Bipolar Transistors

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Transistor Polarity Collector Emitter Voltage V(br)ceo DC Collector Current Power Dissipation Pd
 
 
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BC109B
BC109B - Transistor, NPN, TO18

SC06718

Transistor, NPN, TO18

MULTICOMP PRO

The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • Collector-base voltage(Vcbo = 30V) • Emitter-base v...

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NPN 25V 200mA 600mW
MJ11032
MJ11032 - Darlington Transistor, TO3

SC06897

Darlington Transistor, TO3

MULTICOMP PRO

The MJ11032 is a 120V Silicon NPN Complementary Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. • High DC current gain • High gain Darlington performance • Multicomp Pro products are r...

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NPN 120V 50A 300W
TIP42A
TIP42A - Transistor, PNP, TO220

SC06766

Transistor, PNP, TO220

MULTICOMP PRO

The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warr...

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PNP -60V -6A 65W
BUX80
BUX80 - Transistor, NPN, TO3

SC06803

Transistor, NPN, TO3

MULTICOMP PRO

The BUX80 is a 400V NPN High Voltage Power Transistor designed for use in high voltage and high speed power switching in inductive circuit, motor control, solenoid and relay drivers. • Collector-emitter sustaining voltage (Vceo (sus) = 4000V minimum) • Mul...

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NPN 400V - -
BC177B
BC177B - Transistor, PNP, TO18

SC06648

Transistor, PNP, TO18

MULTICOMP PRO

The BC177B is a low power silicon planar epitaxial Bipolar Transistor with TO-18 metal can package. • 50V Collector-base voltage • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of...

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PNP 45V 200mA 600mW
BC857C
BC857C - Transistor, PNP, SOT23

SC06616

Transistor, PNP, SOT23

NXP

Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; DC Current Gain hFE:420hFE; MSL:MSL 1 - Unlimited; No. of Pins:3Pins; Operating Temperature Max:150°C; Power Dissipation Pd:250

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PNP 45V 100mA 250mW
BC849B
BC849B - Transistor, NPN SOT23

SC06619

Transistor, NPN SOT23

ON SEMICONDUCTOR

Automotive Qualification Standard:-; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; DC Current Gain hFE:200hFE; MSL:-; No. of Pins:3Pins; Operating Temperature Max:150°C; Powe

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NPN 30V 100mA 300mW
FMMT617
FMMT617 - Transistor, NPN, SOT23

SC06628

Transistor, NPN, SOT23

DIODES INC.

The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...

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NPN 15V 3A 625mW
FZT753
FZT753 - Transistor, PNP, SOT223

SC10981

Transistor, PNP, SOT223

DIODES INC.

The FZT753 is a -100V PNP Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • UL94V-0 Flammability rating • Low saturation voltage • Complementary NPN type FZT653 • AEC-Q101 q...

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PNP 100V -2A 2W
BCW30
BCW30 - Transistor, PNP SOT23

SC06605

Transistor, PNP SOT23

NXP

The BCW30 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW31 and BCW32 • C2 Marking code

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PNP 32V 100mA 250mW
BCW71
BCW71 - Transistor, NPN SOT23

SC06592

Transistor, NPN SOT23

NXP

The BCW71 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K1 Marking code

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NPN 45V 100mA 250mW
BCW32
BCW32 - Transistor, NPN, SOT23

SC10949

Transistor, NPN, SOT23

NXP

The BCW32 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D2 Marking code

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NPN 32V 100mA 250mW
BCW60B
BCW60B - Transistor, NPN SOT23

SC06591

Transistor, NPN SOT23

NXP

The BCW60B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • AB marking code

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NPN 32V 100mA 250mW
BCX71H
BCX71H - Transistor, PNP SOT23

SC06608

Transistor, PNP SOT23

NXP

The BCX71H is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use in low level, low noise, low frequency applications in hybrid circuits, general purpose switching and amplification. • Low current • Low voltage • Low noise ...

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PNP 45V 100mA 250mW
2N2369A
2N2369A - Transistor, NPN, TO18

SC06700

Transistor, NPN, TO18

UNBRANDED

Collector Emitter Voltage V(br)ceo:15V; No. of Pins:3Pins; Power Dissipation Pd:360mW; Transistor Polarity:NPN; Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic

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NPN 15V - 360mW
MMUN2214LT1G
MMUN2214LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

SC10964

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

ON SEMICONDUCTOR

The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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- 50V - -
BCW72
BCW72 - Transistor, NPN SOT23

SC06593

Transistor, NPN SOT23

NXP

The BCW72 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K2 Marking code

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NPN 45V 100mA 250mW
SMBT2222A
SMBT2222A - Transistor, NPN, SOT23

SC10624

Transistor, NPN, SOT23

INFINEON

Automotive Qualification Standard:AEC-Q101; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:600mA; DC Current Gain hFE:100hFE; MSL:-; No. of Pins:3Pins; Operating Temperature Max:150

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NPN 40V 600mA 330mW
2SC3855
2SC3855 - Si-N 200V 10A 100W 20MHz TO3PB

SC08527

Si-N 200V 10A 100W 20MHz TO3PB

ALLEGRO SANKEN

Collector Emitter Voltage V(br)ceo:140V; No. of Pins:3Pins; Power Dissipation Pd:100W; Transistor Polarity:NPN; Av Current Ic:10A; Continuous Collector Current Ic Max:10A; Current Ib:4A; C

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NPN 140V - 100W
BD956
BD956 - Transistor, PNP, TO220

SC06760

Transistor, PNP, TO220

TT ELECTRONICS / SEMELAB

The BD956 is a PNP silicon epitaxial base Power Transistor intended for use in a wide range of power amplifiers and for switching applications. • NPN complement BD955

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PNP 120V 2A 40W
BUV48A
BUV48A - Transistor, NPN, TO247

SC06801

Transistor, NPN, TO247

MOSPEC

Collector Emitter Voltage V(br)ceo:450V; No. of Pins:3Pins; Power Dissipation Pd:150W; Transistor Polarity:NPN; Av Current Ic:15A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Coll

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NPN 450V - 150W