Single Bipolar Junction Transistors - BJT
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Single Bipolar Junction Transistors - BJT
Introducing the Single Bipolar Junction Transistors - BJT, your go-to solution for all your electronic needs. With a wide range of options available, CPC offers industry-leading brands to ensure top-notch quality and reliability. Say goodbye to searching high and low for the perfect component, because we have everything you need right here. Whether you're a seasoned professional or a hobbyist, our Single Bipolar Junction Transistors - BJT will exceed your expectations. Order yours today and experience the best price guaranteed. Don't settle for anything less than excellence £� choose CPC for all your Single Bipolar Junction Transistors - BJT needs.
Bipolar Junction Transistor Arrays - BJT | Pre-Biased / Digital Bipolar Transistors | Bipolar RF Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848CLT1G
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SC14981 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE ONSEMI The BC848CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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NPN | - | 30V | - | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | - | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC846BLT1G.
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SC16025 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD r...
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NPN | - | 65V | 100mA | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 290hFE | 290hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5551LT1G
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SC16063 |
Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified. • Halogen-free
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NPN | - | 160V | 600mA | 600mA | 225mW | SOT-23 | Surface Mount | 3Pins | - | 80hFE | 80hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS8550DBU
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SC15798 |
Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA ONSEMI The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050
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PNP | - | 25V | - | 1.5A | 1W | TO-226AA | Through Hole | 3Pins | 200MHz | 160hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC807-40LVL
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SC15934 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : PNP • Collector Emitter Voltage V(br)ceo : 45V • Collector Emitter Voltage Max : 45V • DC Collector Current : 500mA • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 80MHz • DC Current Gain hFE Min : 250hFE • DC Current Gain hFE : 250hFE • Operating Temperature Max : 150°C • Product Range : BC807L • Qualification : AEC-Q101
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PNP | 45V | 45V | 500mA | 500mA | 250mW | TO-236AB | Surface Mount | 3Pins | 80MHz | 250hFE | 250hFE | 150°C | BC807L | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1943OTU
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SC15776 |
Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264 ONSEMI The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315
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PNP | - | 250V | - | 17A | 150W | TO-264 | Through Hole | 3Pins | 30MHz | 80hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906-7-F
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SC16087 |
Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD DIODES INC. The MMBT3906-7-F is a -40V PNP Small Signal Transistor with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, "Green" molding compound (UL94V-0). Complementary NPN type transistor is MM...
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PNP | 40V | 40V | 200mA | 200mA | 310mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 100hFE | 30hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2907ALT1G
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SC16036 |
Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 225mW, SOT-23 ONSEMI The MMBT2907ALT1G is a -60V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -60VDC Collector to base voltage (VCBO) • -5VDC E...
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PNP | 60V | 60V | 600mA | 600mA | 300mW | SOT-23 | Surface Mount | 3Pins | 200MHz | 200hFE | 200hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A,215
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SC16040 |
Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 600mA, 250mW, SOT-23, SMD NEXPERIA The MMBT2222A is a NPN Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • High current • Low voltage • PNP complement is PMBT2907A • 7C Marking code
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NPN | - | 40V | 600mA | 600mA | 250mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 100hFE | 100hFE | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-40LT1G
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SC19261 |
Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD ONSEMI The BC807-40LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a surface-mount package. It offers ESD protection, polarity reversal protection, data line protection, inductive load protection and...
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PNP | - | 45V | - | 500mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 250hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC21514 |
Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole STMICROELECTRONICS The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complem...
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PNP | - | 300V | - | 500mA | 20.8W | TO-225AA | Through Hole | 3Pins | - | 240hFE | - | 150°C | - | - |