Pre-Biased / Digital Bipolar Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
Price Ex. VAT (Inc. VAT)
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Quantity | Transistor Polarity | Collector Emitter Voltage Max NPN | Collector Emitter Voltage Max PNP | Continuous Collector Current | Base Input Resistor R1 | Base Emitter Resistor R2 | Transistor Case Style | Transistor Mounting | Power Dissipation | Operating Temperature Max | DC Current Gain hFE Min | Qualification | Product Range | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2216LT1G
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SC10967 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm ONSEMI The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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Single NPN | 50V | -888V | 100mA | 4.7kohm | -999kohm | SOT-23 | Surface Mount | 400mW | 150°C | 160hFE | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2211LT1G
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SC19267 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio) ONSEMI The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single trans...
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5+ £0.12 (£0.14) 10+ £0.07 (£0.08) 100+ £0.02 (£0.02) |
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Single NPN | 50V | -888V | 100mA | 10kohm | 10kohm | SOT-23 | - | 400mW | 150°C | 35hFE | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2111LT1G
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SC10965 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm ONSEMI The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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Single PNP | -888V | 50V | 100mA | 10kohm | 10kohm | SOT-23 | Surface Mount | 400mW | 150°C | 35hFE | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DTC114EET1G
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SC15943 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The DTC114EET1G is a NPN Digital Transistor with monolithic bias resistor network designed to replace a single device and its external resistor bias network. The bias resistor transistor contains a single transistor with a monolithic bias network consistin...
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Single NPN | 50V | -888V | 100mA | 10kohm | 10kohm | SOT-416 | Surface Mount | 300mW | 150°C | 35hFE | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2233LT1G
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SC15940 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm ONSEMI The MMUN2233LT1G is a NPN Transistor with monolithic bias resistor network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The ...
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Single NPN | 50V | -888V | 100mA | 4.7kohm | 47kohm | SOT-23 | Surface Mount | 400mW | 150°C | 80hFE | -888 | -888 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC143ET,215
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SC15946 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm NEXPERIA The PDTC143ET,215 is a NPN Resistor Equipped Transistor (RET) housed in small surface-mount plastic package. It offers built-in bias resistors and simplifies circuit design. It is designed for use with control of IC inputs, cost-saving alternative for BC84...
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Single NPN | 50V | -888V | 100mA | 4.7kohm | 4.7kohm | SOT-23 | Surface Mount | 250mW | 150°C | 30hFE | -888 | -888 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUN5211DW1T1G
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SC15948 |
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...
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1+ £0.17 (£0.20) 10+ £0.10 (£0.12) 100+ £0.03 (£0.04) |
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Dual NPN | 50V | - | 100mA | 10kohm | 10kohm | SOT-363 | Surface Mount | 385mW | 150°C | 35hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTD123YT,215
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SC15947 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm NEXPERIA The PDTD123YT is a 2.2 to 10kΩ NPN Resistor Equipped Transistor (RET) in a surface-mount plastic package. • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place costs • ±10% Resistor ratio tolerance • PNP c...
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1+ £0.23 (£0.28) 10+ £0.06 (£0.07) 100+ £0.03 (£0.04) |
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Single NPN | 50V | -888V | 500mA | 2.2kohm | 10kohm | SOT-23 | Surface Mount | 250mW | 150°C | 70hFE | -888 | PDTD123Y Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC143ZT,215
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SC15944 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm NEXPERIA The PDTC143ZT is a 4.7 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP comple...
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Single NPN | 50V | -888V | 100mA | 4.7kohm | 47kohm | SOT-23 | Surface Mount | 250mW | 150°C | 100hFE | -888 | PDTC143Z Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC114ET,215
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SC15942 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm NEXPERIA The PDTC114ET,215 is a NPN Resistor-equipped Transistor family in a small surface mounted device plastic package with 3 leads, built-in bias resistors, simplifies circuit design and reduces component count. • 100mA Output current capability • Reduces pick ...
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Single NPN | 50V | -888V | 100mA | 10kohm | 10kohm | SOT-23 | Surface Mount | 250mW | 150°C | 30hFE | -888 | PDTC114E Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2215LT1G
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SC19268 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10Kohm ONSEMI • Simplifies circuit design • Reduces board space • Reduces component count • 50V Collector-base voltage • 50V Collector-emitter voltage • 100mA Continuous collector current
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Single NPN | 50V | - | 100mA | - | - | SOT-23 | - | 400mW | 150°C | 160hFE | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2214LT1G
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SC10964 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm ONSEMI The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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Single NPN | 50V | -888V | 100mA | 10kohm | 47kohm | SOT-23 | Surface Mount | 400mW | 150°C | 80hFE | -888 | -888 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC114YT,215
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SC15941 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 47 kohm NEXPERIA The PDTC114YT is a 10 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP complem...
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Single NPN | 50V | -888V | 100mA | 10kohm | 47kohm | SOT-23 | Surface Mount | 250mW | 150°C | 100hFE | -888 | PDTC114Y Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||