Single Bipolar Junction Transistors - BJT

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Single Bipolar Junction Transistors - BJT


Introducing the Single Bipolar Junction Transistors - BJT, your go-to solution for all your electronic needs. With a wide range of options available, CPC offers industry-leading brands to ensure top-notch quality and reliability. Say goodbye to searching high and low for the perfect component, because we have everything you need right here. Whether you're a seasoned professional or a hobbyist, our Single Bipolar Junction Transistors - BJT will exceed your expectations. Order yours today and experience the best price guaranteed. Don't settle for anything less than excellence £� choose CPC for all your Single Bipolar Junction Transistors - BJT needs.

Bipolar Junction Transistor Arrays - BJT Pre-Biased / Digital Bipolar Transistors Bipolar RF Transistors
 
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  Manufacturer Part No Order Code Description / Manufacturer
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Transistor Polarity Collector Emitter Voltage V(br)ceo Collector Emitter Voltage Max DC Collector Current Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min DC Current Gain hFE Operating Temperature Max Product Range Qualification
 
 
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BC848CLT1G
BC848CLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

SC14981

Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

ONSEMI

The BC848CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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NPN - 30V - 100mA 300mW SOT-23 Surface Mount 3Pins 100MHz 100hFE - 150°C BCxxx AEC-Q101
BC846BLT1G.
BC846BLT1G. - Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

SC16025

Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD r...

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NPN - 65V 100mA 100mA 300mW SOT-23 Surface Mount 3Pins 100MHz 290hFE 290hFE 150°C - -
MMBT5551LT1G
MMBT5551LT1G - Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD

SC16063

Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified. • Halogen-free

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NPN - 160V 600mA 600mA 225mW SOT-23 Surface Mount 3Pins - 80hFE 80hFE 150°C MMBTxxxx AEC-Q101
SS8550DBU
SS8550DBU - Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

SC15798

Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

ONSEMI

The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050

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PNP - 25V - 1.5A 1W TO-226AA Through Hole 3Pins 200MHz 160hFE - 150°C - -
BC807-40LVL
BC807-40LVL - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

SC15934

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

NEXPERIA

• Transistor Polarity : PNP • Collector Emitter Voltage V(br)ceo : 45V • Collector Emitter Voltage Max : 45V • DC Collector Current : 500mA • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 80MHz • DC Current Gain hFE Min : 250hFE • DC Current Gain hFE : 250hFE • Operating Temperature Max : 150°C • Product Range : BC807L • Qualification : AEC-Q101

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PNP 45V 45V 500mA 500mA 250mW TO-236AB Surface Mount 3Pins 80MHz 250hFE 250hFE 150°C BC807L AEC-Q101
2SA1943OTU
2SA1943OTU - Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

SC15776

Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

ONSEMI

The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315

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PNP - 250V - 17A 150W TO-264 Through Hole 3Pins 30MHz 80hFE - 150°C - -
MMBT3906-7-F
MMBT3906-7-F - Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD

SC16087

Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD

DIODES INC.

The MMBT3906-7-F is a -40V PNP Small Signal Transistor with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, "Green" molding compound (UL94V-0). Complementary NPN type transistor is MM...

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PNP 40V 40V 200mA 200mA 310mW SOT-23 Surface Mount 3Pins 250MHz 100hFE 30hFE 150°C - -
MMBT2907ALT1G
MMBT2907ALT1G - Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 225mW, SOT-23

SC16036

Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 225mW, SOT-23

ONSEMI

The MMBT2907ALT1G is a -60V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -60VDC Collector to base voltage (VCBO) • -5VDC E...

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PNP 60V 60V 600mA 600mA 300mW SOT-23 Surface Mount 3Pins 200MHz 200hFE 200hFE 150°C MMBTxxxx AEC-Q101
MMBT2222A,215
MMBT2222A,215 - Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 600mA, 250mW, SOT-23, SMD

SC16040

Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 600mA, 250mW, SOT-23, SMD

NEXPERIA

The MMBT2222A is a NPN Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • High current • Low voltage • PNP complement is PMBT2907A • 7C Marking code

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NPN - 40V 600mA 600mA 250mW SOT-23 Surface Mount 3Pins 300MHz 100hFE 100hFE 150°C - AEC-Q101
BC807-40LT1G
BC807-40LT1G - Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD

SC19261

Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD

ONSEMI

The BC807-40LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a surface-mount package. It offers ESD protection, polarity reversal protection, data line protection, inductive load protection and...

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PNP - 45V - 500mA 300mW SOT-23 Surface Mount 3Pins 100MHz 250hFE - 150°C - -
MJE350
MJE350 - Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole

SC21514

Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole

STMICROELECTRONICS

The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complem...

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PNP - 300V - 500mA 20.8W TO-225AA Through Hole 3Pins - 240hFE - 150°C - -