Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Zener Voltage Nom | Power Dissipation | Diode Case Style | No. of Pins | Operating Temperature Max | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5338BG
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SC07166 |
Zener Single Diode, 5.1 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5338BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and lead is readily solderable. The voltage regulator has tight limits and better...
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5.1V | 5W | 017AA | 2Pins | 200°C | Through Hole | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX79-C5V1.
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SC05696 |
Zener Single Diode, 5.1 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Zener Voltage Nom : 5.1V • Power Dissipation : 500mW • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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5.1V | 500mW | DO-35 | 2Pins | 200°C | - | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA10-600CRG
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SC07582 |
Triac, 10A, 600V, TO220AB STMICROELECTRONICS The BTA10-600CRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance
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1+ £1.01 (£1.21) 10+ £0.84 (£1.01) 100+ £0.72 (£0.86) |
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- | - | - | 3Pins | 125°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZTX705
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SC06840 |
Darlington Transistor, E-Line DIODES INC. The ZTX705 is a -120V E-Line Silicon PNP Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much hi...
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5+ £0.59 (£0.71) 25+ £0.50 (£0.60) 100+ £0.45 (£0.54) |
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- | - | - | 3Pins | 200°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT48
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SC07328 |
Small Signal Schottky Diode, Single, 40 V, 350 mA, 400 mV, 7.5 A, 125 °C STMICROELECTRONICS The BAT48 is a small signal Schottky Diode features low leakage current losses, negligible switching losses, very low turn-on voltage and extremely fast switching. Suitable for general purposes. • Low forward and reverse recovery times • Low capacitance • ...
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- | - | DO-35 | 2Pins | 125°C | Through Hole | BAT48 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6508G
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SC07555 |
Thyristor, 25A, 600V, TO220 ONSEMI The 2N6508G is a 3-pin Silicon Controlled Rectifier is designed primarily for half-wave AC control applications. Glass passivated junctions with centre gate fire for greater parameter uniformity and stability. Blocking voltage to 800V. • Small, rugged, the...
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1+ £1.87 (£2.24) 10+ £1.71 (£2.05) 100+ £1.51 (£1.81) |
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- | - | - | 3Pins | 125°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE3055T
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SC06752 |
Transistor, NPN, TO220 MULTICOMP PRO The MJE3055T is a 60V Silicon NPN Complementary Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 20 minimum at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at Ic...
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1+ £0.54 (£0.65) 10+ £0.50 (£0.60) 100+ £0.42 (£0.50) |
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- | 75W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU606
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SC09287 |
Bridge Rectifier, Glass Passivated, Single Phase, 800 V, 6 A, SIP, 4 Pins, 1 V TAIWAN SEMICONDUCTOR The GBU606 is a single-phase glass passivated Bridge Rectifier with matte tin-plated lead terminals and UL94V-0 GBU case. The bridge rectifier features high case dielectric strength of 1500V, high surge current capability and polarity as marked on the body...
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1+ £0.52 (£0.62) 10+ £0.47 (£0.56) 100+ £0.42 (£0.50) |
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- | - | - | 4Pins | 150°C | - | GBU60x Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD136
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SC09318 |
Transistor, PNP, TO126 STMICROELECTRONICS The BD136 is a PNP complementary epitaxial planar Low Voltage Transistor mounted in the plastic package. It is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Pre-selected in DC current gain
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- | 1.25W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJL1302AG
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SC06828 |
Transistor, PNP, TO264 ONSEMI The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...
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1+ £3.52 (£4.22) 10+ £3.02 (£3.62) 100+ £2.64 (£3.17) |
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- | 200W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP30NF10
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SC08226 |
Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole STMICROELECTRONICS The STP30NF10 is a 100V N-channel Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignm...
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1+ £0.83 (£1.00) 25+ £0.70 (£0.84) |
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- | 115W | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP60NF06
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SC08254 |
Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole STMICROELECTRONICS The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...
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1+ £0.91 (£1.09) 25+ £0.64 (£0.77) 100+ £0.48 (£0.58) |
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- | 110W | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11015G
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SC09920 |
Darlington Transistor, TO3 ONSEMI The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...
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1+ £6.42 (£7.70) 10+ £5.97 (£7.16) 100+ £5.91 (£7.09) |
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- | - | - | 2Pins | 200°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFI830GPBF
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SC11142 |
Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole VISHAY The IRFI830GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The mouldin...
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1+ £1.23 (£1.48) 25+ £1.09 (£1.31) |
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- | 32W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C33
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SC11231 |
Zener Single Diode, 33 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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33V | 500mW | SOD-80C | 2Pins | 200°C | Surface Mount | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP3NK60ZFP
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SC09919 |
Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole STMICROELECTRONICS • Power Dissipation : 20W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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1+ £0.60 (£0.72) 25+ £0.53 (£0.64) 100+ £0.48 (£0.58) |
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- | 20W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B
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SC06599 |
Transistor, PNP SOT23 NXP • Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 250mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBF170
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SC06989 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switch...
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- | 300mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP70N06
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SC08223 |
Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole ONSEMI The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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- | 150W | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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P0102DA 1AA3
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SC09960 |
Thyristor, 0.8A, 400V, TO92 STMICROELECTRONICS The P0102DA 1AA3 is a standard sensitive Silicon Controlled Rectifier (SCR) with highly sensitive triggering level. It is suitable for all applications where available gate current is limited, such as ground fault circuit interrupters, pilot circuits in so...
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- | - | - | 3Pins | 125°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C
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SC06615 |
Transistor, NPN, SOT23 NXP • Power Dissipation : 250mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 250mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2804PBF
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SC08252 |
Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole INFINEON The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...
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1+ £2.11 (£2.53) 25+ £1.79 (£2.15) |
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- | 330W | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR1060G
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SC07391 |
Schottky Rectifier, 60 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV ONSEMI The MBR1060G is a SWITCHMODE™ Schottky Barrier Power Rectifier with moulded epoxy case. • All external surfaces corrosion-resistant • Guard-ring for stress protection • Low forward voltage • Low power loss/high efficiency • High surge capacity • Low stored...
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- | - | TO-220AC | 2Pins | 175°C | Through Hole | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5344BG
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SC07172 |
Zener Single Diode, 8.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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8.2V | 5W | 017AA | 2Pins | 200°C | Through Hole | 1N53 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4106F
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SC07002 |
Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount DIODES INC. The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammability rating
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- | 330mW | - | 3Pins | 150°C | - | - | - |