Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2907A
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SC06705 |
Transistor, PNP, TO18 MULTICOMP PRO Silicon planar PNP switching transistor for DC to VHF amplifier, switching and linear applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to...
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PNP | 60V | 600mA | 1.8W | TO-18 | Through Hole | 3Pins | 200MHz | 100hFE | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA41-700BRG
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SC07596 |
Triac, 40A, 700V, TOP-3 STMICROELECTRONICS • 800V and 600V, 40A standard Triac in TOP3 isolated package suitable for general purpose AC switching • High current triac • Low thermal resistance • UL1557 recognized • UL-94, V0 flammability package resin compliance
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- | - | - | - | - | - | 3Pins | - | - | 125°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5359BG
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SC07186 |
Zener Single Diode, 24 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5359BG is a Surmetic™ 40 Zener Voltage Regulator Diode with void-free transfer-moulded thermosetting plastic case, all external surfaces are corrosion-resistant and leads are readily solderable finish, cathode indicated by polarity band, tight limits...
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- | - | - | 5W | - | - | 2Pins | - | - | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5360BG
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SC07187 |
Zener Single Diode, 25 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5360BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with void-free transfer-moulded thermosetting plastic case, all external surfaces are corrosion-resistant and leads are readily solderable finish and cathode indicated by polarity band. Th...
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- | - | - | 5W | - | - | 2Pins | - | - | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD139
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SC09455 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Products are pre-selected in DC current gain • Collecto...
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NPN | 80V | 1.5A | 12.5W | SOT-32 | Through Hole | 3Pins | - | 40hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT2222A,215
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SC10956 |
Transistor, NPN, SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 600mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 300MHz • DC Current Gain hFE Min : 40hFE • Operating Temperature Max : 150°C
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NPN | 40V | 600mA | 250mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 40hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU014PBF
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SC11070 |
Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole VISHAY The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissi...
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- | - | - | 30W | TO-251AA | Through Hole | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK60Z
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SC06449 |
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...
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1+ £1.49 (£1.79) 25+ £1.11 (£1.33) 100+ £1.01 (£1.21) |
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- | - | - | 156W | TO-247 | Through Hole | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-GBPC3506A
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SC07525 |
Bridge Rectifier, Single Phase, 600 V, 35 A, Module, 4 Pins, 1.1 V VISHAY The VS-GBPC3506A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...
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- | - | - | - | - | - | 4Pins | - | - | 150°C | VS-GBPC Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT43
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SC07325 |
Small Signal Schottky Diode, Single, 30 V, 200 mA, 1 V, 4 A, 125 °C STMICROELECTRONICS The BAT43 is a general purpose, metal to silicon small signal Schottky Diode featuring very low turn-on voltage fast switching. This device have integrated protection against excessive voltage such as electrostatic discharge. • 200mW Power dissipation • 30...
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- | - | - | - | - | - | 2Pins | - | - | 125°C | BAT43 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MURS160T3G
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SC07378 |
Fast / Ultrafast Diode, 600 V, 1 A, Single, 1.25 V, 75 ns, 35 A ONSEMI MURS160T3G is a power rectifier with ultra-fast recovery. Ideally suited for high voltage, high-frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. • Sma...
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- | - | - | - | - | - | - | - | - | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA42
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SC06677 |
Transistor, NPN, TO92 ONSEMI The MPSA42 is a NPN high voltage amplifier in TO-92 package. This device is designed for applications as a video output and other high voltage applications. • Collector to emitter voltage (Vce) of 300V • Collector to emitter saturation voltage of 500mV at ...
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NPN | 300V | 500mA | 625mW | - | Through Hole | 3Pins | 50MHz | 25hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV67B
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SC06869 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...
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NPN | - | - | - | - | Through Hole | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5377BG
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SC07202 |
Zener Single Diode, 91 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5377BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...
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- | - | - | 5W | - | - | 2Pins | - | - | 200°C | 1N53 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C15
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SC11217 |
Zener Single Diode, 15 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series from NXP are surface mount low power voltage regulator diodes which are hermetically sealed in SOD80C package. The device features non repetitive peak reverse power dissipation ≤ 40 W, total power dissipation≤ 500mW and low differential re...
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- | - | - | 500mW | - | - | 2Pins | - | - | 200°C | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830PBF
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SC11101 |
Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...
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- | - | - | 74W | TO-220AB | Through Hole | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC08528 |
Transistor, PNP, TO126 MULTICOMP PRO The MJE350 is a -300V PNP Plastic Medium Power Transistor designed for use line-operated applications such as low power, line operated series pass and switching regulator requiring PNP capability. • Collector-base voltage(Vcbo = 300V) • Emitter-base voltag...
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PNP | 300V | 500mA | 20W | - | Through Hole | 3Pins | - | 30hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ21194G
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SC06817 |
Transistor, NPN, TO3 ONSEMI The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hig...
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NPN | 250V | 16A | 250W | TO-3 | Through Hole | 2Pins | 4MHz | 8hFE | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C56
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SC11233 |
Zener Single Diode, 56 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | 500mW | - | - | 2Pins | - | - | 200°C | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP127
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SC06864 |
Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins STMICROELECTRONICS The TIP127 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...
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PNP | - | - | - | - | Through Hole | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STTH3012W
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SC11401 |
Standard Recovery Diode, 1.2 kV, 30 A, Single, 1.3 V, 57 ns, 210 A STMICROELECTRONICS The STTH3012W is an Ultrafast Recovery Diode with epoxy (UL94V-0) case. The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ide...
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- | - | - | - | - | - | 2Pins | - | - | 175°C | STTH3 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C4V7
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SC11208 |
Zener Single Diode, 4.7 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZV55
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- | - | - | 500mW | - | - | 2Pins | - | - | 200°C | BZV55 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX853.
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SCZTX853 |
NPN 200V 4A 1200mW TO92 Q23 DIODES INC. • Transistor Polarity : NPN • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 4A • Power Dissipation : 1.2W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 130MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 200°C
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NPN | 100V | 4A | 1.2W | E-Line | Through Hole | 3Pins | 130MHz | 100hFE | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP264PBF
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SC11174 |
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole VISHAY The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...
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- | - | - | 280W | TO-247AC | Through Hole | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP30A
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SC06763 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP30A is a PNP high-power Bipolar Transistor offers 0.7V (maximum) collector-emitter saturation voltage at 1A and 3MHz minimum current gain-bandwidth product at 200mA. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are ra...
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PNP | 60V | 1A | 30W | TO-220 | Through Hole | 3Pins | 3MHz | 40hFE | 150°C | - | - |