Ferroelectric RAM (FRAM), 64 Kbit 8K x 8 I2C, 1 MHz, 2.7 V to 3.65 V Supply, SOIC 8 Pin - 

FM24CL64B-GTR is a 64-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. The FM24CL64B is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the FM24CL64B ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.