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Operational Amplifier, 1MHz, 0.8V/us, +/- 2V to +/- 18V, +/- 5V to +/- 15V, SOIC, 8 Pins - 

OPA2277UA/2K5

OPA2277UA/2K5 - Operational Amplifier, 1MHz, 0.8V/us, +/- 2V to +/- 18V, +/- 5V to +/- 15V, SOIC, 8 Pins

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
OPA2277UA/2K5
Order Code:
SC16213
Product Range
-

Product Overview

The OPA2277UA/2K5 is a High Precision Operational Amplifier replaces the industry standard OP-177. It offers improved noise, wider output voltage swing and are twice as fast with half the quiescent current. Features include ultralow offset voltage and drift, low bias current, high common-mode rejection and high power supply rejection. Single, dual and quad versions have identical specifications, for maximum design flexibility. Operational amplifier operates from ±2 to ±18V supplies with excellent performance. Unlike most operational amplifiers which are specified at only one supply voltage, the OPAx277 series is specified for real-world applications, a single limit applies over the ±5 to ±15V supply range. High performance is maintained as the amplifiers swing to their specified limits. Because the initial offset voltage (±20µV maximum) is so low, user adjustment is usually not required. However, the single version (OPA277) provides external trim pins for special applications.
  • 10µV Ultralow offset voltage
  • ±0.1µV/°C Ultralow drift
  • 134dB High open-loop gain
  • 140dB High common-mode rejection
  • 130dB High power supply rejection
  • 1nA Maximum low bias current
  • 800µA Low quiescent current per amplifier
  • Green product and no Sb/Br

Applications

Power Management, Signal Processing, Audio, Test & Measurement

Footnotes

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Warnings

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Product Information


:
1MHz

:
0.8V/µs

:
± 2V to ± 18V, ± 5V to ± 15V

:
SOIC

:
8Pins

:
Precision

:
-40°C

:
85°C

:
-

:
-

:
-

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Technical Documents (1)

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