Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Diode Configuration | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Forward Surge Current | Operating Temperature Max | Diode Case Style | No. of Pins | Diode Mounting | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT754A
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SC11306 |
Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C NXP The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...
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Dual Common Anode | 30V | 200mA | 260mV | 600mA | 125°C | SOT-23 | 3Pins | Surface Mount | BAT754 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9540NPBF
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SC08221 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole INFINEON The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP141
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SC06870 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2803A
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SC08607 |
Darlington Array 8 NPN, 2803, DIP18 STMICROELECTRONICS The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...
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- | - | - | - | - | 85°C | - | 18Pins | - | Darlington Array | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC182L
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SC12579 |
Transistor, NPN, TO92 MULTICOMP PRO The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...
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- | - | - | - | - | 150°C | - | 3Pins | - | Multicomp Pro Bipolar Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP2110A
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SC06974 |
Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5819
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SC07409 |
Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV STMICROELECTRONICS The 1N5819 from STMicroelectronics is an axial leaded low drop power schottky rectifier in DO-41 package. These diodes are featured with very small conduction losses, negligible switching losses, extremely fast switching and low forward voltage drop. Typic...
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Single | 40V | 1A | 550mV | 25A | 150°C | DO-41 (DO-204AL) | 2Pins | Through Hole | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000
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SC06951 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole ONSEMI The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW33
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SC10626 |
Transistor, NPN, SOT23 NXP The BCW33 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D3 Marking code
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540ZPBF
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SC11108 |
Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole INFINEON The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2111LT1G
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SC10965 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm ONSEMI The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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- | - | - | - | - | 150°C | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5347BG
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SC07174 |
Zener Single Diode, 10 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5347BG is a 2-pin 10V 5W Zener Voltage Regulator with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The Surmetic™ 40 Zener voltage regulator offers protection in all co...
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- | - | - | - | - | 200°C | 017AA | 2Pins | Through Hole | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9024PBF
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SC11199 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount VISHAY The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C9V1
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SC11222 |
Zener Single Diode, 9.1 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP • Operating Temperature Max : 200°C • Diode Case Style : SOD-80C • No. of Pins : 2Pins • Diode Mounting : Surface Mount • Product Range : BZV55
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- | - | - | - | - | 200°C | SOD-80C | 2Pins | Surface Mount | BZV55 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2402PBF
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SC06986 |
Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount INFINEON The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...
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VS-GBPC2512A
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SC07522 |
Bridge Rectifier, Single Phase, 1.2 kV, 25 A, Module, 4 Pins, 1.1 V VISHAY The VS-GBPC2512A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...
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- | 1.2kV | 25A | 1.1V | 400A | 150°C | - | 4Pins | - | VS-GBPC Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C30-TR
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SC07139 |
Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...
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- | - | - | - | - | 175°C | SOD-57 | 2Pins | Through Hole | BZT03 Series | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC549C
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SC12757 |
Transistor, NPN, TO92 MULTICOMP PRO The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...
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- | - | - | - | - | 150°C | - | 3Pins | - | Multicomp Pro Bipolar Transistor | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR160RLG
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SC07405 |
Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 750 mV ONSEMI The MBR160RLG is an axial-lead Schottky Rectifier with an epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and m...
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Single | 60V | 1A | 750mV | 25A | 150°C | DO-41 (DO-204AL) | 2Pins | Through Hole | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP50G
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SC06808 |
Transistor, NPN, TO220 ONSEMI The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...
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- | - | - | - | - | 150°C | - | 3Pins | - | TIPxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN358P
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SC07005 |
Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount ONSEMI The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...
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BF259MC
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SC06649 |
Transistor, NPN TO39 MULTICOMP PRO • No. of Pins : 3Pins
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RFP12N10L
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SC11126 |
Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole ONSEMI The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN337N
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SC06984 |
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount ONSEMI The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...
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VNP10N07-E
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SC11011 |
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole STMICROELECTRONICS The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - |