RF FET Transistors

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MRF101AN
MRF101AN - RF FET Transistor, 133V, 182W, 1.8MHz, 250MHz, TO-220

SC15952

 
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RoHS

RF FET Transistor, 133V, 182W, 1.8MHz, 250MHz, TO-220

NXP

These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz. • Mirror ...

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1+ £16.67 (£20.00) 10+ £14.55 (£17.46) 100+ £12.74 (£15.29)

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133V - 182W 1.8MHz 250MHz TO-220 3Pins 175°C MRF101AN; MRF101BN
BF998E6327HTSA1
BF998E6327HTSA1 - RF FET Transistor, 12 V, 30 mA, 200 mW

SC16791

RF FET Transistor, 12 V, 30 mA, 200 mW

INFINEON

The BF 998 E6327 is a silicon N-channel MOSFET Triode for low-noise and gain-controlled input stage up to 1GHz. • Short-channel transistor with high S/C quality factor • Qualified according AEC-Q101

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1+ £0.21 (£0.25) 10+ £0.12 (£0.14) 100+ £0.10 (£0.12)

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12V 30mA 200mW - - - 4Pins 150°C -
J111
J111 - RF FET Transistor, 35 V, 625 mW, TO-92

SC12586

RF FET Transistor, 35 V, 625 mW, TO-92

ONSEMI

The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation

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5+ £0.20 (£0.24) 25+ £0.17 (£0.20)

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35V - 625mW - - TO-92 3Pins 150°C -