Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Zener Voltage Nom Power Dissipation Diode Case Style No. of Pins Operating Temperature Max Diode Mounting Product Range Qualification
 
 
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1N5338BG
1N5338BG - Zener Single Diode, 5.1 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07166

Zener Single Diode, 5.1 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5338BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and lead is readily solderable. The voltage regulator has tight limits and better...

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5.1V 5W 017AA 2Pins 200°C Through Hole 1N53 Series -
BZX79-C5V1.
BZX79-C5V1. - Zener Single Diode, 5.1 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05696

Zener Single Diode, 5.1 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Zener Voltage Nom : 5.1V • Power Dissipation : 500mW • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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5.1V 500mW DO-35 2Pins 200°C - BZX79 -
BTA10-600CRG
BTA10-600CRG - Triac, 10A, 600V, TO220AB

SC07582

Triac, 10A, 600V, TO220AB

STMICROELECTRONICS

The BTA10-600CRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance

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- - - 3Pins 125°C - - -
ZTX705
ZTX705 - Darlington Transistor, E-Line

SC06840

Darlington Transistor, E-Line

DIODES INC.

The ZTX705 is a -120V E-Line Silicon PNP Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much hi...

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- - - 3Pins 200°C - - -
BAT48
BAT48 - Small Signal Schottky Diode, Single, 40 V, 350 mA, 400 mV, 7.5 A, 125 °C

SC07328

Small Signal Schottky Diode, Single, 40 V, 350 mA, 400 mV, 7.5 A, 125 °C

STMICROELECTRONICS

The BAT48 is a small signal Schottky Diode features low leakage current losses, negligible switching losses, very low turn-on voltage and extremely fast switching. Suitable for general purposes. • Low forward and reverse recovery times • Low capacitance • ...

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- - DO-35 2Pins 125°C Through Hole BAT48 Series -
2N6508G
2N6508G - Thyristor, 25A, 600V, TO220

SC07555

Thyristor, 25A, 600V, TO220

ONSEMI

The 2N6508G is a 3-pin Silicon Controlled Rectifier is designed primarily for half-wave AC control applications. Glass passivated junctions with centre gate fire for greater parameter uniformity and stability. Blocking voltage to 800V. • Small, rugged, the...

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- - - 3Pins 125°C - - -
MJE3055T
MJE3055T - Transistor, NPN, TO220

SC06752

Transistor, NPN, TO220

MULTICOMP PRO

The MJE3055T is a 60V Silicon NPN Complementary Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 20 minimum at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at Ic...

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- 75W - 3Pins 150°C - - -
GBU606
GBU606 - Bridge Rectifier, Glass Passivated, Single Phase, 800 V, 6 A, SIP, 4 Pins, 1 V

SC09287

Bridge Rectifier, Glass Passivated, Single Phase, 800 V, 6 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU606 is a single-phase glass passivated Bridge Rectifier with matte tin-plated lead terminals and UL94V-0 GBU case. The bridge rectifier features high case dielectric strength of 1500V, high surge current capability and polarity as marked on the body...

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- - - 4Pins 150°C - GBU60x Series -
BD136
BD136 - Transistor, PNP, TO126

SC09318

Transistor, PNP, TO126

STMICROELECTRONICS

The BD136 is a PNP complementary epitaxial planar Low Voltage Transistor mounted in the plastic package. It is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Pre-selected in DC current gain

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- 1.25W - 3Pins 150°C - - -
MJL1302AG
MJL1302AG - Transistor, PNP, TO264

SC06828

Transistor, PNP, TO264

ONSEMI

The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...

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- 200W - 3Pins 150°C - - -
STP30NF10
STP30NF10 - Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole

SC08226

Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP30NF10 is a 100V N-channel Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignm...

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- 115W - 3Pins 175°C - - -
STP60NF06
STP60NF06 - Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole

SC08254

Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...

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- 110W - 3Pins 175°C - - -
MJ11015G
MJ11015G - Darlington Transistor, TO3

SC09920

Darlington Transistor, TO3

ONSEMI

The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...

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- - - 2Pins 200°C - - -
IRFI830GPBF
IRFI830GPBF - Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole

SC11142

Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole

VISHAY

The IRFI830GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The mouldin...

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- 32W - 3Pins 150°C - - -
BZV55-C33
BZV55-C33 - Zener Single Diode, 33 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11231

Zener Single Diode, 33 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...

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33V 500mW SOD-80C 2Pins 200°C Surface Mount BZV55 -
STP3NK60ZFP
STP3NK60ZFP - Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole

SC09919

Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

• Power Dissipation : 20W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 20W - 3Pins 150°C - - -
BC856B
BC856B - Transistor, PNP SOT23

SC06599

Transistor, PNP SOT23

NXP

• Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 250mW - 3Pins 150°C - - -
MMBF170
MMBF170 - Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

SC06989

Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switch...

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- 300mW - 3Pins 150°C - - -
RFP70N06
RFP70N06 - Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole

SC08223

Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole

ONSEMI

The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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- 150W - 3Pins 175°C - - -
P0102DA 1AA3
P0102DA 1AA3 - Thyristor, 0.8A, 400V, TO92

SC09960

Thyristor, 0.8A, 400V, TO92

STMICROELECTRONICS

The P0102DA 1AA3 is a standard sensitive Silicon Controlled Rectifier (SCR) with highly sensitive triggering level. It is suitable for all applications where available gate current is limited, such as ground fault circuit interrupters, pilot circuits in so...

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- - - 3Pins 125°C - - -
BC847C
BC847C - Transistor, NPN, SOT23

SC06615

Transistor, NPN, SOT23

NXP

• Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 250mW - 3Pins 150°C - - -
IRF2804PBF
IRF2804PBF - Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole

SC08252

Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole

INFINEON

The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...

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- 330W - 3Pins 175°C - - -
MBR1060G
MBR1060G - Schottky Rectifier, 60 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

SC07391

Schottky Rectifier, 60 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

ONSEMI

The MBR1060G is a SWITCHMODE™ Schottky Barrier Power Rectifier with moulded epoxy case. • All external surfaces corrosion-resistant • Guard-ring for stress protection • Low forward voltage • Low power loss/high efficiency • High surge capacity • Low stored...

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- - TO-220AC 2Pins 175°C Through Hole - -
1N5344BG
1N5344BG - Zener Single Diode, 8.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07172

Zener Single Diode, 8.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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8.2V 5W 017AA 2Pins 200°C Through Hole 1N53 Series -
ZVN4106F
ZVN4106F - Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount

SC07002

Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammability rating

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- 330mW - 3Pins 150°C - - -