N Channel Transistors
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N Channel Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTZD3154NT1G
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SC16697 |
SMD Dual MOSFET N Channel Transistor, SOT-563, 20V, 540mA ONSEMI The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications. • Low RDS (ON) improving s...
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N Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBF170LT1G
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SC16703 |
SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 500mA | 5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDS331N
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SC16701 |
SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A ONSEMI The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PC...
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N Channel | 20V | 1.3A | 0.11ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV130ENEAR
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SC16922 |
SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23 NEXPERIA The PMV130ENEAR from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable applications: Relay driver, High-speed line driv...
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N Channel | 40V | 2.1A | 0.095ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFN200N10P
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SC17024 |
MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V IXYS SEMICONDUCTOR The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier ...
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N Channel | 100V | 200A | 0.0075ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7103TRPBF
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SC16693 |
SMD Dual N Channel MOSFET Transistor, SOIC, 50V, 3A INFINEON The IRF7103TRPBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of ...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18543Q3AT
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SC16685 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 35A TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 35A • Drain Source On State Resistance : 0.0081ohm
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N Channel | 60V | 35A | 0.0081ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19534Q5AT
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SC16686 |
SMD Power MOSFET N Channel NexFET Transistor, 100V, 50A TEXAS INSTRUMENTS The CSD19534Q5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications. • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Halogen-free...
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N Channel | 100V | 50A | 0.0126ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV301N
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SC16698 |
SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA ONSEMI The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge...
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N Channel | 25V | 220mA | 4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMC2400UV-7
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SC16695 |
SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A DIODES INC. DMC2400UV-7 is a complementary pair enhancement mode MOSFET in 6 pin SOT-563 package. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effic...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STE53NC50
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SC17022 |
MOSFET Transistor, N Channel, 53 A, 500 V, 0.08 ohm, 10 V, 3 V STMICROELECTRONICS The STE53NC50 is a 500V N-channel PowerMesh™II MOSFET with extremely high dv/dt capability. The layout refinements introduced greatly improve the area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate char...
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N Channel | 500V | 53A | 0.08ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18540Q5BT
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SC16687 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 100A TEXAS INSTRUMENTS The CSD18540Q5BT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and isolated converter primary side switch applications. ...
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N Channel | 60V | 100A | 0.0018ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4559
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SC16692 |
SMD Dual MOSFET PowerTrench Complementary N and P Channel Transistor, 60V, 4.5A ONSEMI The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backligh...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD17308Q3
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SC16684 |
SMD Power MOSFET N Channel NexFET Transistor, 30V, 47A TEXAS INSTRUMENTS The CSD17308Q3 is a 30V N-channel NexFET™ Power MOSFET with low thermal resistance and optimized for 5V gate drive. It is been designed to minimize losses in power conversion and optimized for control or synchronous FET applications. Suitable for point of ...
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N Channel | 30V | 47A | 0.0094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS8858CZ
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SC16689 |
SMD Dual MOSFET N and P Channel Transistor, PowerTrench, SOIC, 30V, 8.6A ONSEMI The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2318AES-T1_GE3
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SC16702 |
SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A VISHAY • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100% Rg and UIS Tested
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N Channel | 40V | 8A | 0.125ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC6333C..
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SC16694 |
SMD Complementary N and P Channel Dual MOSFET Transistor, SuperSOT, 30V, 2.5A ONSEMI The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation ...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD8424H
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SC16682 |
SMD Dual N & P Channel Mosfet Transistor, TO-252, 40V, 9A ONSEMI The FDD8424H is a 40V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized p...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN80N50
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SC17017 |
MOSFET Transistor, N Channel, 80A, 10V, IXYS SEMICONDUCTOR The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...
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N Channel | 500V | 80A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN180N15P
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SC17025 |
MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V IXYS SEMICONDUCTOR The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge a...
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N Channel | 150V | 150A | 0.011ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18504Q5A
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SC16683 |
SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A, TEXAS INSTRUMENTS The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...
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N Channel | 40V | 50A | 0.0053ohm |