Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRFP3710PBF.
IRFP3710PBF. - Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

SC11171

Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

INFINEON

The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 57A 0.025ohm TO-247AC Through Hole 10V 4V 200W 3Pins 175°C - -
BD682G
BD682G - Darlington Transistor, TO126

SC06884

Darlington Transistor, TO126

ONSEMI

The BD682G is a PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications. • Monolithic construction • Complementary with BD681

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- - - - - Through Hole - - - 3Pins 150°C - -
BYV27-200
BYV27-200 - Fast / Ultrafast Diode, 200 V, 2 A, Single, 1.07 V, 25 ns, 50 A

SC07833

Fast / Ultrafast Diode, 200 V, 2 A, Single, 1.07 V, 25 ns, 50 A

UNBRANDED

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IPW60R045CP
IPW60R045CP - Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

SC11154

Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

INFINEON

The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...

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N Channel 650V 60A 0.04ohm TO-247 Through Hole 10V 3V 431W 3Pins 150°C - -
1N5353BG
1N5353BG - Zener Single Diode, 16 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07180

Zener Single Diode, 16 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5353BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and lead is readily solderable. The voltage regulator has tight limits and better...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
MJE5731AG
MJE5731AG - Transistor, PNP TO220

SC06809

Transistor, PNP TO220

ONSEMI

The MJE5731AG is a PNP Bipolar Power Transistor designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • PNP complements to the TIP47 thru TIP50 series

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- - - - TO-220 Through Hole - - 2W 3Pins 150°C MJxxxx -
GBU6K-E3/45
GBU6K-E3/45 - Bridge Rectifier, Single Phase, 800 V, 6 A, SIP, 4 Pins, 1 V

SC07506

Bridge Rectifier, Single Phase, 800 V, 6 A, SIP, 4 Pins, 1 V

VISHAY

The GBU6K-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...

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- - - - - - - - - 4Pins 150°C GBU6K -
GBU401
GBU401 - Bridge Rectifier, Glass Passivated, Single Phase, 50 V, 4 A, SIP, 4 Pins, 1 V

SC09275

Bridge Rectifier, Glass Passivated, Single Phase, 50 V, 4 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU401 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...

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- - - - - - - - - 4Pins 150°C GBU40x Series -
BTA16-600BWRG
BTA16-600BWRG - Triac, 16A, 600V, TO220AB

SC11516

Triac, 16A, 600V, TO220AB

STMICROELECTRONICS

The BTA16-600BWRG is a 3-pin Snubberless Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal...

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- - - - - - - - - 3Pins 125°C - -
BTA25-600B
BTA25-600B - Triac, 25A, 600V, RD-91

SC07588

Triac, 25A, 600V, RD-91

STMICROELECTRONICS

The BTA25-600B is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal resis...

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- - - - - - - - - 3Pins 125°C - -
1N5388BG
1N5388BG - Zener Single Diode, 200 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07209

Zener Single Diode, 200 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5388BG is a Surmetic™ 40 Zener Voltage Regulator Diode with void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and leads are readily solderable finish, cathode indicated by polarity band, tight limits ...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
BYG10M-E3/TR
BYG10M-E3/TR - Standard Recovery Diode, 1 kV, 1.5 A, Single, 1.15 V, 4 µs, 30 A

SC11346

Standard Recovery Diode, 1 kV, 1.5 A, Single, 1.15 V, 4 µs, 30 A

VISHAY

The BYG10M-E3/TR is a standard Avalanche Sinterglass Diode suitable for use in surface mounting and general purpose rectifier applications. • Glass-passivated junction • High surge current capability • Wave and reflow solderable • Low reverse current

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- - - - - - - - - 2Pins 150°C - -
ULN2002A
ULN2002A - Darlington Array 7 NPN, 2002, DIP16

SC08600

Darlington Array 7 NPN, 2002, DIP16

STMICROELECTRONICS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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- - - - - Through Hole - - - 16Pins 85°C - -
IRF630NPBF
IRF630NPBF - Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

SC11083

Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

INFINEON

The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...

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N Channel 200V 9.3A 0.3ohm TO-220AB Through Hole 10V 4V 82W 3Pins 175°C - -
NTF3055L108T1G
NTF3055L108T1G - Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

SC11060

Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

ONSEMI

The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 3A 0.12ohm SOT-223 Surface Mount 5V 1.68V 2.1W 4Pins 175°C - -
BZV85-C7V5
BZV85-C7V5 - Zener Single Diode, 7.5 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07093

Zener Single Diode, 7.5 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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- - - - - - - - 1W 2Pins 200°C BZV85 -
MCR106-8G
MCR106-8G - Thyristor, 4A, 600V, TO126

SC07575

Thyristor, 4A, 600V, TO126

ONSEMI

The MCR106-8G is a 3-pin sensitive-gate Reverse Blocking Thyristor for high volume consumer applications such as temperature and speed control, process and remote control and warning systems where reliability of operation is important. The SCR has glass-pa...

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- - - - - - - - - 3Pins 110°C - -
MMUN2214LT1G
MMUN2214LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

SC10964

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

ONSEMI

The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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- - - - SOT-23 Surface Mount - - 400mW - 150°C - -
BS270
BS270 - Power MOSFET, N Channel, 60 V, 400 mA, 1.2 ohm, TO-92, Through Hole

SC06958

Power MOSFET, N Channel, 60 V, 400 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 400mA 1.2ohm - Through Hole 10V 2.1V 625mW 3Pins 150°C - -
VS-P102W
VS-P102W - Thyristor/Diode Module, 25A

SC11496

Thyristor/Diode Module, 25A

VISHAY

The VS-P102W is a 25A passivated assembled circuit elements Power Module consists of power thyristors and power diodes configured in a single package. The integrated power circuit with its isolating base plate mechanical designs are greatly simplified givi...

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- - - - - - - - - 6Pins 125°C VS-P100 -
1N5354BG
1N5354BG - Zener Single Diode, 17 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07181

Zener Single Diode, 17 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5354BG is a 2-pin 17V 5W Zener Voltage Regulator with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The Surmetic™ 40 Zener voltage regulator offers protection in all co...

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STP11NK50Z.
STP11NK50Z. - Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

SC06019

Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 125W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 500V 10A 0.48ohm TO-220 Through Hole 10V 3.75V 125W 3Pins 150°C - -
NDS0605
NDS0605 - Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

SC07011

Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...

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P Channel 60V 180mA 5ohm - Surface Mount 10V 1.7V 360mW 3Pins 150°C - -
IRFU9024PBF
IRFU9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

SC11066

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...

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P Channel 60V 8.8A 0.28ohm TO-251AA Through Hole 10V 4V 50W 3Pins 150°C - -
BD679
BD679 - Darlington Transistor, TO126

SC06880

Darlington Transistor, TO126

STMICROELECTRONICS

The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...

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- - - - - Through Hole - - - 3Pins 150°C - -