Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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FQP19N20
FQP19N20 - Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

SC08208

Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

ONSEMI

The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...

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N Channel 200V 19.4A 0.12ohm
MJ15015G
MJ15015G - Transistor, NPN, TO3

SC06780

Transistor, NPN, TO3

ONSEMI

The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverte...

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IRFU9014PBF
IRFU9014PBF - Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

SC11069

Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling

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P Channel 60V 5.6A 0.5ohm
BDX53C
BDX53C - Darlington Transistor, TO220

SC10998

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and ...

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ZVN4310A
ZVN4310A - Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

SC06969

Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.

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N Channel 100V 900mA 0.65ohm
IRFD120PBF
IRFD120PBF - Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

SC07021

Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

VISHAY

The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...

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N Channel 100V 1.3A 0.27ohm
FQA170N06.
FQA170N06. - Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

SC06320

Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170A • Drain Source On State Resistance : 0.0056ohm

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N Channel 60V 170A 0.0056ohm
TIP31A
TIP31A - Transistor, NPN, TO220

SC06755

Transistor, NPN, TO220

STMICROELECTRONICS

The TIP31A is a 60V NPN Power Transistor manufactured in base island technology with better performance. The transistor is suitable for audio, power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduce...

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2N4033MC
2N4033MC - Transistor, PNP TO39

SC06641

Transistor, PNP TO39

MULTICOMP PRO

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STW20NM50FD
STW20NM50FD - Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

SC11175

Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...

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N Channel 500V 20A 0.25ohm
IRFP23N50LPBF
IRFP23N50LPBF - Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

SC11180

Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

VISHAY

The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...

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N Channel 500V 23A 0.235ohm
BC848CLT1G
BC848CLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

SC14981

Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

ONSEMI

The BC848CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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CSD19537Q3T
CSD19537Q3T - SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

SC16995

SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

TEXAS INSTRUMENTS

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0121ohm

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N Channel 100V 50A 0.0121ohm
2N7002BK,215
2N7002BK,215 - Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

SC15984

Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...

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N Channel 60V 350mA 1ohm
FDN5630
FDN5630 - Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

SC16780

Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...

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N Channel 60V 1.7A 0.1ohm
BS107P
BS107P - N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

SC16884

N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

DIODES INC.

• Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0

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N Channel 200V 120mA 30ohm
2N1711
2N1711 - Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

SC15750

Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

MULTICOMP PRO

Silicon planar epitaxial NPN transistor for use in high performance amplifier, oscillator and switching circuits. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers woul...

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BSS806NH6327XTSA1
BSS806NH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

SC16851

Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

INFINEON

The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free

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N Channel 20V 2.3A 0.041ohm
BC846BDW1T1G
BC846BDW1T1G - Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

SC16123

Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

ONSEMI

The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free

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SI2356DS-T1-GE3
SI2356DS-T1-GE3 - Power MOSFET, N Channel, 40V, 4.3A, 0.042 Ohm, SOT-23, SMD

SC16787

Power MOSFET, N Channel, 40V, 4.3A, 0.042 Ohm, SOT-23, SMD

VISHAY

The SI2356DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for DC / DC converter, load switches, LED backlighting and power management applications. • TrenchFET® Power MOSFET • 100% Rg Tested

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N Channel 40V 4.3A 0.042ohm
ZXMP6A17E6TA
ZXMP6A17E6TA - Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

SC16832

Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...

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P Channel 60V 3A 0.125ohm
SI2301CDS-T1-E3
SI2301CDS-T1-E3 - Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount

SC16887

Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount

VISHAY

Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...

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P Channel 20V 3.1A 0.11ohm
SI7850DP-T1-E3
SI7850DP-T1-E3 - Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

SC16843

Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

VISHAY

The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...

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N Channel 60V 10.3A 0.022ohm
FDP2532
FDP2532 - N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB

SC16972

N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB

ONSEMI

• Low miller charge • Low Qrr body diode • UIS Capability (single pulse and repetitive pulse)

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N Channel 150V 79A 0.014ohm
BC557BTA
BC557BTA - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

SC15789

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

ONSEMI

The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547

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