Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP3710PBF.
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SC11171 |
Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole INFINEON The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 100V | 57A | 0.025ohm | TO-247AC | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD682G
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SC06884 |
Darlington Transistor, TO126 ONSEMI The BD682G is a PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications. • Monolithic construction • Complementary with BD681
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- | - | - | - | - | Through Hole | - | - | - | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV27-200
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SC07833 |
Fast / Ultrafast Diode, 200 V, 2 A, Single, 1.07 V, 25 ns, 50 A UNBRANDED
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IPW60R045CP
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SC11154 |
Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole INFINEON The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 60A | 0.04ohm | TO-247 | Through Hole | 10V | 3V | 431W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5353BG
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SC07180 |
Zener Single Diode, 16 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5353BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and lead is readily solderable. The voltage regulator has tight limits and better...
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- | - | - | - | - | - | - | - | 5W | 2Pins | 200°C | 1N53 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE5731AG
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SC06809 |
Transistor, PNP TO220 ONSEMI The MJE5731AG is a PNP Bipolar Power Transistor designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • PNP complements to the TIP47 thru TIP50 series
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- | - | - | - | TO-220 | Through Hole | - | - | 2W | 3Pins | 150°C | MJxxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU6K-E3/45
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SC07506 |
Bridge Rectifier, Single Phase, 800 V, 6 A, SIP, 4 Pins, 1 V VISHAY The GBU6K-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | GBU6K | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU401
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SC09275 |
Bridge Rectifier, Glass Passivated, Single Phase, 50 V, 4 A, SIP, 4 Pins, 1 V TAIWAN SEMICONDUCTOR The GBU401 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | GBU40x Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA16-600BWRG
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SC11516 |
Triac, 16A, 600V, TO220AB STMICROELECTRONICS The BTA16-600BWRG is a 3-pin Snubberless Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal...
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- | - | - | - | - | - | - | - | - | 3Pins | 125°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA25-600B
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SC07588 |
Triac, 25A, 600V, RD-91 STMICROELECTRONICS The BTA25-600B is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal resis...
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- | - | - | - | - | - | - | - | - | 3Pins | 125°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5388BG
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SC07209 |
Zener Single Diode, 200 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5388BG is a Surmetic™ 40 Zener Voltage Regulator Diode with void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and leads are readily solderable finish, cathode indicated by polarity band, tight limits ...
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- | - | - | - | - | - | - | - | 5W | 2Pins | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BYG10M-E3/TR
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SC11346 |
Standard Recovery Diode, 1 kV, 1.5 A, Single, 1.15 V, 4 µs, 30 A VISHAY The BYG10M-E3/TR is a standard Avalanche Sinterglass Diode suitable for use in surface mounting and general purpose rectifier applications. • Glass-passivated junction • High surge current capability • Wave and reflow solderable • Low reverse current
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2002A
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SC08600 |
Darlington Array 7 NPN, 2002, DIP16 STMICROELECTRONICS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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- | - | - | - | - | Through Hole | - | - | - | 16Pins | 85°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF630NPBF
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SC11083 |
Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole INFINEON The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...
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N Channel | 200V | 9.3A | 0.3ohm | TO-220AB | Through Hole | 10V | 4V | 82W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTF3055L108T1G
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SC11060 |
Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount ONSEMI The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 3A | 0.12ohm | SOT-223 | Surface Mount | 5V | 1.68V | 2.1W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C7V5
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SC07093 |
Zener Single Diode, 7.5 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C NXP The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...
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- | - | - | - | - | - | - | - | 1W | 2Pins | 200°C | BZV85 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MCR106-8G
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SC07575 |
Thyristor, 4A, 600V, TO126 ONSEMI The MCR106-8G is a 3-pin sensitive-gate Reverse Blocking Thyristor for high volume consumer applications such as temperature and speed control, process and remote control and warning systems where reliability of operation is important. The SCR has glass-pa...
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- | - | - | - | - | - | - | - | - | 3Pins | 110°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2214LT1G
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SC10964 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm ONSEMI The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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- | - | - | - | SOT-23 | Surface Mount | - | - | 400mW | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS270
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SC06958 |
Power MOSFET, N Channel, 60 V, 400 mA, 1.2 ohm, TO-92, Through Hole ONSEMI The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 400mA | 1.2ohm | - | Through Hole | 10V | 2.1V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-P102W
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SC11496 |
Thyristor/Diode Module, 25A VISHAY The VS-P102W is a 25A passivated assembled circuit elements Power Module consists of power thyristors and power diodes configured in a single package. The integrated power circuit with its isolating base plate mechanical designs are greatly simplified givi...
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- | - | - | - | - | - | - | - | - | 6Pins | 125°C | VS-P100 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5354BG
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SC07181 |
Zener Single Diode, 17 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5354BG is a 2-pin 17V 5W Zener Voltage Regulator with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The Surmetic™ 40 Zener voltage regulator offers protection in all co...
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- | - | - | - | - | - | - | - | 5W | 2Pins | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK50Z.
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SC06019 |
Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 125W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 10A | 0.48ohm | TO-220 | Through Hole | 10V | 3.75V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0605
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SC07011 |
Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...
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P Channel | 60V | 180mA | 5ohm | - | Surface Mount | 10V | 1.7V | 360mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9024PBF
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SC11066 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole VISHAY The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...
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P Channel | 60V | 8.8A | 0.28ohm | TO-251AA | Through Hole | 10V | 4V | 50W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD679
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SC06880 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...
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- | - | - | - | - | Through Hole | - | - | - | 3Pins | 150°C | - | - |