Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
Price Ex. VAT (Inc. VAT)
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Quantity | Zener Voltage Nom | Power Dissipation | Diode Case Style | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| Sort Acending Sort Decending | Sort Acending Sort Decending | Sort Acending Sort Decending | Sort Acending Sort Decending | Sort Acending Sort Decending | Sort Acending Sort Decending | Sort Acending Sort Decending | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX79-C8V2.
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SC05701 |
Zener Single Diode, 8.2 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Zener Voltage Nom : 8.2V • Power Dissipation : 500mW • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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8.2V | 500mW | DO-35 | 2Pins | 200°C | BZX79 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STGW30NC120HD
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SC09975 |
IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins STMICROELECTRONICS The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGB...
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- | 220W | - | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-2KBP04
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SC07490 |
Bridge Rectifier, Single Phase, 400 V, 2 A, SIP, 4 Pins, 1 V VISHAY The VS-2KBP04 is a 4-pin single-phase Bridge Rectifier Diode consisting of four single diodes connected as a full bridge and intended for general applications. • Suitable for printed circuit board mounting • Compact construction • High surge current capabi...
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- | - | - | 4Pins | 150°C | VS-2KBP Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP2955
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SC06789 |
Transistor, PNP, TO3P MULTICOMP PRO The TIP2955 is a -60V Silicon PNP Complementary Power Transistor designed for general purpose amplifier and low speed switching applications. • DC current gain (hfe = 20 to 100 at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at ...
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- | 90W | - | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT03C33-TR
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SC07140 |
Zener Single Diode, 33 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...
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33V | 3.25W | SOD-57 | 2Pins | 175°C | BZT03 Series | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5349BG
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SC07176 |
Zener Single Diode, 12 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N53 series from On Semiconductor are axial leaded zener voltage regulators in 017AA package. • Zener voltage Vz range from 3.3V to 200V • Maximum power dissipation of 5W • Operating temperature range -65°C to 200°C • Maximum surge current IFSM range f...
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12V | 5W | 017AA | 2Pins | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUR820G
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SC07382 |
Fast / Ultrafast Diode, 200 V, 8 A, Single, 975 mV, 35 ns, 100 A ONSEMI The MUR820G is a SWITCHMODE™ Power Rectifier with moulded epoxy case. It is designed for use in switching power supplies, inverters and as free-wheeling diodes. • All external surfaces corrosion-resistant and terminal leads are readily solderable • Ultra-f...
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- | - | TO-220AC | - | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4424A
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SC06970 |
Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.
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- | 570mW | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX453.
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SCZTX453 |
NPN 120V 1A 1W Transistor DIODES INC. • Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 200°C
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- | 1W | - | 3Pins | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP4424A
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SC06977 |
Power MOSFET, P Channel, 240 V, 200 mA, 9 ohm, TO-226AA, Through Hole DIODES INC. The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold
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- | 750mW | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5367BG
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SC07193 |
Zener Single Diode, 43 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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43V | 5W | 017AA | 2Pins | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530NPBF
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SC08215 |
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole INFINEON The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...
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1+ £0.76 (£0.91) 10+ £0.59 (£0.71) 50+ £0.45 (£0.54) |
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- | 63W | - | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107B
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SC06645 |
Si-NPN Uni 50V 0.2A 0.3W Transistor MULTICOMP PRO The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...
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- | 600mW | - | 3Pins | 200°C | Multicomp Pro Bipolar NPN Transistor | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9024NPBF
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SC11062 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole INFINEON The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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- | 38W | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15031.
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SC01309 |
Transistor, TO220 MULTICOMP PRO • Power Dissipation : 50W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 50W | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9530NPBF
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SC08220 |
Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...
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- | 79W | - | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP50N06
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SC08222 |
Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole ONSEMI The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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- | 131W | - | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C13.
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SC05706 |
Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Zener Voltage Nom : 13V • Power Dissipation : 500mW • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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13V | 500mW | DO-35 | 2Pins | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU4J-E3/45
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SC07499 |
Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V VISHAY The GBU4J-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...
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- | - | - | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3906
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SC08424 |
Transistor, PNP, TO92 MULTICOMP PRO The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...
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- | 625mW | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C47-TR
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SC07144 |
Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY • BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...
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47V | 3.25W | SOD-57 | 2Pins | 175°C | BZT03 Series | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX70H
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SC06594 |
Transistor, NPN SOT23 NXP The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code
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- | 250mW | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTW69-600
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SC07559 |
Thyristor, 32A, 600V, TO218 STMICROELECTRONICS • Operating Temperature Max : 125°C
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- | - | - | - | 125°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UF5408.
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SCUF5408 |
Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A VISHAY • Diode Case Style : DO-201AD • Operating Temperature Max : 150°C • Product Range : UF540
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- | - | DO-201AD | - | 150°C | UF540 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD241C
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SC06745 |
Transistor, NPN, TO220 STMICROELECTRONICS The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...
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- | 40W | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























