Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Zener Voltage Nom Power Dissipation Diode Case Style No. of Pins Operating Temperature Max Diode Mounting Product Range Qualification
 
 
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1N5333BG
1N5333BG - Zener Single Diode, 3.3 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07161

Zener Single Diode, 3.3 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333BG is a Surmetic™ 40 Zener Voltage Regulator Diode with void-free transfer-moulded thermosetting plastic case, all external surfaces are corrosion-resistant and leads are readily solderable finish, cathode indicated by polarity band, tight limits...

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3.3V 5W 017AA 2Pins 200°C Through Hole 1N53 Series -
1N5386BG
1N5386BG - Zener Single Diode, 180 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07208

Zener Single Diode, 180 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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180V 5W 017AA 2Pins 200°C Through Hole 1N53 Series -
BZX79-C3V3.
BZX79-C3V3. - Zener Single Diode, 3.3 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05691

Zener Single Diode, 3.3 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Zener Voltage Nom : 3.3V • Power Dissipation : 500mW • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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3.3V 500mW DO-35 2Pins 200°C - BZX79 -
MUR420RLG
MUR420RLG - Fast / Ultrafast Diode, 200 V, 4 A, Single, 890 mV, 35 ns, 125 A

SC07380

Fast / Ultrafast Diode, 200 V, 4 A, Single, 890 mV, 35 ns, 125 A

ONSEMI

The MUR420RLG is a SWITCHMODE™ ultra-fast axial-lead Power Rectifier with moulded epoxy case. This state-of-the-art device is designed for use in switching power supplies, inverters and as free-wheeling diodes. • Cathode indicated by polarity band • All ex...

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- - DO-201AD - 175°C - - -
IRFR9110PBF
IRFR9110PBF - Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

SC11203

Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave sol...

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- 25W - 3Pins 150°C - - -
2N5195G
2N5195G - Transistor, PNP, TO126

SC06743

Transistor, PNP, TO126

ONSEMI

The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192

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- 40W - 3Pins 150°C - - -
GSIB1580-E3/45
GSIB1580-E3/45 - Bridge Rectifier, Single Phase, 800 V, 15 A, SIP, 4 Pins, 950 mV

SC11489

Bridge Rectifier, Single Phase, 800 V, 15 A, SIP, 4 Pins, 950 mV

VISHAY

The GSIB1580-E3/45 is a 4-pin single-phase in-line Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for home appliances and office equipment applications. • UL94V-0 Flammability r...

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- - - 4Pins 150°C - - -
1N6263
1N6263 - Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C

SC11331

Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C

STMICROELECTRONICS

High performance devices for UHF/VHF applications, detecting, mixing, switching etc. Low turn-off voltage, as low as 0.34V @ 1mA. Pico-second switching speed. High breakdown voltage, up to 70V.

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- - DO-204AH 2Pins 200°C Through Hole - -
SR304
SR304 - Small Signal Schottky Diode, Single, 40 V, 3 A, 550 mV, 80 A, 125 °C

SC07445

Small Signal Schottky Diode, Single, 40 V, 3 A, 550 mV, 80 A, 125 °C

TAIWAN SEMICONDUCTOR

The SR304 is a Schottky Barrier Rectifier with moulded compound case and matte tin-plated lead terminals. It features high reliability, low power loss and high surge current reliability. • Low forward voltage drop • High current capability • High efficienc...

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- - DO-201AD 2Pins 125°C Through Hole SR3xx Series -
ZTX553
ZTX553 - Transistor, PNP, E-Line

SC10973

Transistor, PNP, E-Line

DIODES INC.

The ZTX553 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -120V collector-base voltage. • -55 to 200°C Operating temperature range

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- 1W - 3Pins 200°C - - -
BTA40-600B
BTA40-600B - Triac, 40A, 600V, RD-91

SC07592

Triac, 40A, 600V, RD-91

STMICROELECTRONICS

The BTA40-600B is a TRIAC for phase control operations in light dimmers, motor speed controllers. • Low Thermal Resistance with Clip Bonding • High Commutation Capability

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- - - 3Pins 125°C - - -
MJ15023G
MJ15023G - Transistor, PNP, TO3

SC06786

Transistor, PNP, TO3

ONSEMI

The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...

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- 250W - 2Pins 200°C - - -
ZTX614
ZTX614 - Darlington Transistor, E-Line

SC06839

Darlington Transistor, E-Line

DIODES INC.

