Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max NPN | Collector Emitter Voltage Max PNP | Continuous Collector Current | Base Input Resistor R1 | Base Emitter Resistor R2 | Transistor Case Style | No. of Pins | Transistor Mounting | Power Dissipation | Operating Temperature Max | DC Current Gain hFE Min | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2211LT1G
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SC19267 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio) ONSEMI The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single trans...
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Single NPN | 50V | - | 100mA | 10kohm | 10kohm | SOT-23 | 3 Pin | Surface Mount | 400mW | 150°C | 35hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR43CFILM
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SC19289 |
Small Signal Schottky Diode, Dual Common Cathode, 30V, 100mA, 330mV, 750mA, 150 Degrees C STMICROELECTRONICS The BAR43CFILM is a general purpose metal to silicon Small Signal Schottky Diode featuring very low turn-on voltage, fast switching, negligible switching losses and very small conduction losses. • Low forward voltage drop • Surface mount device • 150?C Ope...
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- | - | - | - | - | - | - | - | - | - | 150°C | - | BAR43 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS123,215
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SC19225 |
Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD NEXPERIA The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...
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- | - | - | - | - | - | SOT-23 | - | Surface Mount | 250mW | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT760-7
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SC19119 |
Schottky Rectifier, 30 V, 1 A, Single, SOD-323, 2 Pins, 550 mV DIODES INC. The BAT760-7 is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solderable matte tin-finish annealed over alloy 42 lead frame terminals as per MIL-STD-202 standard. • Very low forward-voltage drop • Guard-ring construction for tran...
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- | - | - | - | - | - | - | - | - | - | 125°C | - | BAT760 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138PW,115
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SC16000 |
Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD NEXPERIA The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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- | - | - | - | - | - | SOT-323 | - | Surface Mount | 830mW | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2302CDS-T1-GE3
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SC16836 |
Power MOSFET, N Channel, 20 V, 2.9 A, 0.057 ohm, TO-236, Surface Mount VISHAY The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage
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- | - | - | - | - | - | TO-236 | - | Surface Mount | 710mW | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN338P
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SC11041 |
Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount ONSEMI The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...
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- | - | - | - | - | - | - | - | Surface Mount | 500mW | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32C
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SC06765 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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PNP | - | - | 3A | - | - | TO-220 | - | Through Hole | 40W | 150°C | 10hFE | Multicomp Pro PNP Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W01G-E4/51
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SC08149 |
Bridge Rectifier, Single Phase, 100 V, 1.5 A, Through Hole, 4 Pins, 1 V VISHAY The W01G-E4/51 is a single phase glass passivated Bridge Rectifier with silver-plated leads terminals and UL94V-0 flammability-rated case. Polarity as marked on the body. High case dielectric strength and High surge current capability. Ideal for printed ci...
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- | - | - | - | - | - | - | - | - | - | 150°C | - | W01G | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205ZPBF
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SC11149 |
Power MOSFET, Automotive, N Channel, 55 V, 110 A, 6500 µohm, TO-220AB, Through Hole INFINEON The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...
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- | - | - | - | - | - | - | - | Through Hole | 170W | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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PNP | - | - | 10A | - | - | TO-220 | - | Through Hole | 70W | 150°C | 60hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA40-800B
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SC07594 |
Triac, 40A, 800V, RD-91 STMICROELECTRONICS The BTA40-800B is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal resis...
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- | - | - | - | - | - | - | - | - | - | 125°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTIP41C
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SC06757 |
Transistor, NPN, TO220 MULTICOMP PRO • Transistor Polarity : NPN • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole
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NPN | - | - | - | - | - | TO-220 | - | Through Hole | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT754S
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SC11302 |
Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 260 mV, 600 mA, 125 °C NXP The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...
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- | - | - | - | - | - | - | - | - | - | 125°C | - | BAT754 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STTH6002CW
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SC11399 |
Fast / Ultrafast Diode, 200 V, 30 A, Dual Common Cathode, 1.05 V, 22 ns, 330 A STMICROELECTRONICS The STTH6002CW is a high efficiency Ultrafast Diode features high surge current capability, low forward and reverse recovery times. This dual centre tab rectifier is suitable for high frequency DC to DC converters. This device is intended for use in low vo...
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- | - | - | - | - | - | - | 3 Pin | - | - | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC108
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SC06646 |
Transistor, NPN, TO18 MULTICOMP PRO The BC108 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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NPN | - | - | 200mA | - | - | TO-18 | - | Through Hole | 750mW | 200°C | 110hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C2V4
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SC11212 |
Zener Single Diode, 2.4 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | - | - | - | - | - | - | 500mW | 200°C | - | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STPS200170TV1
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SC11442 |
Diode Module, 170 V, 200 A, 630 mV, Dual Isolated, ISOTOP, 4 Pins STMICROELECTRONICS STPS200170TV1 is a high-voltage power schottky rectifier. This high-voltage Schottky rectifier is suited for high-frequency switch-mode power supplies. It is packaged in ISOTOP. This device is intended for use in the secondary rectification of applications...
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- | - | - | - | - | - | - | - | - | - | 150°C | - | STPS2 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW30
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SC06605 |
Transistor, PNP SOT23 NXP The BCW30 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW31 and BCW32 • C2 Marking code
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PNP | - | - | 100mA | - | - | SOT-23 | - | Surface Mount | 250mW | 150°C | 150hFE | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C6V2
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SC11225 |
Zener Single Diode, 6.2 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | - | - | - | - | - | - | 500mW | 200°C | - | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B5V1
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SC11211 |
Zener Single Diode, 5.1 V, 400 mW, SOD-80 (MiniMELF), 2 Pins, 200 °C NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | - | - | - | - | - | - | 400mW | 200°C | - | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-2KBB40R
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SC07482 |
Bridge Rectifier, Single Phase, 400 V, 1.9 A, Through Hole, 4 Pins, 1.1 V VISHAY The VS-2KBB40R is a 4-pin single-phase Bridge Rectifier Diode assembly consisting of four silicon diodes in a plastic encapsulation, intended for general applications. • Suitable for printed circuit board mounting • Leads on standard 2.54mm grid • Compact ...
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- | - | - | - | - | - | - | - | - | - | 150°C | - | VS-2KBB Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU4K-E3/45
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SC09274 |
Bridge Rectifier, Single Phase, 800 V, 4 A, GBU, 4 Pins, 1 V VISHAY The GBU4K-E3/45 is a single-phase glass passivated Bridge Rectifier with matte tin-plated leads terminals and UL94V-0 flame rated moulding compound case. The bridge rectifier features high surge current capability and high case dielectric strength of 1500V...
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- | - | - | - | - | - | - | - | - | - | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4568PBF
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SC11170 |
Power MOSFET, N Channel, 150 V, 171 A, 5900 µohm, TO-247AC, Through Hole INFINEON The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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- | - | - | - | - | - | TO-247AC | - | Through Hole | 517W | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUR4100ERLG
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SC11389 |
Fast / Ultrafast Diode, 1 kV, 4 A, Single, 1.85 V, 75 ns, 70 A ONSEMI The MUR4100ERLG is a Switch Mode Power Rectifier with moulded epoxy case. It has solderable axial leads. It is designed for use in switching power supplies, inverters and as freewheeling diodes. This Ultrafast E series rectifier comes with high reverse ene...
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- | - | - | - | - | - | - | - | - | - | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























