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MOSFET Transistors - 600V or >

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRFP27N60KPBF
IRFP27N60KPBF - Power MOSFET, N Channel, 600V, 27A, 0.22 ohm, TO-247AC

SC15838

Power MOSFET, N Channel, 600V, 27A, 0.22 ohm, TO-247AC

VISHAY

The IRFP27N60KPBF is a 600V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...

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N Channel 600V 27A 0.22ohm TO-247AC Through Hole 10V 5V 500W 3Pins 150°C - -
STP11NM60FD
STP11NM60FD - N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

SC16952

N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

STMICROELECTRONICS

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...

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N Channel 600V 11A 0.4ohm TO-220AB Through Hole 10V 4V 160W 3Pins 150°C FDmesh -
IRFPC50
IRFPC50 - Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

SC06289

Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 180W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 600V 11A 0.6ohm TO-247AC Through Hole 10V 2V 180W 3Pins 150°C - -
STP10NK60Z
STP10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

SC08225

Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...

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N Channel 600V 10A 0.75ohm TO-220 Through Hole 10V 3.75V 115W 3Pins 150°C - -
FQP12N60C
FQP12N60C - Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

SC11098

Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

ONSEMI

The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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N Channel 600V 12A 0.53ohm TO-220 Through Hole 10V 4V 225W 3Pins 150°C - -
STP3NK60ZFP
STP3NK60ZFP - Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole

SC09919

Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 2.4A • Drain Source On State Resistance : 3.3ohm • Transistor Case Style : TO-220FP • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 20W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 600V 2.4A 3.3ohm TO-220FP Through Hole 10V 3.75V 20W 3Pins 150°C - -
STW10NK60Z
STW10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

SC06449

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...

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N Channel 600V 10A 0.65ohm TO-247 Through Hole 10V 3.75V 156W 3Pins 150°C - -
FQPF5N60C
FQPF5N60C - Power MOSFET, N Channel, 600 V, 4.5 A, 2.5 ohm, TO-220F, Through Hole

SC16973

Power MOSFET, N Channel, 600 V, 4.5 A, 2.5 ohm, TO-220F, Through Hole

ONSEMI

The FQPF5N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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N Channel 600V 4.5A 2.5ohm TO-220F Through Hole 10V 4V 33W 3Pins 150°C - -
STP6NK60ZFP
STP6NK60ZFP - Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole

SC16906

Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 600V 6A 1.2ohm TO-220FP Through Hole 10V 3.75V 32W 3Pins 150°C - -
STP4NK60ZFP
STP4NK60ZFP - Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

SC16986

Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 600V 4A 2ohm TO-220FP Through Hole 10V 3.75V 25W 3Pins 150°C - -
IPW60R017C7XKSA1
IPW60R017C7XKSA1 - Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

SC17026

Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

INFINEON

600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...

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N Channel 600V 109A 0.015ohm TO-247 Through Hole 10V 3.5V 446W 3Pins 150°C CoolMOS C7 -
STP10NK60ZFP
STP10NK60ZFP - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

SC17005

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...

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N Channel 600V 10A 0.65ohm TO-220FP Through Hole 10V 3.75V 35W 3Pins 150°C - -
IRFBC40APBF
IRFBC40APBF - Power MOSFET, N Channel, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Through Hole

SC16969

Power MOSFET, N Channel, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Through Hole

VISHAY

The IRFBC40APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications. • Low gate charge Qg results in simple drive requirement • Impro...

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N Channel 600V 6.2A 1.2ohm TO-220AB Through Hole 10V 4V 125W 3Pins 150°C - -
BSS126H6327XTSA2
BSS126H6327XTSA2 - Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount

SC16946

Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount

INFINEON

The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...

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N Channel 600V 21mA 280ohm SOT-23 Surface Mount 10V 2V 500mW 3Pins 150°C - AEC-Q101