Single Bipolar Junction Transistors - BJT
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | Transition Frequency | Transistor Mounting | Transistor Case Style | DC Current Gain hFE | No. of Pins | DC Current Gain hFE Min | Operating Temperature Max | Qualification | Product Range | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3904
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SC10960 |
Transistor, NPN, TO92 ONSEMI The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....
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NPN | 40V | 200mA | 625mW | - | Through Hole | TO-92 | 100hFE | 3Pins | 100hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC557B
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SC09156 |
Transistor, PNP, 45V, 100mA, TO92 MULTICOMP PRO The BC557B is a PNP silicon planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction ...
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PNP | 45V | 100mA | 625mW | 150MHz | Through Hole | TO-92 | 200hFE | 3Pins | 200hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904
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SC15978 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 MULTICOMP PRO The 2N3904 from Multicomp Pro is a through hole, NPN silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence is suitable for switching and amplification. • Co...
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NPN | 40V | 200mA | 625mW | 300MHz | Through Hole | TO-92 | 300hFE | 3Pins | 300hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC547B
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SC08525 |
Transistor, NPN, TO92 ONSEMI The BC547B is a through hole, NPN epitaxial silicon transistor in TO-92 package. This device is designed for switching and amplification. • Collector to emitter breakdown voltage of 45V • Collector to emitter saturation voltage of 250mV • Power dissipation...
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NPN | 45V | 100mA | 1.5W | 300MHz | Through Hole | TO-92 | 200hFE | 3Pins | 200hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3704.
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SC06650 |
Transistor, NPN TO92 MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 999A • Transistor Mounting : Through Hole • Transistor Case Style : TO-92 • No. of Pins : 3Pins
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NPN | 30V | 999A | - | - | Through Hole | TO-92 | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33725TA
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SC13989 |
Transistor, Bipolar, NPN, 45V, TO92 ONSEMI The BC33725TA is a NPN Epitaxial Silicon Transistor, designed for use in general purpose amplifiers and switches applications. • 200°C/W Thermal Resistance, Junction-to-Ambient • Complement to BC327
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NPN | 45V | 800mA | 625mW | 100MHz | Through Hole | TO-92 | 400hFE | 3Pins | 400hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KSC1845FTA
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SC19265 |
Bipolar (BJT) Single Transistor, NPN, 120V, 50mA, 500mW, TO-226AA ONSEMI The KSC1845FTA is a NPN Epitaxial Silicon Transistor offers 120V collector base voltage and 50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSA992
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NPN | 120V | 50mA | 500mW | 110MHz | Through Hole | TO-226AA | 300hFE | 3Pins | 300hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUY69A
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SC06804 |
Transistor, NPN, TO3 MULTICOMP PRO The BUY69A is a NPN High Voltage Power Transistor designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Optimum dri...
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NPN | 400V | 10A | 100W | 10MHz | Through Hole | TO-3 | 15hFE | 2Pins | 15hFE | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD243C
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SC15745 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220 MULTICOMP PRO The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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NPN | 100V | 6A | 65W | 3MHz | Through Hole | TO-220 | 15hFE | 3Pins | 15hFE | 150°C | - | Multicomp Pro Bipolar NPN Transistors | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP42A
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SC06766 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • -65 to 150°C Operating junction temperature range • Multicomp Pro products ...
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PNP | 60V | 6A | 65W | 3MHz | Through Hole | TO-220 | 30hFE | 3Pins | 30hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4401
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SC15746 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92 MULTICOMP PRO The 2N4401 from Multicomp Pro is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications. • Collector emitter voltage (Vce) of 40V • Continuous collector...
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NPN | 40V | 600mA | 625mW | 250MHz | Through Hole | TO-92 | 100hFE | 3Pins | 100hFE | 150°C | - | Multicomp Pro Low Power NPN Bipolar Transistor | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC06580 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transition Frequency : 100MHz • Transistor Mounting : Surface Mount • Transistor Case Style : SOT-23 • DC Current Gain hFE : 100hFE • No. of Pins : 3Pins • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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NPN | 45V | 500mA | 250mW | 100MHz | Surface Mount | SOT-23 | 100hFE | 3Pins | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP141
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SC06870 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...