The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range

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- - - 3Pins 200°C - - -
BDX33C
BDX33C - Darlington Transistor, TO220

SC06854

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current

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- - - 3Pins 150°C - - -
GSIB1560-E3/45
GSIB1560-E3/45 - Bridge Rectifier, Single Phase, 600 V, 15 A, SIP, 4 Pins, 950 mV

SC11485

Bridge Rectifier, Single Phase, 600 V, 15 A, SIP, 4 Pins, 950 mV

VISHAY

The GSIB1560-E3/45 is a single-phase single in-line Bridge Rectifier with matte tin-plated leads terminals and UL94V-0 flame rated moulding compound case. The bridge rectifier features glass passivated chip junction, high surge current capability and high ...

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- - - 4Pins 150°C - - -
1N5355BG
1N5355BG - Zener Single Diode, 18 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07182

Zener Single Diode, 18 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5355BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...

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18V 5W 017AA 2Pins 200°C Through Hole 1N53 Series -
S1A-E3/61T
S1A-E3/61T - Standard Recovery Diode, 50 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A

SC11344

Standard Recovery Diode, 50 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A

VISHAY

The S1A-E3/5AT is a surface-mount Glass-passivated Rectifier with matte tin-plated solderable leads. It is suitable for use in general-purpose rectification of power supplies, inverters, converters and freewheeling diodes. • Ideal for automated placement •...

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- - DO-214AC (SMA) 2Pins 150°C - - -
TIP41C
TIP41C - Si-N 100V 6A 2W

SC06513

Si-N 100V 6A 2W

STMICROELECTRONICS

The TIP41C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • Complement to TIP42C • High Switching Speed • hFE Improved Linearity • hFE Grouping

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- 65W - 3Pins 150°C - - -
VS-GBPC3510A
VS-GBPC3510A - Bridge Rectifier, Single Phase, 1 kV, 35 A, Module, 4 Pins, 1.1 V

SC07526

Bridge Rectifier, Single Phase, 1 kV, 35 A, Module, 4 Pins, 1.1 V

VISHAY

The VS-GBPC3510A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...

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- - - 4Pins 150°C - VS-GBPC Series -
2N4920G
2N4920G - Transistor, PNP, TO126

SC06742

Transistor, PNP, TO126

ONSEMI

The 2N4920G is a -80V Silicon PNP Bipolar Plastic Medium Power Transistor designed for driver circuits, switching and amplifier applications. • Excellent safe operating area • Low saturation voltage • Excellent power dissipation due to thermo pad construct...

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- 30W - 3Pins 150°C - 2NXXXX -
GBU8J.
GBU8J. - Bridge Rectifier, Single Phase, 600 V, 8 A, 4 Pins, 1 V

SC05550

Bridge Rectifier, Single Phase, 600 V, 8 A, 4 Pins, 1 V

ONSEMI

• No. of Pins : 4Pins • Operating Temperature Max : 150°C • Product Range : GBU8J

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- - - 4Pins 150°C - GBU8J -
STTH212U
STTH212U - Fast / Ultrafast Diode, 1.2 kV, 2 A, Single, 1.75 V, 75 ns, 40 A

SC11394

Fast / Ultrafast Diode, 1.2 kV, 2 A, Single, 1.75 V, 75 ns, 40 A

STMICROELECTRONICS

The STTH212U is a high voltage Ultrafast Diode features low forward voltage drop, high surge current capability and soft switching for reduced EMI disturbances. It uses ST ultrafast high voltage planar technology. This diode will reduce the losses in high ...

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- - DO-214AA (SMB) - 175°C - STTH2 -
VS-2KBB20
VS-2KBB20 - Bridge Rectifier, Single Phase, 200 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

SC11464

Bridge Rectifier, Single Phase, 200 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

VISHAY

The VS-2KBB20 is a 4-pin single-phase Bridge Rectifier Diode assembly consisting of four silicon diodes in a plastic encapsulation, intended for general applications. • Suitable for printed circuit board mounting • Leads on standard 2.54mm grid • Compact c...

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- - - 4Pins 150°C - VS-2KBB Series -
BD912
BD912 - Transistor, PNP, TO220

SC06759

Transistor, PNP, TO220

STMICROELECTRONICS

The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications. • 5A Base current

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- 90W - 3Pins 150°C - - -
MJ11016G
MJ11016G - Darlington Transistor, TO3

SC06896

Darlington Transistor, TO3

ONSEMI

The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. • High ...

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- - - 2Pins 200°C - - -