Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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1SMB5938BT3G
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SC17920 |
Zener Single Diode, General Purpose, 36 V, 3 W, DO-214AA (SMB), 2 Pins, 150 °C, Surface Mount ONSEMI The 1SMB59xxBT3G series surface mount Voltage Regulator Zener Diode with void free transfer-moulded plastic case. All external surfaces are corrosion-resistant and leads are readily solderable. • 3.3 to 200V Zener voltage range • ESD rating of Class 3 (<gt...
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BZX79-C39.
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SC05715 |
Zener Single Diode, 39 V, 500 mW, DO-35, 2 Pins, 200 °C NXP
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BAT54SW,115
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SC17480 |
Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 800 mV, 600 mA, 150 °C NEXPERIA The BAT54SW,115 is a planar Schottky Barrier Diode with an integrated guard ring for stress protection, low forward voltage and low capacitance. • 200mW Total power dissipation • 10pF Capacitance
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BZT03C47-TR
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SC07144 |
Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY • BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...
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SKB 30/16 A1
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SC17437 |
Bridge Rectifier Diode, Single Phase, 1.6kV, 30A, Module, 2.2V, 4 Pins SEMIKRON SKB 30/16 A1 from Semikron is panel mount, single phase power bridge rectifier in G12 package. This module features isolated metal case with screw terminals hence easy to mount. Typical applications include single phase rectifiers for power supplies, input...
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FDN352AP
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SC16755 |
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount ONSEMI The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...
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GBU8K.
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SC05551 |
Bridge Rectifier, Single Phase, 800 V, 8 A, 4 Pins, 1 V ONSEMI
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MBR140SFT1G
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SC17495 |
Schottky Rectifier, 40 V, 1 A, Single, SOD-123FL, 2 Pins, 550 mV ONSEMI The MBR140SFT1G is a surface mount Schottky Power Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. This device uses the Schottky barrier principle with a large area metal-to-si...
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BSS84P
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SC07003 |
Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount INFINEON
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LL4148 L1G
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SC17830 |
Small Signal Diode, Single, 75 V, 150 mA, 1 V, 4 ns, 2 A TAIWAN SEMICONDUCTOR The LL4148 is surface mount, low power signal diode. • Automotive grade AEC-Q101 qualified • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operating junction temperature of -65°C to 175°C • Peak forward surge current is 2A at tp...
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ES3D
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SC17770 |
Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 20 ns, 100 A ONSEMI The ES3D is an ultra fast recovery Rectifier Diode for surface mount applications. • Glass-passivated Junction • Easy to Pick and Place • Built-in Strain Relief • Superfast Recovery Times for High Efficiency
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SK34B
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SC21546 |
Schottky Rectifier, Miniature, 40 V, 3 A, Single, DO-214AA (SMB), 2 Pins, 500 mV TAIWAN SEMICONDUCTOR The SK34B is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solder-plated terminals. • Polarity is indicated by cathode band • Metal to silicon rectifier, majority carrier conduction • Low-forward-voltage drop • Easy pick and plac...
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TP2104N3-G
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SC16920 |
P Channel Power MOSFET, Vertical DMOS FET, 40V, 175mA, 6 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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BAT54
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SC17678 |
Small Signal Schottky Diode, Single, 30 V, 200 mA, 800 mV, 600 mA, 150 °C DIODES INC. • Automotive grade AEC-Q101 qualified • Peak repetitive reverse voltage of 30V • Non repetitive peak forward surge current is 600mA • Power dissipation is 200mW • Operating temperature range -65°C to 150°C • Forward voltage of 800mV at IF 100mA • Reverse ...
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PDZ5.6B,115
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SC17973 |
Zener Single Diode, 5.6 V, 400 mW, SOD-323, 2 Pins, 150 °C, Surface Mount NEXPERIA The PDZ-B series low-power general-purpose Zener Diode designed in a SOD323 (SC-76) small plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±2% Tolerance series (approximately) • 2.4 to 36V (E24 range) Nominal...
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FZT653
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SC10978 |
Transistor, NPN, SOT223 DIODES INC. The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...
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BAT54W
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SC11309 |
Small Signal Schottky Diode, Single, 30 V, 200 mA, 320 mV, 600 mA, 125 °C NXP The BAT54W series planar Schottky Barrier Diode with an integrated guard ring for stress protection, low forward voltage and low capacitance. • 200mW Total power dissipation • 10pF Capacitance
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FMMT718
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SC16023 |
Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD DIODES INC. The FMMT718 is a PNP silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 10A Peak pulse current • Excellent hFE characteristics up to 10A • Exhibits extremely low equivalent on resistance • NPN ...
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BAS70-04-7-F
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SC19121 |
SMD Small Signal Schottky Barrier Diode, 70V, 15mA, 1V, 100mA DIODES INC. The BAS70-04-7-F is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals and PN junction guard ring for transient and ESD protection. • Low turn-on v...
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BSS123-7-F
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SC16705 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. BSS123-7-F is a N-channel enhancement mode field effect transistor. It is produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. This product has been designed to minimize on-state resistance while providing rugged, ...
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Z00607MA
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SC07598 |
Triac, 0.8A, 600V, TO92 STMICROELECTRONICS
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BAV70E6327HTSA1
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SC17712 |
Small Signal Diode, Common Cathode, 80 V, 200 mA, 1.25 V, 4 ns, 4.5 A INFINEON The BAV 70 E6327 is a silicon Switching Diode features common cathode configuration. Suitable for high-speed switching applications. • 250mW Total power dissipation • 85V Breakdown voltage • 1.5pF Capacitance
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NTR4101PT1G
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SC16827 |
Power MOSFET, P Channel, 20 V, 3.2 A, 0.085 ohm, SOT-23, Surface Mount ONSEMI The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications. • Leading -20V Tr...
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BAS40-04
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SC21372 |
Small Signal Schottky Diode, Dual Series, 40 V, 200 mA, 380 mV, 200 mA, 125 °C MULTICOMP PRO The BAS40-04 is a surface mount Barrier Diode features low turn-on voltage and fast switching. It is used for high speed switching applications, circuit protecting and voltage clamping. • PN Junction guard ring for transient and ESD protection • 40V DC Rev...
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BC847ALT1G
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SC16047 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847ALT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive l...
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