - | - | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