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NPN | 80V | 10A | 125W | - | Through Hole | TO-247 | 1000hFE | 3Pins | 1000hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC461
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SC13213 |
Transistor, BC461, PNP, TO39 MULTICOMP PRO The BC461 is a -60V Silicon PNP Planar Epitaxial Medium Power Transistor ideal for low frequency devices typically with current ratings 2A. • High performance • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products ...
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PNP | 60V | 600mA | 1W | 50MHz | Through Hole | TO-39 | 40hFE | 3Pins | 40hFE | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC182L
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SC12579 |
Transistor, NPN, TO92 MULTICOMP PRO The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...
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NPN | 50V | 100mA | 350mW | 150MHz | Through Hole | TO-92 | 125hFE | 3Pins | 125hFE | 150°C | - | Multicomp Pro Bipolar Transistors | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX38C
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SC06835 |
Darlington Transistor, E-Line DIODES INC. The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range
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NPN | 60V | 800mA | 1W | - | Through Hole | E-Line | 10000hFE | 3Pins | 10000hFE | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE13007
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SCMJE13007 |
NPN 400V 8A 80W ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 400V • Continuous Collector Current : 8A • Power Dissipation : 80W • Transition Frequency : 14MHz • Transistor Mounting : Through Hole • Transistor Case Style : TO-220 • DC Current Gain hFE : 40hFE • No. of Pins : 3Pins • DC Current Gain hFE Min : 40hFE • Operating Temperature Max : 150°C
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NPN | 400V | 8A | 80W | 14MHz | Through Hole | TO-220 | 40hFE | 3Pins | 40hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32C
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SC06765 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP32C is a -100V PNP Bipolar High Power Transistor with 40W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(Vce (sat) = 1.2V maximum at Ic = 3A) • Multicomp Pro products are ...
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PNP | 100V | 3A | 40W | 3MHz | Through Hole | TO-220 | 10hFE | 3Pins | 10hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15016G
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SC09270 |
Transistor, PNP, TO3 ONSEMI The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...
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PNP | 120V | 15A | 180W | 18MHz | Through Hole | TO-3 | 70hFE | 2Pins | 70hFE | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856
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SC06598 |
Transistor, PNP SOT23 NXP • Transistor Polarity : PNP • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Mounting : Surface Mount • Transistor Case Style : SOT-23 • DC Current Gain hFE : 125hFE • No. of Pins : 3Pins • DC Current Gain hFE Min : 125hFE • Operating Temperature Max : 150°C
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PNP | 65V | 100mA | 250mW | - | Surface Mount | SOT-23 | 125hFE | 3Pins | 125hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT3904
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SC10623 |
Transistor, NPN, SOT23 INFINEON • Transistor Polarity : NPN • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 200mA • Power Dissipation : 330mW • Transition Frequency : 270MHz • Transistor Mounting : Surface Mount • Transistor Case Style : SOT-23 • DC Current Gain hFE : 100hFE • No. of Pins : 3Pins • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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NPN | 40V | 200mA | 330mW | 270MHz | Surface Mount | SOT-23 | 100hFE | 3Pins | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5551
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SC06652 |
Si-N 180V 0.6A 0.31W TO92 Q14 ONSEMI The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...
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NPN | 160V | 600mA | 625mW | 150MHz | Through Hole | TO-92 | 80hFE | 3Pins | 80hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU406
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SC06796 |
Transistor, NPN, TO220 MULTICOMP PRO The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...
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NPN | 200V | 7A | 60W | 10MHz | Through Hole | TO-220 | 30hFE | 3Pins | 30hFE | 150°C | - | Multicomp Pro Bipolar Power Transistors NPN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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PNP | 60V | 10A | 70W | 40MHz | Through Hole | TO-220 | 60hFE | 3Pins | 60hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT653
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SC10978 |
Transistor, NPN, SOT223 DIODES INC. The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...
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NPN | 100V | 2A | 2W | 175MHz | Surface Mount | SOT-223 | 200hFE | 4Pins | 200hFE | 150°C | - | - |