Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Diode Configuration Repetitive Peak Reverse Voltage Average Forward Current Forward Voltage Max Forward Surge Current Operating Temperature Max Diode Case Style No. of Pins Diode Mounting Product Range Qualification
 
 
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BAT754A
BAT754A - Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

SC11306

Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

NXP

The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...

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Dual Common Anode 30V 200mA 260mV 600mA 125°C SOT-23 3Pins Surface Mount BAT754 -
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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- - - - - 175°C - 3Pins - - -
TIP141
TIP141 - Darlington Transistor, TO247

SC06870

Darlington Transistor, TO247

MULTICOMP PRO

The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...

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- - - - - 150°C - 3Pins - - -
ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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- - - - - 85°C - 18Pins - Darlington Array -
BC182L
BC182L - Transistor, NPN, TO92

SC12579

Transistor, NPN, TO92

MULTICOMP PRO

The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...

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- - - - - 150°C - 3Pins - Multicomp Pro Bipolar Transistors -
ZVP2110A
ZVP2110A - Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

SC06974

Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.

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- - - - - 150°C - 3Pins - - -
1N5819
1N5819 - Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

SC07409

Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

STMICROELECTRONICS

The 1N5819 from STMicroelectronics is an axial leaded low drop power schottky rectifier in DO-41 package. These diodes are featured with very small conduction losses, negligible switching losses, extremely fast switching and low forward voltage drop. Typic...

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Single 40V 1A 550mV 25A 150°C DO-41 (DO-204AL) 2Pins Through Hole - -
2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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- - - - - 150°C - 3Pins - - -
BCW33
BCW33 - Transistor, NPN, SOT23

SC10626

Transistor, NPN, SOT23

NXP

The BCW33 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D3 Marking code

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- - - - - 150°C - 3Pins - - -
IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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- - - - - 175°C - 3Pins - - -
MMUN2111LT1G
MMUN2111LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

SC10965

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

ONSEMI

The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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- - - - - 150°C - - - - -
1N5347BG
1N5347BG - Zener Single Diode, 10 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07174

Zener Single Diode, 10 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5347BG is a 2-pin 10V 5W Zener Voltage Regulator with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The Surmetic™ 40 Zener voltage regulator offers protection in all co...

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- - - - - 200°C 017AA 2Pins Through Hole 1N53 Series -
IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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- - - - - 150°C - 3Pins - - -
BZV55-C9V1
BZV55-C9V1 - Zener Single Diode, 9.1 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11222

Zener Single Diode, 9.1 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

• Operating Temperature Max : 200°C • Diode Case Style : SOD-80C • No. of Pins : 2Pins • Diode Mounting : Surface Mount • Product Range : BZV55

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- - - - - 200°C SOD-80C 2Pins Surface Mount BZV55 -
IRLML2402PBF
IRLML2402PBF - Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

SC06986

Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...

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- - - - - 150°C - 3Pins - - -
VS-GBPC2512A
VS-GBPC2512A - Bridge Rectifier, Single Phase, 1.2 kV, 25 A, Module, 4 Pins, 1.1 V

SC07522

Bridge Rectifier, Single Phase, 1.2 kV, 25 A, Module, 4 Pins, 1.1 V

VISHAY

The VS-GBPC2512A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...

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- 1.2kV 25A 1.1V 400A 150°C - 4Pins - VS-GBPC Series -
BZT03C30-TR
BZT03C30-TR - Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07139

Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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- - - - - 175°C SOD-57 2Pins Through Hole BZT03 Series AEC-Q101
BC549C
BC549C - Transistor, NPN, TO92

SC12757

Transistor, NPN, TO92

MULTICOMP PRO

The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...

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- - - - - 150°C - 3Pins - Multicomp Pro Bipolar Transistor -
MBR160RLG
MBR160RLG - Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 750 mV

SC07405

Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 750 mV

ONSEMI

The MBR160RLG is an axial-lead Schottky Rectifier with an epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and m...

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Single 60V 1A 750mV 25A 150°C DO-41 (DO-204AL) 2Pins Through Hole - -
TIP50G
TIP50G - Transistor, NPN, TO220

SC06808

Transistor, NPN, TO220

ONSEMI

The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...

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- - - - - 150°C - 3Pins - TIPxxx -
FDN358P
FDN358P - Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

SC07005

Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

ONSEMI

The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...

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- - - - - 150°C - 3Pins - - -
BF259MC
BF259MC - Transistor, NPN TO39

SC06649

Transistor, NPN TO39

MULTICOMP PRO

• No. of Pins : 3Pins

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- - - - - - - 3Pins - - -
RFP12N10L
RFP12N10L - Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

SC11126

Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

ONSEMI

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...

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- - - - - 150°C - 3Pins - - -
FDN337N
FDN337N - Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

SC06984

Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...

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VNP10N07-E
VNP10N07-E - Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

SC11011

Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

STMICROELECTRONICS

The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...

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- - - - - 150°C - 3Pins - - -