Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Zener Voltage Nom Power Dissipation Diode Case Style No. of Pins Operating Temperature Max Product Range Qualification
 
 
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BZX79-C8V2.
BZX79-C8V2. - Zener Single Diode, 8.2 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05701

Zener Single Diode, 8.2 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Zener Voltage Nom : 8.2V • Power Dissipation : 500mW • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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8.2V 500mW DO-35 2Pins 200°C BZX79 -
STGW30NC120HD
STGW30NC120HD - IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

SC09975

IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

STMICROELECTRONICS

The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGB...

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- 220W - 3Pins 150°C - -
VS-2KBP04
VS-2KBP04 - Bridge Rectifier, Single Phase, 400 V, 2 A, SIP, 4 Pins, 1 V

SC07490

Bridge Rectifier, Single Phase, 400 V, 2 A, SIP, 4 Pins, 1 V

VISHAY

The VS-2KBP04 is a 4-pin single-phase Bridge Rectifier Diode consisting of four single diodes connected as a full bridge and intended for general applications. • Suitable for printed circuit board mounting • Compact construction • High surge current capabi...

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- - - 4Pins 150°C VS-2KBP Series -
TIP2955
TIP2955 - Transistor, PNP, TO3P

SC06789

Transistor, PNP, TO3P

MULTICOMP PRO

The TIP2955 is a -60V Silicon PNP Complementary Power Transistor designed for general purpose amplifier and low speed switching applications. • DC current gain (hfe = 20 to 100 at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at ...

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- 90W - 3Pins 150°C - -
BZT03C33-TR
BZT03C33-TR - Zener Single Diode, 33 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07140

Zener Single Diode, 33 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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33V 3.25W SOD-57 2Pins 175°C BZT03 Series AEC-Q101
1N5349BG
1N5349BG - Zener Single Diode, 12 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07176

Zener Single Diode, 12 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N53 series from On Semiconductor are axial leaded zener voltage regulators in 017AA package. • Zener voltage Vz range from 3.3V to 200V • Maximum power dissipation of 5W • Operating temperature range -65°C to 200°C • Maximum surge current IFSM range f...

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12V 5W 017AA 2Pins 200°C 1N53 Series -
MUR820G
MUR820G - Fast / Ultrafast Diode, 200 V, 8 A, Single, 975 mV, 35 ns, 100 A

SC07382

Fast / Ultrafast Diode, 200 V, 8 A, Single, 975 mV, 35 ns, 100 A

ONSEMI

The MUR820G is a SWITCHMODE™ Power Rectifier with moulded epoxy case. It is designed for use in switching power supplies, inverters and as free-wheeling diodes. • All external surfaces corrosion-resistant and terminal leads are readily solderable • Ultra-f...

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- - TO-220AC - 175°C - -
ZVN4424A
ZVN4424A - Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

SC06970

Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.

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- 570mW - 3Pins 150°C - -
ZTX453.
ZTX453. - NPN 120V 1A 1W Transistor

SCZTX453

NPN 120V 1A 1W Transistor

DIODES INC.

• Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 200°C

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- 1W - 3Pins 200°C - -
ZVP4424A
ZVP4424A - Power MOSFET, P Channel, 240 V, 200 mA, 9 ohm, TO-226AA, Through Hole

SC06977

Power MOSFET, P Channel, 240 V, 200 mA, 9 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold

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- 750mW - 3Pins 150°C - -
1N5367BG
1N5367BG - Zener Single Diode, 43 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07193

Zener Single Diode, 43 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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43V 5W 017AA 2Pins 200°C 1N53 Series -
IRF530NPBF
IRF530NPBF - Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

SC08215

Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

INFINEON

The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...

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- 63W - 3Pins 175°C HEXFET Series -
BC107B
BC107B - Si-NPN Uni 50V 0.2A 0.3W Transistor

SC06645

Si-NPN Uni 50V 0.2A 0.3W Transistor

MULTICOMP PRO

The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...

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- 600mW - 3Pins 200°C Multicomp Pro Bipolar NPN Transistor -
IRFU9024NPBF
IRFU9024NPBF - Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

SC11062

Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

INFINEON

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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- 38W - 3Pins 150°C - -
MJE15031.
MJE15031. - Transistor, TO220

SC01309

Transistor, TO220

MULTICOMP PRO

• Power Dissipation : 50W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 50W - 3Pins 150°C - -
IRF9530NPBF
IRF9530NPBF - Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

SC08220

Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...

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- 79W - 3Pins 175°C HEXFET Series -
RFP50N06
RFP50N06 - Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

SC08222

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

ONSEMI

The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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- 131W - 3Pins 175°C - -
BZX79-C13.
BZX79-C13. - Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05706

Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Zener Voltage Nom : 13V • Power Dissipation : 500mW • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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13V 500mW DO-35 2Pins 200°C BZX79 -
GBU4J-E3/45
GBU4J-E3/45 - Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

SC07499

Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

VISHAY

The GBU4J-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...

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- - - 4Pins 150°C - -
2N3906
2N3906 - Transistor, PNP, TO92

SC08424

Transistor, PNP, TO92

MULTICOMP PRO

The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...

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- 625mW - 3Pins 150°C - -
BZT03C47-TR
BZT03C47-TR - Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07144

Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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47V 3.25W SOD-57 2Pins 175°C BZT03 Series AEC-Q101
BCX70H
BCX70H - Transistor, NPN SOT23

SC06594

Transistor, NPN SOT23

NXP

The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code

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- 250mW - 3Pins 150°C - -
BTW69-600
BTW69-600 - Thyristor, 32A, 600V, TO218

SC07559

Thyristor, 32A, 600V, TO218

STMICROELECTRONICS

• Operating Temperature Max : 125°C

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- - - - 125°C - -
UF5408.
UF5408. - Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

SCUF5408

Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

VISHAY

• Diode Case Style : DO-201AD • Operating Temperature Max : 150°C • Product Range : UF540

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- - DO-201AD - 150°C UF540 -
BD241C
BD241C - Transistor, NPN, TO220

SC06745

Transistor, NPN, TO220

STMICROELECTRONICS

The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...

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- 40W - 3Pins 150°C - -