Single Bipolar Junction Transistors - BJT
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Single Bipolar Junction Transistors - BJT
Introducing the Single Bipolar Junction Transistors - BJT, your go-to solution for all your electronic needs. With a wide range of options available, CPC offers industry-leading brands to ensure top-notch quality and reliability. Say goodbye to searching high and low for the perfect component, because we have everything you need right here. Whether you're a seasoned professional or a hobbyist, our Single Bipolar Junction Transistors - BJT will exceed your expectations. Order yours today and experience the best price guaranteed. Don't settle for anything less than excellence £� choose CPC for all your Single Bipolar Junction Transistors - BJT needs.
| Bipolar Junction Transistor Arrays - BJT | Pre-Biased / Digital Bipolar Transistors | Bipolar RF Transistors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA42LT1G
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SC16052 |
Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 225mW, SOT-23, SMD ONSEMI The MMBTA42LT1G is a 300V NPN silicon high voltage Bipolar Transistor designed for general purpose amplifier applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 30...
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NPN | - | 300V | 500mA | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 50MHz | 50hFE | 50hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906LT1G
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SC16069 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is -40VDC • Collector-base voltage is -40VDC • Collector current - continuous is -200mA DC • Total device dissipation is a 225mW • Junction and ...
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PNP | 40V | 40V | 200mA | 200mA | 225mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 300hFE | 300hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA56LT1G
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SC16075 |
Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23 ONSEMI The MMBTA56LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery...
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PNP | 80V | 80V | 500mA | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 50MHz | 50hFE | 50hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT4401LT1G
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SC16030 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 60VDC Collect...
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NPN | - | 40V | 600mA | 600mA | 225mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 250hFE | 250hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5401LT1G
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SC16070 |
Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23 ONSEMI The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...
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PNP | 150V | 150V | 500mA | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 100hFE | 100hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904LT1G
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SC15980 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...
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NPN | - | 40V | 200mA | 200mA | 225mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 300hFE | 300hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA92LT1G
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SC16079 |
Bipolar (BJT) Single Transistor, PNP, -300V, -500mA, 300mW, SOT-23 ONSEMI The MMBTA92LT1G is a PNP high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in a package which is designed for low power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 300V | 300V | 500mA | 500mA | 300mW | SOT-23 | Surface Mount | 3Pins | 50MHz | 50hFE | 50hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5087LT1G
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SC16088 |
Bipolar (BJT) Single Transistor, PNP, -50V, -50mA, 225mW, SOT-23, SMD ONSEMI The MMBT5087LT1G is a PNP Bipolar Transistor designed for high gain and low noise general purpose amplifier applications. The device is housed in the package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher effic...
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PNP | 50V | 50V | 50mA | 50mA | 225mW | SOT-23 | Surface Mount | 3Pins | 40MHz | 40hFE | 40hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904WT1G
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SC16072 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD ONSEMI The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery life • A...
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NPN | - | 40V | 200mA | 200mA | 150mW | SOT-323 | Surface Mount | 3Pins | 300MHz | 300hFE | 300hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5551LT1G
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SC16063 |
Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified. • Halogen-free
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NPN | - | 160V | 600mA | 600mA | 225mW | SOT-23 | Surface Mount | 3Pins | - | 80hFE | 80hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2907ALT1G
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SC16036 |
Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 225mW, SOT-23 ONSEMI The MMBT2907ALT1G is a -60V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -60VDC Collector to base voltage (VCBO) • -5VDC E...
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PNP | 60V | 60V | 600mA | 600mA | 300mW | SOT-23 | Surface Mount | 3Pins | 200MHz | 200hFE | 200hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA06LT1G
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SC16037 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 225mW, SOT-23, SMD ONSEMI MMBTA06LT1G is a driver transistor. • Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C) • Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C • Collector current - continuous is 500mAdc • Electrostatic discha...
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NPN | - | 80V | 500mA | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 100hFE | 150°C | MMBTxxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222ALT1G
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SC16021 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT2222ALT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications. • Halogen-free/BFR-free • AEC-Q101 Qualified and PPAP Capable
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NPN | - | 40V | 600mA | 600mA | 225mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 35hFE | 300hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||