Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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ZVN4424A
ZVN4424A - Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

SC06970

Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.

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N Channel 240V 260mA 6ohm TO-226AA Through Hole 10V 1.3V 570mW 3Pins 150°C - -
ZTX453.
ZTX453. - NPN 120V 1A 1W

SCZTX453

NPN 120V 1A 1W

DIODES INC.

• Transistor Case Style : E-Line • Transistor Mounting : Through Hole • Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 200°C

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- - - - E-Line Through Hole - - 1W 3Pins 200°C - -
BAT754S
BAT754S - Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

SC11302

Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

NXP

The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...

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- - - - - - - - - 3Pins 125°C BAT754 -
ZVP4424A
ZVP4424A - Power MOSFET, P Channel, 240 V, 200 mA, 15 ohm, TO-226AA, Through Hole

SC06977

Power MOSFET, P Channel, 240 V, 200 mA, 15 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold

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P Channel 240V 200mA 15ohm TO-226AA Through Hole 10V 1.4V 750mW 3Pins 150°C - -
STTH6002CW
STTH6002CW - Fast / Ultrafast Diode, 200 V, 30 A, Dual Common Cathode, 1.05 V, 22 ns, 330 A

SC11399

Fast / Ultrafast Diode, 200 V, 30 A, Dual Common Cathode, 1.05 V, 22 ns, 330 A

STMICROELECTRONICS

The STTH6002CW is a high efficiency Ultrafast Diode features high surge current capability, low forward and reverse recovery times. This dual centre tab rectifier is suitable for high frequency DC to DC converters. This device is intended for use in low vo...

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- - - - - - - - - - 175°C - -
1N5367BG
1N5367BG - Zener Single Diode, 43 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07193

Zener Single Diode, 43 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
IRF530NPBF
IRF530NPBF - Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

SC08215

Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

INFINEON

The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...

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N Channel 100V 17A 0.09ohm - Through Hole 10V 4V 63W 3Pins 175°C - -
IRFU9024NPBF
IRFU9024NPBF - Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

SC11062

Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

INFINEON

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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P Channel 55V 11A 0.175ohm - Through Hole 10V 4V 38W 3Pins 150°C - -
BC107B
BC107B - Si-NPN Uni 50V 0.2A 0.3W

SC06645

Si-NPN Uni 50V 0.2A 0.3W

MULTICOMP PRO

The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...

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- - - - TO-18 Through Hole - - 600mW 3Pins 200°C Multicomp Pro Bipolar NPN Transistor -
MJE15031.
MJE15031. - Transistor, TO220

SC01309

Transistor, TO220

MULTICOMP PRO

• Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Power Dissipation : 50W • No. of Pins : 3Pins

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- - - - TO-220 Through Hole - - 50W 3Pins - - -
IRF9530NPBF
IRF9530NPBF - Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

SC08220

Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...

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P Channel 100V 13A 0.2ohm - Through Hole 10V 4V 79W 3Pins 175°C - -
RFP50N06
RFP50N06 - Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

SC08222

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

ONSEMI

The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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N Channel 60V 50A 0.022ohm TO-220AB Through Hole 10V 4V 131W 3Pins 175°C - -
BZX79-C13.
BZX79-C13. - Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05706

Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
GBU4J-E3/45
GBU4J-E3/45 - Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

SC07499

Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

VISHAY

The GBU4J-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...

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- - - - - - - - - 4Pins 150°C - -
2N3906
2N3906 - Transistor, PNP, TO92

SC08424

Transistor, PNP, TO92

MULTICOMP PRO

The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...

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- - - - TO-92 Through Hole - - 625mW 3Pins 150°C - -
BZT03C47-TR
BZT03C47-TR - Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07144

Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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- - - - - - - - 3.25W 2Pins 175°C BZT03 Series AEC-Q101
UF5408.
UF5408. - Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

SCUF5408

Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

VISHAY

• Operating Temperature Max : 150°C • Product Range : UF540

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- - - - - - - - - - 150°C UF540 -
BD241C
BD241C - Transistor, NPN, TO220

SC06745

Transistor, NPN, TO220

STMICROELECTRONICS

The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...

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- - - - TO-220 Through Hole - - 40W 3Pins 150°C - -
BCX70H
BCX70H - Transistor, NPN SOT23

SC06594

Transistor, NPN SOT23

NXP

The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code

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- - - - SOT-23 Surface Mount - - 250mW 3Pins 150°C - -
BZT03C100-TR
BZT03C100-TR - Zener Single Diode, 100 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07152

Zener Single Diode, 100 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03C100-TR is a Zener Diode with surge current characteristics. The BZT03 series Zener diode has glass passivated junction and Zener voltage of 100V. • Clamping time in picoseconds • 5mA Test current • 60Ω at 200mA Dynamic resistance • 5μA at 82V Max...

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- - - - - - - - 3.25W 2Pins 175°C BZT03 Series AEC-Q101
MJ15024G
MJ15024G - Transistor, NPN, TO3

SC06782

Transistor, NPN, TO3

ONSEMI

The MJ15024G is a 250V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage ...

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- - - - TO-3 Through Hole - - 250W 2Pins 200°C - -
BZT03C18-TR
BZT03C18-TR - Zener Single Diode, 18 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07134

Zener Single Diode, 18 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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UF5404.
UF5404. - Fast / Ultrafast Diode, 400 V, 3 A, Single, 1 V, 50 ns, 150 A

SCUF5404

Fast / Ultrafast Diode, 400 V, 3 A, Single, 1 V, 50 ns, 150 A

VISHAY

• Product Range : UF540

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- - - - - - - - - - - UF540 -
STW20NK50Z.
STW20NK50Z. - Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole

SC06409

Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 17A • Drain Source On State Resistance : 0.23ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 190W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 500V 17A 0.23ohm TO-247 Through Hole 10V 3.75V 190W 3Pins 150°C - -
TIP3055
TIP3055 - Transistor, NPN, TO218

SC06790

Transistor, NPN, TO218

STMICROELECTRONICS

The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications. • Collector to e...

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- - - - TO-247 Through Hole - - 90W 3Pins 150°C - -